Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-Current
Raj, Aditya, Krishna, Athith, Hatui, Nirupam, Gupta, Chirag, Jang, Raina, Keller, Stacia, Mishra, Umesh K.
Published in IEEE electron device letters (01.02.2020)
Published in IEEE electron device letters (01.02.2020)
Get full text
Journal Article
GaN/AlGaN superlattice based E-mode hole channel FinFET with Schottky gate
Raj, Aditya, Krishna, Athith, Romanczyk, Brian, Hatui, Nirupam, Liu, Wenjian, Keller, Stacia, Mishra, Umesh K.
Published in IEEE electron device letters (01.01.2023)
Published in IEEE electron device letters (01.01.2023)
Get full text
Journal Article
N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density
Romanczyk, Brian, Li, Weiyi, Guidry, Matthew, Hatui, Nirupam, Krishna, Athith, Wurm, Christian, Keller, Stacia, Mishra, Umesh K.
Published in IEEE electron device letters (01.11.2020)
Published in IEEE electron device letters (01.11.2020)
Get full text
Journal Article
W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs
Romanczyk, Brian, Zheng, Xun, Guidry, Matthew, Li, Haoran, Hatui, Nirupam, Wurm, Christian, Krishna, Athith, Ahmadi, Elaheh, Keller, Stacia, Mishra, Umesh K.
Published in IEEE electron device letters (01.03.2020)
Published in IEEE electron device letters (01.03.2020)
Get full text
Journal Article
AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment
Krishna, Athith, Raj, Aditya, Hatui, Nirupam, Koksaldi, Onur, Jang, Raina, Keller, Stacia, Mishra, Umesh K.
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
Get full text
Journal Article
High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz
Shrestha, Pawana, Guidry, Matthew, Romanczyk, Brian, Hatui, Nirupam, Wurm, Christian, Krishna, Athith, Pasayat, Shubhra S., Karnaty, Rohit R., Keller, Stacia, Buckwalter, James F., Mishra, Umesh K.
Published in IEEE electron device letters (01.05.2020)
Published in IEEE electron device letters (01.05.2020)
Get full text
Journal Article
Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films
Hatui, Nirupam, Krishna, Athith, Pasayat, Shubhra S., Keller, Stacia, Mishra, Umesh K.
Published in Electronics (Basel) (15.05.2021)
Published in Electronics (Basel) (15.05.2021)
Get full text
Journal Article
Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors
Athith Krishna, Raj, Aditya, Hatui, Nirupam, Keller, Stacia, Mishra, Umesh
Published in arXiv.org (14.10.2019)
Published in arXiv.org (14.10.2019)
Get full text
Paper
Journal Article
AlGaN /GaN superlattice based p-channel field effect transistor (pFET) with TMAH treatment
Athith Krishna, Raj, Aditya, Hatui, Nirupam, Koksaldi, Onur, Jang, Raina, Keller, Stacia, Mishra, Umesh
Published in arXiv.org (25.08.2019)
Published in arXiv.org (25.08.2019)
Get full text
Paper
Journal Article
HfO 2 as gate insulator on N-polar GaN-AlGaN heterostructures
Clymore, Christopher J., Mohanty, Subhajit, Jian, Zhe (Ashley), Krishna, Athith, Keller, Stacia, Ahmadi, Elaheh
Published in Semiconductor science and technology (01.02.2021)
Published in Semiconductor science and technology (01.02.2021)
Get full text
Journal Article
Strong Confinment of optical fields using localised surface phonon polaritons in cubic Boron Nitride
Chatzakis, Ioannis, Athith Krishna, Culbertson, James, Sharac, Nicholas, Giles, Alexander J, Spencer, Michael G, a nd Joshua D Caldwell
Published in arXiv.org (28.12.2018)
Published in arXiv.org (28.12.2018)
Get full text
Paper
Journal Article
HfO2 as gate insulator on N-polar GaN-AlGaN heterostructures
Clymore, Christopher J, Mohanty, Subhajit, Jian, Zhe (Ashley), Krishna, Athith, Keller, Stacia, Ahmadi, Elaheh
Published in Semiconductor science and technology (01.03.2021)
Published in Semiconductor science and technology (01.03.2021)
Get full text
Journal Article
Strong confinement of optical fields using localized surface phonon polaritons in cubic boron nitride
Chatzakis, Ioannis, Krishna, Athith, Culbertson, James, Sharac, Nicholas, Giles, Alexander J, Spencer, Michael G, Caldwell, Joshua D
Published in Optics letters (01.05.2018)
Published in Optics letters (01.05.2018)
Get more information
Journal Article
A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT
Shrestha, Pawana, Guidry, Matthew, Romanczyk, Brian, Karnaty, Rohit R., Hatui, Nirupam, Wurm, Christian, Krishna, Athith, Pasayat, Shubhra S., Keller, Stacia, Buckwalter, James F., Mishra, Umesh K.
Published in 2020 Device Research Conference (DRC) (01.06.2020)
Published in 2020 Device Research Conference (DRC) (01.06.2020)
Get full text
Conference Proceeding