A Megapixel Matrix Photodetector of the Middle Infrared Range
Bazovkin, V. M., Varavin, V. S., Vasil’ev, V. V., Glukhov, A. V., Gorshkov, D. V., Dvoretsky, S. A., Kovchavtsev, A. P., Makarov, Yu. S., Marin, D. V., Mzhelsky, I. V., Polovinkin, V. G., Remesnik, V. G., Sabinina, I. V., Sidorov, Yu. G., Sidorov, G. Yu, Stroganov, A. S., Tsarenko, A. V., Yakushev, M. V., Latyshev, A. V.
Published in Journal of communications technology & electronics (01.09.2019)
Published in Journal of communications technology & electronics (01.09.2019)
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The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In0.53Ga0.47As Interface
Aksenov, M. S., Valisheva, N. A., Kovchavtsev, A. P.
Published in Technical physics letters (01.06.2021)
Published in Technical physics letters (01.06.2021)
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HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector
Marchishin, I. V., Sabinina, I. V., Sidorov, G. Yu, Yakushev, M. V., Varavin, V. S., Remesnik, V. G., Predein, A. V., Dvoretsky, S. A., Vasil’ev, V. V., Sidorov, Yu. G., Marin, D. V., Kovchavtsev, A. P., Latyshev, A. V.
Published in Journal of communications technology & electronics (01.03.2020)
Published in Journal of communications technology & electronics (01.03.2020)
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MBE-grown InSb photodetector arrays
Bakarov, A. K., Gutakovskii, A. K., Zhuravlev, K. S., Kovchavtsev, A. P., Toropov, A. I., Burlakov, I. D., Boltar’, K. O., Vlasov, P. V., Lopukhin, A. A.
Published in Technical physics (01.06.2017)
Published in Technical physics (01.06.2017)
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HgCdTe p+-n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors
Bazovkin, V. M., Dvoretskiy, S. A., Guzev, A. A., Kovchavtsev, A. P., Marin, D. V., Panova, Z. V., Sabinina, I. V., Sidorov, Yu. G., Sidorov, G. Yu, Tsarenko, A. V., Varavin, V. S., Vasiliev, V. V., Yakushev, M. V.
Published in Physica status solidi. C (01.07.2016)
Published in Physica status solidi. C (01.07.2016)
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CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures
Varavin, V. S., Vasilyev, V. V., Guzev, A. A., Dvoretsky, S. A., Kovchavtsev, A. P., Marin, D. V., Sabinina, I. V., Sidorov, Yu. G., Sidorov, G. Yu, Tsarenko, A. V., Yakushev, M. V.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2016)
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Barrier characteristics and interface properties of Au/Ti/n-InAlAs Schottky contacts
Chistokhin, I.B., Aksenov, M.S., Valisheva, N.A., Dmitriev, D.V., Kovchavtsev, A.P., Gutakovskii, A.K., Prosvirin, I.P., Zhuravlev, K.S.
Published in Materials science in semiconductor processing (01.02.2018)
Published in Materials science in semiconductor processing (01.02.2018)
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Electronic properties of InAs-based metal-insulator-semiconductor (MIS) structures
Kuryshev, G. L., Kovchavtsev, A. P., Valisheva, N. A.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2001)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2001)
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Advanced Design of Scanning Infrared Focal Plane Arrays
Dvoretskii, S. A., Kovchavtsev, A. P., Lee, I. I., Polovinkin, V. G., Sidorov, G. Yu, Yakushev, M. V.
Published in Optoelectronics, instrumentation, and data processing (01.11.2018)
Published in Optoelectronics, instrumentation, and data processing (01.11.2018)
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High operating temperature SWIR p+–n FPA based on MBE-grown HgCdTe/Si(013)
Bazovkin, V.M., Dvoretsky, S.A., Guzev, A.A., Kovchavtsev, A.P., Marin, D.V., Polovinkin, V.G., Sabinina, I.V., Sidorov, G.Yu, Tsarenko, A.V., Vasil’ev, V.V., Varavin, V.S., Yakushev, M.V.
Published in Infrared physics & technology (01.05.2016)
Published in Infrared physics & technology (01.05.2016)
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Journal Article
HgCdTe-Based 640 x 512 Matrix Midwave Infrared Photodetector
Marchishin, I. V, Sabinina, I. V, Sidorov, G. Yu, Yakushev, M. V, Varavin, V. S, Remesnik, V. G, Predein, A. V
Published in Journal of communications technology & electronics (01.03.2020)
Published in Journal of communications technology & electronics (01.03.2020)
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The reverse current temperature dependences of SWIR CdHgTe “p-on-n” and “n-on-p” junctions
Kovchavtsev, A.P., Guzev, A.A., Tsarenko, A.V., Panova, Z.V., Yakushev, M.V., Marin, D.V., Varavin, V.S., Vasilyev, V.V., Dvoretsky, S.A., Sabinina, I.V., Sidorov, Yu.G.
Published in Infrared physics & technology (01.11.2015)
Published in Infrared physics & technology (01.11.2015)
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Journal Article
High operating temperature SWIR p super(+)-n FPA based on MBE-grown HgCdTe/Si(0 1 3)
Bazovkin, V M, Dvoretsky, SA, Guzev, A A, Kovchavtsev, A P, Marin, D V, Polovinkin, V G, Sabinina, I V, Sidorov, GYu, Tsarenko, A V, Vasil'ev, V V, Varavin, V S, Yakushev, M V
Published in Infrared physics & technology (01.05.2016)
Published in Infrared physics & technology (01.05.2016)
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Interaction of geomechanical and physicochemical processes in Kuzbass coal
Oparin, V. N., Kiryaeva, T. A., Gavrilov, V. Yu, Shutilov, R. A., Kovchavtsev, A. P., Tanaino, A. S., Efimov, V. P., Astrakhantsev, I. E., Grenev, I. V.
Published in Journal of mining science (01.03.2014)
Published in Journal of mining science (01.03.2014)
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Journal Article
HgCdTe p super(+)-n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors
Bazovkin, V M, Dvoretskiy, SA, Guzev, A A, Kovchavtsev, A P, Marin, D V, Panova, Z V, Sabinina, I V, Sidorov, YuG, Sidorov, GYu, Tsarenko, A V, Varavin, V S, Vasiliev, V V, Yakushev, M V
Published in Physica status solidi. C (01.07.2016)
Published in Physica status solidi. C (01.07.2016)
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Electrical properties of InAs-SiO2-In2O3 MIS structures with a modified interface
Valisheva, N. A., Guzev, A. A., Kovchavtsev, A. P., Kuryshev, G. L., Levtsova, T. A., Panova, Z. V.
Published in Russian microelectronics (01.03.2009)
Published in Russian microelectronics (01.03.2009)
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