High-power quantum-dot-based semiconductor disk laser
Butkus, M, Wilcox, K G, Rautiainen, J, Okhotnikov, O G, Mikhrin, S S, Krestnikov, I L, Kovsh, A R, Hoffmann, M, Südmeyer, T, Keller, U, Rafailov, E U
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Published in Optics letters (01.06.2009)
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High speed nanophotonic devices based on quantum dots
Bimberg, D., Fiol, G., Kuntz, M., Meuer, C., Lämmlin, M., Ledentsov, N. N., Kovsh, A. R.
Published in Physica status solidi. A, Applications and materials science (01.11.2006)
Published in Physica status solidi. A, Applications and materials science (01.11.2006)
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Modelocked quantum dot vertical external cavity surface emitting laser
Hoffmann, M., Barbarin, Y., Maas, D. J. H. C., Golling, M., Krestnikov, I. L., Mikhrin, S. S., Kovsh, A. R., Südmeyer, T., Keller, U.
Published in Applied physics. B, Lasers and optics (01.12.2008)
Published in Applied physics. B, Lasers and optics (01.12.2008)
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High performance narrow stripe quantum-dot lasers with etched waveguide
Ouyang, D, Ledentsov, N N, Bimberg, D, Kovsh, A R, Zhukov, A E, Mikhrin, S S, Ustinov, V M
Published in Semiconductor science and technology (01.12.2003)
Published in Semiconductor science and technology (01.12.2003)
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InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 mu m
Lott, J A, Ledentsov, N N, Ustinov, V M, Maleev, N A, Zhukov, A E, Kovsh, A R, Maximov, M V, Volovik, B V, Alferov, Zh I, Bimberg, D
Published in Electronics letters (03.08.2000)
Published in Electronics letters (03.08.2000)
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InAs/InGaAs/GaAs quantum dot lasers of 1.3 mu m range with high (88%) differential efficiency
Kovsh, A R, Maleev, N A, Zhukov, A E, Mikhrin, S S, Vasil'ev, A P, Shernyakov, Yu M, Maximov, M V, Livshits, D A, Ustinov, V M, Alferov, Zh I, Ledentsov, N N, Bimberg, D
Published in Electronics letters (12.09.2002)
Published in Electronics letters (12.09.2002)
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Quantum dot lasers: breakthrough in optoelectronics
Bimberg, D., Grundmann, M., Heinrichsdorff, F., Ledentsov, N.N., Ustinov, V.M., Zhukov, A.E., Kovsh, A.R., Maximov, M.V., Shernyakov, Y.M., Volovik, B.V., Tsatsul’nikov, A.F., Kop’ev, P.S., Alferov, Zh.I.
Published in Thin solid films (15.05.2000)
Published in Thin solid films (15.05.2000)
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Metamorphic growth for application in long-wavelength (1.3–1.55 µm) lasers and MODFET-type structures on GaAs substrates
Semenova, E S, Zhukov, A E, Mikhrin, S S, Egorov, A Yu, Odnoblyudov, V A, Vasil’ev, A P, Nikitina, E V, Kovsh, A R, Kryzhanovskaya, N V, Gladyshev, A G, Blokhin, S A, Musikhin, Yu G, Maximov, M V, Shernyakov, Yu M, Ustinov, V M, Ledentsov, N N
Published in Nanotechnology (01.04.2004)
Published in Nanotechnology (01.04.2004)
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Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation
Maximov, M.V., Asryan, L.V., Shernyakov, Yu.M., Tsatsul'nikov, A.F., Kaiander, I.N., Nikolaev, V.V., Kovsh, A.R., Mikhrin, S.S., Ustinov, V.M., Zhukov, A.E., Alferov, Z.I., Ledenstou, N.N., Bimberg, D.
Published in IEEE journal of quantum electronics (01.05.2001)
Published in IEEE journal of quantum electronics (01.05.2001)
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Gain characteristics of quantum dot injection lasers
Zhukov, A E, Kovsh, A R, Ustinov, V M, Egorov, A Yu, Ledentsov, N N, Tsatsul'nikov, A F, Maximov, M V, Shernyakov, Yu M, Kopchatov, V I, Lunev, A V, Kop'ev, P S, Bimberg, D, Alferov, Zh I
Published in Semiconductor science and technology (01.01.1999)
Published in Semiconductor science and technology (01.01.1999)
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Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate
Zhukov, A.E., Kovsh, A.R., Ustinov, V.M., Shernyakov, Yu.M., Mikhrin, S.S., Maleev, N.A., Kondrat'eva, E.Yu, Livshits, D.A., Maximov, M.V., Volovik, B.V., Bedarev, D.A., Musikhin, Yu.G., Ledentsov, N.N., Kop'ev, P.S., Alferov, Z.I., Bimberg, D.
Published in IEEE photonics technology letters (01.11.1999)
Published in IEEE photonics technology letters (01.11.1999)
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The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots
Blokhin, S A, Sakharov, A V, Maleev, N A, Kulagina, M M, Shernyakov, Yu M, Novikov, I I, Gordeev, N Yu, Maximov, M V, Kuzmenkov, A G, Ustinov, V M, Ledentsov, N N, Kovsh, A R, Mikhrin, S S, Lin, G, Chi, J Y
Published in Semiconductor science and technology (01.03.2007)
Published in Semiconductor science and technology (01.03.2007)
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Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs
Yang, H-P D, Lu, C, Hsiao, R, Chiou, C, Lee, C, Huang, C, Yu, H, Wang, C, Lin, K, Maleev, N A, Kovsh, A R, Sung, C, Lai, C, Wang, J, Chen, J, Lee, T, Chi, J Y
Published in Semiconductor science and technology (01.08.2005)
Published in Semiconductor science and technology (01.08.2005)
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Formation of InAs quantum dots on a silicon (100) surface
Cirlin, G E, Dubrovskii, V G, Petrov, V N, Polyakov, N K, Korneeva, N P, Demidov, V N, Golubok, A O, Masalov, S A, Kurochkin, D V, Gorbenko, O M, Komyak, N I, Ustinov, V M, Egorov, A Yu, Kovsh, A R, Maximov, M V, Tsatsul'nikov, A F, Volovik, B V, Zhukov, A E, Kop'ev, P S, Alferov, Zh I, Ledentsov, N N, Grundmann, M, Bimberg, D
Published in Semiconductor science and technology (01.11.1998)
Published in Semiconductor science and technology (01.11.1998)
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Thermodynamic analysis of the MBE growth of GaInAsN
Odnoblyudov, V A, Egorov, A Yu, Kovsh, A R, Zhukov, A E, Maleev, N A, Semenova, E S, Ustinov, V M
Published in Semiconductor science and technology (01.10.2001)
Published in Semiconductor science and technology (01.10.2001)
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High bit rate and elevated temperature data transmission using InGaAs quantum-dot lasers
Tan, K.T., Marinelli, C., Thompson, M.G., Wonfor, A., Silver, M., Sellin, R.L., Penty, R.V., White, I.H., Kuntz, M., Lammlin, M., Ledentsov, N.N., Bimberg, D., Zhukov, A.E., Ustinov, V.M., Kovsh, A.R.
Published in IEEE photonics technology letters (01.05.2004)
Published in IEEE photonics technology letters (01.05.2004)
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Structural and optical properties of Ga(As,N) epilayers grown with continuous and pulsed deposition and nitridization
Soshnikov, I P, Kovsh, A R, Ustinov, V M, Kryzhanovskaya, N V, Ledentsov, N N, Bimberg, D, Kirmse, H, Neumann, W, Gorbenko, O M, Lin, G, Wang, J, Shiao, R S, Chi, J
Published in Semiconductor science and technology (01.03.2004)
Published in Semiconductor science and technology (01.03.2004)
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Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures
Brunkov, P. N., Kovsh, A. R., Ustinov, V. M., Musikhin, Yu. G., Ledentsov, N. N., Konnikov, S. G., Polimeni, A., Patanè, A., Main, P. C., Eaves, L., Kapteyn, C. M. A.
Published in Journal of electronic materials (01.05.1999)
Published in Journal of electronic materials (01.05.1999)
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Distortion-free optical amplification of 20-80 GHz modelocked laser pulses at 1.3 μm using quantum dots
LAEMMLIN, M, FIOL, G, MEUER, C, KUNTZ, M, HOPFER, F, KOVSH, A. R, LEDENTSOV, N. N, BIMBERG, D
Published in Electronics letters (08.06.2006)
Published in Electronics letters (08.06.2006)
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