Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles
Makarenko, L.F., Moll, M., Evans-Freeman, J.H., Lastovski, S.B., Murin, L.I., Korshunov, F.P.
Published in Physica. B, Condensed matter (01.08.2012)
Published in Physica. B, Condensed matter (01.08.2012)
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Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures
Makarenko, L.F., Lastovski, S.B., Korshunov, F.P., Murin, L.I., Moll, M.
Published in Physica. B, Condensed matter (15.12.2009)
Published in Physica. B, Condensed matter (15.12.2009)
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Influence of electron irradiation on characteristics of Si 1− x Ge x p–n-structures
Korshunov, F.P., Markevich, V.P., Murin, L.I., Lastovsky, S.B., Bogatyrev, Yu.V., Abrosimov, N.V.
Published in Vacuum (2007)
Published in Vacuum (2007)
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Defect-impurity complexes with high thermal stability in epi-Si n +-p diodes irradiated with MeV electrons
Korshunov, F.P., Lastovskii, S.B., Markevich, V.P., Murin, L.I., Bogatyrev, Yu.V., Peaker, A.R.
Published in Vacuum (01.05.2009)
Published in Vacuum (01.05.2009)
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Influence of electron irradiation on characteristics of Si1−xGex p–n-structures
Korshunov, F.P., Markevich, V.P., Murin, L.I., Lastovsky, S.B., Bogatyrev, Yu.V., Abrosimov, N.V.
Published in Vacuum (15.06.2007)
Published in Vacuum (15.06.2007)
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Elimination and formation of electrically active defects in hydrogenated silicon particle detectors irradiated with electrons
Makarenko, L.F., Korshunov, F.P., Lastovski, S.B., Kazuchits, N.M., Rusetsky, M.S., Fretwurst, E., Lindström, G., Moll, M., Pintilie, I., Zamiatin, N.I.
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (21.10.2005)
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (21.10.2005)
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Low-temperature photoluminescence characterization of defects formation in hydrogen and helium implanted silicon at post-implantation annealing
Mudryi, A.V., Korshunov, F.P., Patuk, A.I., Shakin, I.A., Larionova, T.P., Ulyashin, A.G., Job, R., Fahrner, W.R., Emtsev, V.V., Davydov, V.Yu, Oganesyan, G.
Published in Physica. B, Condensed matter (01.12.2001)
Published in Physica. B, Condensed matter (01.12.2001)
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Study of the recombination properties of thermostable radiation defects in p–n structures manufactured in high resistivity neutron transmutation-doped silicon
Korshunov, F.P., Zhdanovich, N.E., Marchenko, I.G., Karas, V.I., Troschinskii, V.T.
Published in Vacuum (10.03.2003)
Published in Vacuum (10.03.2003)
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Investigation of radiation-induced defects in the electron irradiated power transistor structures
Korshunov, F.P., Bogatyrev, Yu.V., Lastovsky, S.B., Kulgachev, V.I., Anufriev, L.P., Rubtsevich, I.I., Golubev, N.F.
Published in Vacuum (10.03.2003)
Published in Vacuum (10.03.2003)
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A luminescence study of defects and internal strains in ion-implanted silicon on sapphire films
Mudryi, A.V., Patuk, A.I., Shakin, I.A., Korshunov, F.P., Zuev, V.A.
Published in Materials chemistry and physics (01.08.1996)
Published in Materials chemistry and physics (01.08.1996)
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Radiation effects in bipolar and CMOS integrated microcircuits
Korshunov, F.P., Bogatyrev, Yu.V., Belous, A.I., Shwedov, S.V., Lastovsky, S.B., Kulgachev, V.I., Gurinovich, V.A.
Published in 2008 18th International Crimean Conference - Microwave & Telecommunication Technology (01.09.2008)
Published in 2008 18th International Crimean Conference - Microwave & Telecommunication Technology (01.09.2008)
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Maintenance of Serviceability of Various Perspective Semiconductor Devices at Radiation Influence
Korshunov, F.P., Bogatyrev, Yu.V., Belous, A.I., Shwedov, S.V., Golubev, N.F., Lastovsky, S.B., Kulgachev, V.I.
Published in 2007 17th International Crimean Conference - Microwave & Telecommunication Technology (01.09.2007)
Published in 2007 17th International Crimean Conference - Microwave & Telecommunication Technology (01.09.2007)
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