Accumulation of Background Impurities in Hydride Vapor Phase Epitaxy Grown GaN Layers
Usikov, Alexander, Soukhoveev, Vitali, Kovalenkov, Oleg, Syrkin, Alexander, Shapovalov, Liza, Volkova, Anna, Ivantsov, Vladimir
Published in Japanese Journal of Applied Physics (01.08.2013)
Published in Japanese Journal of Applied Physics (01.08.2013)
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Large area GaN and AlN template substrates fabricated by HVPE
Soukhoveev, Vitali, Volkova, Anna, Ivantsov, Vladimir, Kovalenkov, Oleg, Syrkin, Alexander, Usikov, Alexander
Published in Physica status solidi. C (01.06.2009)
Published in Physica status solidi. C (01.06.2009)
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Journal Article
GaN layer growth by HVPE on m-plane sapphire substrates
Usikov, Alexander, Shapovalov, Lisa, Ivantsov, Vladimir, Kovalenkov, Oleg, Syrkin, Alexander, Spiberg, Philippe, Brown, Robert
Published in Physica status solidi. C (01.06.2009)
Published in Physica status solidi. C (01.06.2009)
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Novel HVPE technology to grow nanometer thick GaN, AlN, AlGaN layers and multi-layered structures
Usikov, Alexander, Shapovalova, Lisa, Kovalenkov, Oleg, Sukhoveev, Vitali, Volkova, Anna, Ivantsov, Vladimir, Dmitriev, Vladimir, Meng, Fanyu, Datta, Ranjan, Mahajan, Subhash, Readinger, Eric, Garrett, Gregory, Wraback, Michael, Reshchikov, Michael
Published in Physica status solidi. C (01.06.2007)
Published in Physica status solidi. C (01.06.2007)
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Growth of InN by Plasma-Assisted Molecular Beam Epitaxy on InN/GaN and p-GaN Templates
Readinger, Eric D., Chern, Grace, Reed, Meredith, Shen, P., Wraback, Michael, Syrkin, Alexander, Usikov, Alexander, Kovalenkov, Oleg, Ivantsov, Vladimir, Dmitriev, Vladimir
Published in ECS transactions (28.09.2007)
Published in ECS transactions (28.09.2007)
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Fabrication and Characterization of Ultraviolet Light Emitting Diodes with Nanometer Scale Compositionally Inhomogeneous Active Regions
Sampath, Anand V., Reed, Meredith, Chua, Christoper, Garrett, Gregory, Readinger, Eric D., Usikov, Alexander, Kovalenkov, Oleg, Shapovalova, Lisa, Shen, H, Dimtriev, Vladimir, Johnson, Noble, Wraback, Michael
Published in ECS transactions (28.09.2007)
Published in ECS transactions (28.09.2007)
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Backflow reactor liner for protection of growth surfaces and for balancing flow in the growth liner
Ivantsov Vladimir, Kovalenkov Oleg, Syrkin Alexander, Shapovalov Lisa
Year of Publication 21.02.2017
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Year of Publication 21.02.2017
Patent
GROWTH OF PLANAR AND SEMI-POLAR {1 1-2 2} GALLIUM NITRIDE WITH HYDRIDE VAPOR PHASE EPITAXY (HVPE)
IVANTSOV, VLADIMIR, SHAPOVALOVA, LISA, SYRKIN, ALEXANDER, EL-GHOROURY, HUSSEIN S, SPIBERG, PHILIPPE, KOVALENKOV, OLEG, USIKOV, ALEXANDER, BROWN, ROBERT
Year of Publication 29.05.2013
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Year of Publication 29.05.2013
Patent
Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE)
IVANTSOV VLADIMIR, KOVALENKOV OLEG, USIKOV ALEXANDER, BROWN ROBERT G. W, SHAPOVALOVA LISA, SYRKIN ALEXANDER, SPIBERG PHILIPPE, EL-GHOROURY HUSSEIN S
Year of Publication 18.03.2014
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Year of Publication 18.03.2014
Patent
HVPE apparatus and methods for growth of p-type single crystal group III nitride materials
SHAPOVALOV LISA, VOLKOVA ANNA, IVANTSOV VLADIMIR, SIZOV VLADIMIR, SOUKHOVEEV VITALI A, KOVALENKOV OLEG V, DMITRIEV VLADIMIR A, USIKOV ALEXANDER, SYRKIN ALEXANDER L
Year of Publication 11.02.2014
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Year of Publication 11.02.2014
Patent
GROWTH OF PLANAR AND SEMI-POLAR {1 1-2 2} GALLIUM NITRIDE WITH HYDRIDE VAPOR PHASE EPITAXY (HVPE)
IVANTSOV, VLADIMIR, SHAPOVALOVA, LISA, SYRKIN, ALEXANDER, EL-GHOROURY, HUSSEIN S, SPIBERG, PHILIPPE, KOVALENKOV, OLEG, USIKOV, ALEXANDER, BROWN, ROBERT
Year of Publication 27.04.2011
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Year of Publication 27.04.2011
Patent
Growth of InN by Plasma-Assisted Molecular Beam Epitaxy on InN and p-GaN Templates
Readinger, Eric D., Chern, Grace, Reed, Meredith, Shen, P., Wraback, Michael, Syrkin, Alexander, Usikov, Alexander, Kovalenkov, Oleg, Ivantsov, Vladimir, Dmitriev, Vladimir
Published in Meeting abstracts (Electrochemical Society) (28.09.2007)
Published in Meeting abstracts (Electrochemical Society) (28.09.2007)
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