Enhancing the Circular Polarization of Spin Light-Emitting Diodes by Processing in Selenium Vapor
Dorokhin, M. V., Demina, P. B., Budanov, A. V., Vlasov, Yu. N., Kotov, G. I., Zdoroveyshchev, A. V., Trushin, V. N., Zvonkov, B. N.
Published in Technical physics letters (01.03.2019)
Published in Technical physics letters (01.03.2019)
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Synthesis of a Cu2SnS3 ternary compound by thermal annealing of a metal layer in sulfur vapor
Budanov, A V, Vlasov, Yu N, Kotov, G I, Rudnev, E V, Ternovaya, V E, Ivkov, S A
Published in Journal of physics. Conference series (01.12.2019)
Published in Journal of physics. Conference series (01.12.2019)
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Investigation of the Current–Voltage Characteristics of New MnO2/GaAs(100) and V2O5/GaAs(100) Heterostructures Subjected to Heat Treatment
Sladkopevtsev, B. V., Kotov, G. I., Arsentyev, I. N., Shashkin, I. S., Mittova, I. Ya, Tomina, E. V., Samsonov, A. A., Kostenko, P. V.
Published in Semiconductors (Woodbury, N.Y.) (01.08.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.08.2019)
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Journal Article
Synthesis of a Cu 2 SnS 3 ternary compound by thermal annealing of a metal layer in sulfur vapor
Budanov, A V, Vlasov, Yu N, Kotov, G I, Rudnev, E V, Ternovaya, V E, Ivkov, S A
Published in Journal of physics. Conference series (01.12.2019)
Published in Journal of physics. Conference series (01.12.2019)
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Journal Article
Investigation of the Current–Voltage Characteristics of New MnO{sub 2}/GaAs(100) and V{sub 2}O{sub 5}/GaAs(100) Heterostructures Subjected to Heat Treatment
Sladkopevtsev, B. V., Kotov, G. I., Arsentyev, I. N., Shashkin, I. S., Mittova, I. Ya, Tomina, E. V., Samsonov, A. A., Kostenko, P. V.
Published in Semiconductors (Woodbury, N.Y.) (15.08.2019)
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Published in Semiconductors (Woodbury, N.Y.) (15.08.2019)
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HETEROJUNCTION p-Cu2SnS3/n-ZnO
BUDANOV, A. V., VLASOV, YU. N., KOTOV, G. I., SYNOROV, YU.V., PANKOV, S. YU, RUDNEV, E. V., TERNOVAYA, V. E., IVKOV, S. A.
Published in Chalcogenide letters (01.09.2020)
Published in Chalcogenide letters (01.09.2020)
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Passivation of the GaP(111) surface by treatment in selenium vapors
Bezryadin, N. N., Kotov, G. I., Arsent’ev, I. N., Kuzubov, S. V., Vlasov, Yu. N., Panin, G. A., Kortunov, A. V.
Published in Technical physics letters (01.02.2014)
Published in Technical physics letters (01.02.2014)
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Reconstruction and electron states of a Ga2Se3-GaAs heterointerface
Agapov, B. L., Bezryadin, N. N., Kotov, G. I., Sumets, M. P., Arsent’ev, I. N.
Published in Semiconductors (Woodbury, N.Y.) (01.06.1999)
Published in Semiconductors (Woodbury, N.Y.) (01.06.1999)
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Interface reconstruction in the Ga2Se3/GaAs(100) and In2Se3/InAs(100) nanoheterostructures
Bezryadin, N. N., Kotov, G. I., Kuzubov, S. V., Boldyreva, Ya. A., Agapov, B. L.
Published in Crystallography reports (01.05.2011)
Published in Crystallography reports (01.05.2011)
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Nanolayer of the A 2 III B 3 VI (111) phase with ordered cation vacancies on GaAs(111) and InAs(111)
Bezryadin, N. N., Kotov, G. I., Kuzubov, S. V., Agapov, B. L.
Published in Crystallography reports (01.09.2010)
Published in Crystallography reports (01.09.2010)
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A technique for recording and analyzing the isothermal relaxation of the capacitance of semiconductor heterostructures
Bezryadin, N. N., Kotov, G. I., Kadantsev, A. V., Vasil’eva, L. V., Vlasov, Yu. N.
Published in Instruments and experimental techniques (New York) (01.05.2010)
Published in Instruments and experimental techniques (New York) (01.05.2010)
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