Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers
Andreev, B. A., Lobanov, D. N., Krasil’nikova, L. V., Bushuykin, P. A., Yablonskiy, A. N., Novikov, A. V., Davydov, V. Yu, Yunin, P. A., Kalinnikov, M. I., Skorohodov, E. V., Krasil’nik, Z. F.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2019)
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Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates
Yablonsky, A. N., Morozov, S. V., Gaponova, D. M., Aleshkin, V. Ya, Shengurov, V. G., Zvonkov, B. N., Vikhrova, O. V., Baidus’, N. V., Krasil’nik, Z. F.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2016)
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Microscopic structure of Er-related optically active centers in crystalline silicon
Vinh, N Q, Przybylińska, H, Krasil'nik, Z F, Gregorkiewicz, T
Published in Physical review letters (14.02.2003)
Published in Physical review letters (14.02.2003)
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Microscopic and optical investigation of Ge nanoislands on silicon substrates
Krasil'nik, Z F, Lytvyn, P, Lobanov, D N, Mestres, N, Novikov, A V, Pascual, J, Valakh, M Ya, Yukhymchuk, V A
Published in Nanotechnology (01.02.2002)
Published in Nanotechnology (01.02.2002)
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Spectral selection of excitonic transitions in a dense array of CdSe/ZnSe quantum dots
Shubina, T. V., Rodina, A. V., Semina, M. A., Golovatenko, A. A., Toropov, A. A., Rakhlin, M. V., Sedova, I. V., Sorokin, S. V., Gronin, S. V., Sitnikova, A. A., Kuritsyn, D. I., Sergeev, S. M., Krasil'nik, Z. F., Ivanov, S. V.
Published in Physica Status Solidi. B: Basic Solid State Physics (01.08.2016)
Published in Physica Status Solidi. B: Basic Solid State Physics (01.08.2016)
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Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals
Yablonskiy, A. N., Novikov, A. V., Stepikhova, M. V., Sergeev, S. M., Baidakova, N. A., Shaleev, M. V., Krasilnik, Z. F.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2020)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2020)
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Effect of tensile-strained Si layer on photoluminescence of Ge(Si) self-assembled islands grown on relaxed SiGe/Si(001) buffer layers
Shaleev, M. V., Novikov, A. V., Yablonskiĭ, A. N., Kuznetsov, O. A., Drozdov, Yu. N., Krasil’nik, Z. F.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2007)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2007)
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Si/SiGe: Er/Si structures for laser realization: Theoretical analysis and luminescent studies
Stepikhova, M.V., Krasil’nikova, L.V., Krasil’nik, Z.F., Shengurov, V.G., Chalkov, V.Yu, Svetlov, S.P., Zhigunov, D.M., Timoshenko, V.Yu, Kashkarov, P.K.
Published in Journal of crystal growth (02.02.2006)
Published in Journal of crystal growth (02.02.2006)
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Electroluminescence at 1.54 μm in Si:Er/Si structures grown by sublimation molecular-beam epitaxy
Kuznetsov, V. P., Remizov, D. Yu, Shabanov, V. N., Rubtsova, R. A., Stepikhova, M. V., Kryzhov, D. I., Shushunov, A. N., Belova, O. V., Krasil’nik, Z. F., Maksimov, G. A.
Published in Semiconductors (Woodbury, N.Y.) (01.07.2006)
Published in Semiconductors (Woodbury, N.Y.) (01.07.2006)
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Low-energy photoluminescence of structures with GeSi/Si(001) self-assembled nanoislands
Vostokov, N. V., Drozdov, Yu. N., Krasil’nik, Z. F., Lobanov, D. N., Novikov, A. V., Yablonskii, A. N.
Published in JETP letters (25.09.2002)
Published in JETP letters (25.09.2002)
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Population inversion of the energy levels of erbium ions induced by excitation transfer from the semiconductor matrix in Si-Ge based structures
Stepikhova, M. V., Zhigunov, D. M., Shengurov, V. G., Timoshenko, V. Yu, Krasil’nikova, L. V., Chalkov, V. Yu, Svetlov, S. P., Shalygina, O. A., Kashkarov, P. K., Krasil’nik, Z. F.
Published in JETP letters (01.01.2005)
Published in JETP letters (01.01.2005)
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Optical properties of Si/Si:Er multi-nanolayer structures grown by SMBE method
Ngoc Ha, Ngo, Krasil’nik, Z.F., Gregorkiewicz, T.
Published in Physica. B, Condensed matter (15.12.2009)
Published in Physica. B, Condensed matter (15.12.2009)
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Photoluminescence of self-assembled GeSi/Si(001) nanoislands of different shapes
Vostokov, N. V., Krasil’nik, Z. F., Lobanov, D. N., Novikov, A. V., Shaleev, M. V., Yablonskii, A. N.
Published in Physics of the solid state (01.01.2004)
Published in Physics of the solid state (01.01.2004)
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Impurity photoconductivity in SiGe/Si:B multi-quantum-well heterostructures
Aleshkin, V.Ya, Antonov, A.V., Gavrilenko, V.I., Kozlov, D.V., Krasil’nik, Z.F., Lobanov, D.N., Novikov, A.V.
Published in Physica. B, Condensed matter (31.12.2003)
Published in Physica. B, Condensed matter (31.12.2003)
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Experimental determination of the energy distribution function of hot holes in an InGaAs/GaAs quantum well heterostructure
Aleshkin, V Ya, Andronov, A A, Antonov, A V, Gavrilenko, V I, Gaponova, D M, Krasil'nik, Z F, Revin, D G, Zvonkov, N, Uskova, E A
Published in Semiconductor science and technology (01.11.2000)
Published in Semiconductor science and technology (01.11.2000)
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The elastic strain and composition of self-assembled GeSi islands on Si(001)
Krasil'nik, Z.F, Dolgov, I.V, Drozdov, Yu.N, Filatov, D.O, Gusev, S.A, Lobanov, D.N, Moldavskaya, L.D, Novikov, A.V, Postnikov, V.V, Vostokov, N.V
Published in Thin solid films (15.05.2000)
Published in Thin solid films (15.05.2000)
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Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities
Stepikhova, M V, Novikov, A V, Yablonskiy, A N, Shaleev, M V, Utkin, D E, Rutckaia, V V, Skorokhodov, E V, Sergeev, S M, Yurasov, D V, Krasilnik, Z F
Published in Semiconductor science and technology (01.02.2019)
Published in Semiconductor science and technology (01.02.2019)
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Correlation between the energy of SiGe nanoislands and their shape and size
Valakh, M. Ya, Dzhagan, V. N., Krasil’nik, Z. F., Lytvyn, P. M., Lobanov, D. N., Mozdor, E. V., Novikov, A. V., Yukhymchuk, V. A., Yaremko, A. M.
Published in Physics of the solid state (01.01.2004)
Published in Physics of the solid state (01.01.2004)
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