Properties of epitaxial ZnO:P films
Rogozin, I. V., Georgobiani, A. N., Kotlyarevsky, M. B., Demin, V. I.
Published in Inorganic materials (01.03.2013)
Published in Inorganic materials (01.03.2013)
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Journal Article
Activation of p-type conduction in ZnO:N films by annealing in atomic oxygen
Rogozin, I. V., Georgobiani, A. N., Kotlyarevsky, M. B., Demin, V. I., Lepnev, L. S.
Published in Inorganic materials (01.06.2013)
Published in Inorganic materials (01.06.2013)
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Journal Article
Radical-Beam Gettering Epitaxy of ZnO Films under UV Irradiation
Georgobiani, A. N., Kotlyarevsky, M. B., Rogozin, I. V., Marakhovskii, A. V.
Published in Inorganic materials (01.06.2005)
Published in Inorganic materials (01.06.2005)
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Journal Article
Structural and electroluminescent properties of n-ZnO/p-GaN:Mg heterojunctions
Rogozin, I. V., Georgobiani, A. N., Kotlyarevsky, M. B., Datskevich, N. P.
Published in Inorganic materials (01.11.2010)
Published in Inorganic materials (01.11.2010)
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Journal Article
V N-Mg defect complexes as compensating centers in GaN:Mg
Rogozin, I. V., Georgobiani, A. N., Kotlyarevsky, M. B.
Published in Inorganic materials (01.11.2008)
Published in Inorganic materials (01.11.2008)
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Journal Article
p-n junctions in ZnO implanted with group V ions
Rogozin, I. V., Georgobiani, A. N., Kotlyarevsky, M. B., Demin, V. I., Marakhovskii, A. V.
Published in Inorganic materials (01.09.2010)
Published in Inorganic materials (01.09.2010)
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Journal Article
Compensation mechanism for hole conduction in ZnO:N films
Rogozin, I. V., Georgobiani, A. N., Kotlyarevsky, M. B., Marakhovskii, A. V.
Published in Inorganic materials (01.04.2009)
Published in Inorganic materials (01.04.2009)
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Journal Article
VN-Mg defect complexes as compensating centers in GaN:Mg
Rogozin, I. V., Georgobiani, A. N., Kotlyarevsky, M. B.
Published in Inorganic materials (01.11.2008)
Published in Inorganic materials (01.11.2008)
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Journal Article
Fabrication of p-n junctions in ZnO by arsenic ion implantation followed by annealing in atomic oxygen
Rogozin, I. V., Georgobiani, A. N., Kotlyarevsky, M. B.
Published in Inorganic materials (01.07.2007)
Published in Inorganic materials (01.07.2007)
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Journal Article
Radical-beam gettering epitaxy of GaN layers on nitrogen-ion-implanted GaAs substrates
Georgobiani, A. N., Rogozin, I. V., Kotlyarevsky, M. B.
Published in Inorganic materials (01.08.2006)
Published in Inorganic materials (01.08.2006)
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Journal Article
Radical beam gettering epitaxy of II–VI compounds
Georgobiani, A.N., Kotlyarevsky, M.B.
Published in Nuclear physics. Section B, Proceedings supplement (01.02.1998)
Published in Nuclear physics. Section B, Proceedings supplement (01.02.1998)
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