The promise of GaAs 200 in small‐angle neutron scattering for higher resolution
Magerl, A., Lemmel, H., Appel, M., Weisser, M., Kretzer, U., Zobel, M.
Published in Journal of applied crystallography (01.10.2024)
Published in Journal of applied crystallography (01.10.2024)
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Journal Article
LEC- and VGF-growth of SI GaAs single crystals—recent developments and current issues
Jurisch, M., Börner, F., Bünger, Th, Eichler, St, Flade, T., Kretzer, U., Köhler, A., Stenzenberger, J., Weinert, B.
Published in Journal of crystal growth (15.02.2005)
Published in Journal of crystal growth (15.02.2005)
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Journal Article
Conference Proceeding
Influence of boron on the point defect equilibrium in highly n-doped gallium arsenide single crystals
Kretzer, U., Börner, F., Bünger, T., Eichler, S.
Published in Physica. B, Condensed matter (15.12.2007)
Published in Physica. B, Condensed matter (15.12.2007)
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Journal Article
Photoelastic characterization of residual stress in GaAs-wafers
Geiler, H.D., Karge, H., Wagner, M., Eichler, St, Jurisch, M., Kretzer, U., Scheffer-Czygan, M.
Published in Materials science in semiconductor processing (01.02.2006)
Published in Materials science in semiconductor processing (01.02.2006)
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Journal Article
Conference Proceeding
A combined carbon and oxygen segregation model for the LEC growth of SI GaAs
Eichler, S., Seidl, A., Börner, F., Kretzer, U., Weinert, B.
Published in Journal of crystal growth (2003)
Published in Journal of crystal growth (2003)
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Journal Article
Far-infrared spectroscopy of shallow acceptors in semi-insulating GaAs: evidence for defect interactions with EL2
Alt, H. Ch, Gomeniuk, Y., Kretzer, U.
Published in Physica status solidi. B. Basic research (01.01.2003)
Published in Physica status solidi. B. Basic research (01.01.2003)
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Journal Article
Conference Proceeding
Growth and characterization of 200 mm SI GaAs crystals grown by the VGF method
Stenzenberger, J, Bünger, T, Börner, F, Eichler, S, Flade, T, Hammer, R, Jurisch, M, Kretzer, U, Teichert, S, Weinert, B
Published in Journal of crystal growth (01.03.2003)
Published in Journal of crystal growth (01.03.2003)
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Journal Article
GaAs wafer mapping by microwave-detected photoconductivity
Niklas, J.R., Siegel, W., Jurisch, M., Kretzer, U.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.03.2001)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.03.2001)
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Journal Article
Conference Proceeding
200 mm GaAs crystal growth by the temperature gradient controlled LEC method
Seidl, A., Eichler, S., Flade, T., Jurisch, M., Köhler, A., Kretzer, U., Weinert, B.
Published in Journal of crystal growth (01.05.2001)
Published in Journal of crystal growth (01.05.2001)
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Journal Article
Conference Proceeding
Development of a vertical gradient freeze process for low EPD GaAs substrates
Bünger, Th, Behr, D., Eichler, St, Flade, T., Fliegel, W., Jurisch, M., Kleinwechter, A., Kretzer, U., Steinegger, Th, Weinert, B.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.03.2001)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.03.2001)
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Journal Article
Conference Proceeding
200mm GaAs crystal growth by the temperature gradient controlled LEC method
Seidl, A., Eichler, S., Flade, T., Jurisch, M., Köhler, A., Kretzer, U., Weinert, B.
Published in Journal of crystal growth (01.05.2001)
Published in Journal of crystal growth (01.05.2001)
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Journal Article
State of the art 6″ SI GaAs wafers made of conventionally grown LEC-crystals
Flade, T., Jurisch, M., Kleinwechter, A., Köhler, A., Kretzer, U., Prause, J., Reinhold, Th, Weinert, B.
Published in Journal of crystal growth (01.03.1999)
Published in Journal of crystal growth (01.03.1999)
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Journal Article
Oxygen incorporation in undoped LEC-GaAs
Gärtner, G, Flade, T, Jurisch, M, Köhler, A, Korb, J, Kretzer, U, Weinert, B
Published in Journal of crystal growth (01.03.1999)
Published in Journal of crystal growth (01.03.1999)
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Journal Article
Growth and characterization of 2" and 4" low EPD InP substrate crystals by the vertical gradient freeze (VGF)-method
Schwesig, P., Sahr, U., Friedrich, J., Muller, G., Kohler, A., Kretzer, U., Eichler, S., Muhe, A.
Published in International Conference on Indium Phosphide and Related Materials, 2005 (2005)
Published in International Conference on Indium Phosphide and Related Materials, 2005 (2005)
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Conference Proceeding
Studies of reperfusion injury in skeletal muscle: preserved cellular viability after extended periods of warm ischemia
Beyersdorf, F, Unger, A, Wildhirt, A, Kretzer, U, Deutschländer, N, Krüger, S, Matheis, G, Hanselmann, A, Zimmer, G, Satter, P
Published in Journal of cardiovascular surgery (01.09.1991)
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Published in Journal of cardiovascular surgery (01.09.1991)
Journal Article
Mesoscopic nonuniformity of wafer-annealed semi-insulating InP
Hirt, G., Wolf, D., Hoffmann, B., Kretzer, U., Kühnel, G., Woitech, A., Zemke, D., MÜller, G.
Published in Journal of electronic materials (01.03.1996)
Published in Journal of electronic materials (01.03.1996)
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