The 1.6-kV AlGaN/GaN HFETs
Tipirneni, N., Koudymov, A., Adivarahan, V., Yang, J., Simin, G., Khan, M.A.
Published in IEEE electron device letters (01.09.2006)
Published in IEEE electron device letters (01.09.2006)
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Journal Article
Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm
Adivarahan, V., Yang, J., Koudymov, A., Simin, G., Khan, M.A.
Published in IEEE electron device letters (01.08.2005)
Published in IEEE electron device letters (01.08.2005)
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Journal Article
Universal compact model for long- and short-channel Thin-Film Transistors
Iñiguez, Benjamin, Picos, Rodrigo, Veksler, Dmitry, Koudymov, A., Shur, Michael S., Ytterdal, Trond, Jackson, Warren
Published in Solid-state electronics (01.03.2008)
Published in Solid-state electronics (01.03.2008)
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Journal Article
Conference Proceeding
Mechanism of current collapse removal in field-plated nitride HFETs
Koudymov, A., Adivarahan, V., Yang, J., Simin, G., Khan, M.A.
Published in IEEE electron device letters (01.10.2005)
Published in IEEE electron device letters (01.10.2005)
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Journal Article
Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications
Khan, M.A., Simin, G., Jinwei Yang, Jianping Zhang, Koudymov, A., Shur, M.S., Gaska, R., Xuhong Hu, Tarakji, A.
Published in IEEE transactions on microwave theory and techniques (01.02.2003)
Published in IEEE transactions on microwave theory and techniques (01.02.2003)
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Journal Article
Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors
Adivarahan, V., Gaevski, M., Sun, W.H., Fatima, H., Koudymov, A., Saygi, S., Simin, G., Yang, J., Khan, M.A., Tarakji, A., Shur, M.S., Gaska, R.
Published in IEEE electron device letters (01.09.2003)
Published in IEEE electron device letters (01.09.2003)
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Journal Article
Thermal management of AlGaN-GaN HFETs on sapphire using flip-chip bonding with epoxy underfill
Jie Sun, Fatima, H., Koudymov, A., Chitnis, A., Hu, X., Wang, H.-M., Zhang, J., Simin, G., Yang, J., Khan, M.A.
Published in IEEE electron device letters (01.06.2003)
Published in IEEE electron device letters (01.06.2003)
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Journal Article
Selectively Doped High-Power AlGaN/InGaN/GaN MOS-DHFET
Adivarahan, V., Gaevski, M., Koudymov, A., Yang, J., Simin, G., Khan, M.A.
Published in IEEE electron device letters (01.03.2007)
Published in IEEE electron device letters (01.03.2007)
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Journal Article
Power Stability of AlGaN/GaN HFETs at 20 W/mm in the Pinched-Off Operation Mode
Koudymov, A., Wang, C.X., Adivarahan, V., Yang, J., Simin, G., Khan, M.A.
Published in IEEE electron device letters (01.01.2007)
Published in IEEE electron device letters (01.01.2007)
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Journal Article
Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs
Koudymov, A., Xuhong Hu, Simin, K., Simin, G., Ali, M., Yang, J., Asif Khan, M.
Published in IEEE electron device letters (01.08.2002)
Published in IEEE electron device letters (01.08.2002)
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Journal Article
High-power RF switching using III-nitride metal-oxide-semiconductor heterojunction capacitors
Simin, G., Koudymov, A., Yang, Z.-J., Adivarahan, V., Yang, J., Khan, M.A.
Published in IEEE electron device letters (01.02.2005)
Published in IEEE electron device letters (01.02.2005)
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Journal Article
Cryogenic RF switch using III-nitride MOSHFETs
SIMIN, G, KOUDYMOV, A, YANG, Z, HU, X, YANG, J, SHUR, M, GASKA, R
Published in Electronics letters (12.02.2009)
Published in Electronics letters (12.02.2009)
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Journal Article
Multigate GaN RF Switches With Capacitively Coupled Contacts
Simin, G., Khan, B., Jingbo Wang, Koudymov, A., Gaevski, M., Jain, R., Yang, J., Hu, X., Gaska, R., Shur, M.
Published in IEEE electron device letters (01.09.2009)
Published in IEEE electron device letters (01.09.2009)
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Journal Article
Stable 20 W/mm AlGaN-GaN MOSHFET
Simin, G., Adivarahan, V., Yang, J., Koudymov, A., Rai, S., Asif Khan, M.
Published in Electronics letters (23.06.2005)
Published in Electronics letters (23.06.2005)
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Journal Article
Dynamic current-voltage characteristics of III-N HFETs
Koudymov, A., Simin, G., Khan, M.A., Tarakji, A., Gaska, R., Shur, M.S.
Published in IEEE electron device letters (01.11.2003)
Published in IEEE electron device letters (01.11.2003)
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Journal Article
GaN/AlGaN p-channel inverted heterostructure JFET
Shatalov, M., Simin, G., Jianping Zhang, Adivarahan, V., Koudymov, A., Pachipulusu, R., Asif Khan, M.
Published in IEEE electron device letters (01.08.2002)
Published in IEEE electron device letters (01.08.2002)
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Journal Article
RF Transmission Line Method for Wide-Bandgap Heterostructures
Koudymov, A., Pala, N., Tokranov, V., Oktyabrsky, S., Gaevski, M., Jain, R., Yang, J., Hu, X., Shur, M., Gaska, R., Simin, G.
Published in IEEE electron device letters (01.05.2009)
Published in IEEE electron device letters (01.05.2009)
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Journal Article
Drain-to-gate field engineering for improved frequency response of GaN-based HEMTs
Pala, N., Hu, X., Deng, J., Yang, J., Gaska, R., Yang, Z., Koudymov, A., Shur, M.S., Simin, G.
Published in Solid-state electronics (01.08.2008)
Published in Solid-state electronics (01.08.2008)
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Journal Article