4H to 3C Polytypic Transformation in Al+ Implanted SiC During High Temperature Annealing
Kuebler, L., Hershkovitz, E., Kouzminov, D., Gossmann, H.-J., Charnvanichborikarn, S., Hatem, C., Kim, H., Jones, K. S.
Published in Electronic materials letters (01.05.2024)
Published in Electronic materials letters (01.05.2024)
Get full text
Journal Article
Application of extra-low impact energy SIMS and data reduction algorithm to USJ profiling
Kouzminov, D., Merkulov, A., Arevalo, E., Grossmann, H.-J.
Published in Surface and interface analysis (01.01.2013)
Published in Surface and interface analysis (01.01.2013)
Get full text
Journal Article
Conference Proceeding
O 2+ versus Cs + for high depth resolution depth profiling of III–V nitride-based semiconductor devices
Kachan, M., Hunter, J., Kouzminov, D., Pivovarov, A., Gu, J., Stevie, F., Griffis, D.
Published in Applied surface science (15.06.2004)
Published in Applied surface science (15.06.2004)
Get full text
Journal Article
O2+ versus Cs+ for high depth resolution depth profiling of III–V nitride-based semiconductor devices
Kachan, M., Hunter, J., Kouzminov, D., Pivovarov, A., Gu, J., Stevie, F., Griffis, D.
Published in Applied surface science (15.06.2004)
Published in Applied surface science (15.06.2004)
Get full text
Journal Article
The role of carbon capping and Ar pressure on SiC surface degradation during high temperature annealing
Kuebler, L., Hershkovitz, E., Kouzminov, D., Gossmann, H.-J., Charnvanichborikarn, S., Kim, H., Pearton, S.J., Jones, K.S.
Published in Applied surface science (15.10.2024)
Published in Applied surface science (15.10.2024)
Get full text
Journal Article
Low energy electron induced X-ray emission spectrometry (LEXES) and secondary ion mass spectrometry (SIMS) sensitivity studies to ultra shallow arsenic implants
Graoui, H., Conti, G., Hilkene, M., McComb, B., Tjandra, A., Foad, M.A., Kouzminov, D., Hunter, J., Hitzman, C.J., Evans, C.A.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.08.2005)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.08.2005)
Get full text
Journal Article
O2+ versus Cs+ for high depth resolution depth profiling of III-V nitride-based semiconductor devices
KACHAN, M, HUNTER, J, KOUZMINOV, D, PIVOVAROV, A, GU, J, STEVIE, F, GRIFFIS, D
Published in Applied surface science (2004)
Get full text
Published in Applied surface science (2004)
Conference Proceeding
Impact of gallium implant for advanced CMOS halo/pocket optimization
Chin, Y. L., Yang, C. Y., Lee, T. H., Yeh, S. W., Chang, W. F., Huang, S. C., Yang, N. H., Chien, C. C., Lin, J. F., Li, G., Wu, J. Y., Guo, B. N., Colombeau, B., Thanigaivelan, T., Pradhan, N., Wu, T., Hou, M., Chen, S., Chung, C., Toh, T., Kouzminov, D., Barrett, D., Shim, K. H.
Published in 2014 20th International Conference on Ion Implantation Technology (IIT) (01.06.2014)
Published in 2014 20th International Conference on Ion Implantation Technology (IIT) (01.06.2014)
Get full text
Conference Proceeding
28nm Device improvement studies by replacing Indium with Gallium halo
Chin, Y. L., Wei, C. H., Yang, C. Y., Yeh, S. W., Chang, W. F., Huang, S. C., Chiang, C. K., Chien, C. C., Lin, J. F., Wu, J. Y., Guo, B. N., Colombeau, B., Pradhan, N., Wu, T., Hou, M., Chen, S., Chung, C., Toh, T., Kouzminov, D., Barrett, D., Shim, K. H.
Published in 2014 International Workshop on Junction Technology (IWJT) (01.05.2014)
Published in 2014 International Workshop on Junction Technology (IWJT) (01.05.2014)
Get full text
Conference Proceeding
Comparison of indium metrology using LEXES and SIMS [semiconductor doping]
Kouzminov, D., Yupu Li, Hunter, J., Graoui, H., Al-Bayati, A., Foad, M., Staub, P., Hombourger, C., Schuhmacher, M.
Published in Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on (2002)
Published in Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on (2002)
Get full text
Conference Proceeding