Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on AlN/SiC substrates
Alekseev, A. N., Aleksandrov, S. B., Byrnaz, A. É., Kokin, S. V., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, M. Yu, Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Tkachenko, A. G., Chalyĭ, V. P., Shkurko, A. P.
Published in Technical physics letters (01.08.2008)
Published in Technical physics letters (01.08.2008)
Get full text
Journal Article
GaN/InGaN heterostructures grown by ammonia MBE with a wetting metal indium layer
Alekseev, A. N., Byrnaz, A. É., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Chalyĭ, V. P., Shkurko, A. P.
Published in Technical physics letters (01.09.2008)
Published in Technical physics letters (01.09.2008)
Get full text
Journal Article
Microwave field-effect transistors based on group-III nitrides
Aleksandrov, S. B., Baranov, D. A., Kaidash, A. P., Krasovitskii, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skii, Yu. V., Sokolov, I. A., Stepanov, M. V., Chalyi, V. P., Gladysheva, N. B., Dorofeev, A. A., Matveev, Yu. A., Chernyavskii, A. A.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2004)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2004)
Get full text
Journal Article
MBE of InGaN/GaN heterostructures using ammonia as a source of nitrogen
Petrov, S. I., Kaidash, A. P., Krasovitskii, D. M., Sokolov, I. A., Pogorel’skii, Yu. V., Chalyi, V. P., Shkurko, A. P., Stepanov, M. V., Pavlenko, M. V., Baranov, D. A.
Published in Technical physics letters (01.07.2004)
Published in Technical physics letters (01.07.2004)
Get full text
Journal Article
Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on silicon substrates
Alekseev, A. N., Aleksandrov, S. B., Byrnaz, A. É., Velikovskiĭ, L. É., Velikovskiĭ, I. É., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, M. Yu, Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Tkachenko, A. G., Shkurko, A. P., Chalyĭ, V. P.
Published in Technical physics letters (01.04.2008)
Published in Technical physics letters (01.04.2008)
Get full text
Journal Article
Multilayer AIN/AlGaN/GaN/AlGaN heterostructures with quantum wells for high-power field-effect transistors grown by ammonia MBE
Alekseev, A. N., Aleksandrov, S. B., Byrnaz, A. É., Velikovskiĭ, L. É., Velikovskiĭ, I. É., Veretekha, A. V., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, M. Yu, Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Tkachenko, A. G., Shkurko, A. P., Chalyĭ, V. P.
Published in Technical physics letters (01.11.2006)
Published in Technical physics letters (01.11.2006)
Get full text
Journal Article
Electric and photoelectric properties of n-GaxIn1−x N/p-Si anisotypic heterojunctions
Aleksandrov, S. E., Zykov, V. A., Gavrikova, T. A., Krasovitskii, D. M.
Published in Semiconductors (Woodbury, N.Y.) (01.04.1998)
Published in Semiconductors (Woodbury, N.Y.) (01.04.1998)
Get full text
Journal Article
AlGaN/GaN HEMTs grown by ammonia MBE
Volkov, V. V., Ivanova, V. P., Kuz’michev, Yu. S., Lermontov, S. A., Solov’ev, Yu. V., Baranov, D. A., Kaidash, A. P., Krasovitskii, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skii, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Chalyi, V. P.
Published in Technical physics letters (01.05.2004)
Published in Technical physics letters (01.05.2004)
Get full text
Journal Article
MBE-grown nanoheterostructures with increased electron mobility
Alekseev, A. N., Petrov, S. I., Nevolin, V. K., Tsarik, K. A., Krasovitskii, D. M., Chalyi, V. P.
Published in Russian microelectronics (01.12.2012)
Published in Russian microelectronics (01.12.2012)
Get full text
Journal Article