Electrical and noise properties of proton irradiated 4H-SiC Schottky diodes
Kozlovski, V. V., Lebedev, A. A., Levinshtein, M. E., Rumyantsev, S. L., Palmour, J. W.
Published in Journal of applied physics (14.01.2018)
Published in Journal of applied physics (14.01.2018)
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Journal Article
Model for conductivity compensation of moderately doped n- and p-4H-SiC by high-energy electron bombardment
Kozlovski, V. V., Lebedev, A. A., Bogdanova, E. V.
Published in Journal of applied physics (21.04.2015)
Published in Journal of applied physics (21.04.2015)
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Journal Article
Persistent Relaxation Processes in Proton-Irradiated 4H-SiC
Lebedev, A. A., Malevsky, D. A., Kozlovski, V. V., Levinshtein, M. E.
Published in Semiconductors (Woodbury, N.Y.) (2024)
Published in Semiconductors (Woodbury, N.Y.) (2024)
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Journal Article
Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide
Lebedev, Alexander A, Kozlovski, Vitali V, Davydovskaya, Klavdia S, Kuzmin, Roman A, Levinshtein, Mikhail E, Strel'chuk, Anatolii M
Published in Materials (03.12.2022)
Published in Materials (03.12.2022)
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Journal Article
Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature
Lebedev, A. A., Kozlovski, V. V., Levinshtein, M. E., Malevsky, D. A., Oganesyan, G. A., Strel’chuk, A. M., Davydovskaya, K. S.
Published in Semiconductors (Woodbury, N.Y.) (01.03.2022)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2022)
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Journal Article
Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons
Sleptsuk, Natalja, Korolkov, Oleg, Toompuu, Jana, Kozlovski, Vitalii V., Lebedev, Alexander A.
Published in Materials science forum (28.07.2020)
Published in Materials science forum (28.07.2020)
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Journal Article
Radiation-stimulated photoluminescence in electron irradiated 4H-SiC
Lebedev, A A, Ber, B Ya, Seredova, N V, Kazantsev, D Yu, Kozlovski, V V
Published in Journal of physics. D, Applied physics (09.12.2015)
Published in Journal of physics. D, Applied physics (09.12.2015)
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Journal Article
Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons
Korolkov, O. M., Kozlovski, V. V., Lebedev, A. A., Sleptsuk, N., Toompuu, J., Rang, T.
Published in Semiconductors (Woodbury, N.Y.) (01.07.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.07.2019)
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Journal Article
Investigation of the Cr3+ Impurity Luminescence in Proton-Irradiated β-Ga2O3
Davydov, V. Yu, Smirnov, A. N., Eliseyev, I. A., Kitaev, Yu. E., Sharofidinov, S. S., Lebedev, A. A., Panov, D. Yu, Spiridonov, V. A., Bauman, D. A., Romanov, A. E., Kozlovski, V. V.
Published in Semiconductors (Woodbury, N.Y.) (2024)
Published in Semiconductors (Woodbury, N.Y.) (2024)
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Journal Article
Formation of Radiation Defects in Wide-Band Semiconductors Based on Gallium (Ga2O3, GaN) under Proton Irradiation
Kozlovski, V. V., Vasil’ev, A. E., Lebedev, A. A., Zhurkin, E. E., Levinshtein, M. E., Strelchuk, A. M.
Published in Surface investigation, x-ray, synchrotron and neutron techniques (01.12.2023)
Published in Surface investigation, x-ray, synchrotron and neutron techniques (01.12.2023)
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Journal Article
Vtiamin®-Based Water Chemistry for Combined-Cycle Units
Suslov, S. Yu, Kirilina, A. V., Nartya, E. F., Zidikhanova, A. A., Kozlovski, V. V.
Published in Power technology and engineering (2024)
Published in Power technology and engineering (2024)
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Journal Article
Impact of Proton Irradiation on Power 4H-SiC MOSFETs
Fursin, Leonid, Ivanov, Pavel A., Levinshtein, Mikhail E., Kozlovski, Vitalii V., Zubov, Alexander V., Strel'chuk, Anatoly M., Lebedev, Alexander A.
Published in Materials science forum (28.07.2020)
Published in Materials science forum (28.07.2020)
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Journal Article
Effect of the Electron-Irradiation Temperature on the Formation of Radiation Defects in Silicon Carbide
Kozlovski, V. V., Vasil’ev, A. E., Lebedev, A. A., Davydovskaya, K. S., Levinshtein, M. E.
Published in Surface investigation, x-ray, synchrotron and neutron techniques (01.04.2023)
Published in Surface investigation, x-ray, synchrotron and neutron techniques (01.04.2023)
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Journal Article
Change in the Parameters of Electron-Irradiated 4H-SiC Schottky Diodes as a Function of the Time during Low-Temperature Isothermal Annealing
Kozlovski, Vitalii V., Korolkov, Oleg, Toompuu, Jana, Lebedev, Alexander A., Rang, Toomas, Sleptsuk, Natalja
Published in Materials science forum (19.07.2019)
Published in Materials science forum (19.07.2019)
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Journal Article
Formation and annealing of vacancy-P complexes in proton-irradiated germanium
Elsayed, M., Arutyunov, N.Yu, Krause-Rehberg, R., Oganesyan, G.A., Kozlovski, V.V.
Published in Acta materialia (01.11.2015)
Published in Acta materialia (01.11.2015)
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Journal Article
Effect of high energy (15 MeV) proton irradiation on vertical power 4H-SiC MOSFETs
Lebedev, A A, Kozlovski, V V, Levinshtein, M E, Ivanov, P A, Strel'chuk, A M, Zubov, A V, Fursin, Leonid
Published in Semiconductor science and technology (01.04.2019)
Published in Semiconductor science and technology (01.04.2019)
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Journal Article