InGaAs/AlGaAs QWIP Heterostructures for Large-Format Focal Plane Arrays Photosensitive in the Spectral Range 3-5 m
Dudin, A.L, Katsavets, N.I, Krasovitsky, D.M, Kokin, S.V, Chaly, V.P, Shukov, I.V
Published in Journal of communications technology & electronics (01.03.2018)
Published in Journal of communications technology & electronics (01.03.2018)
Get full text
Journal Article
Deposition of GaN Layers with a lowered dislocation density by molecular-beam epitaxy
Alexeev, A. N., Krasovitsky, D. M., Petrov, S. I., Chaly, V. P.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2012)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2012)
Get full text
Journal Article
Indium droplet formation during molecular beam epitaxy of InGaN
Chaly, V.P, Borisov, B.A, Demidov, D.M, Krasovitsky, D.M, Pogorelsky, Yu.V, Shkurko, A.P, Sokolov, I.A, Karpov, S.Yu
Published in Journal of crystal growth (01.10.1999)
Published in Journal of crystal growth (01.10.1999)
Get full text
Journal Article