Process integration of a 27nm, 16Gb Cu ReRAM
Zahurak, John, Miyata, Koji, Fischer, Mark, Balakrishnan, Murali, Chhajed, Sameer, Wells, David, Hong Li, Torsi, Alessandro, Lim, Jay, Korber, Mark, Nakazawa, Keiichi, Mayuzumi, Satoru, Honda, Motonari, Sills, Scott, Yasuda, Shuichiro, Calderoni, Alessandro, Cook, Beth, Damarla, Gowri, Tran, Hai, Bei Wang, Cardon, Chris, Karda, Kamal, Okuno, Jun, Johnson, Adam, Kunihiro, Takafumi, Sumino, Jun, Tsukamoto, Masanori, Aratani, Katsuhisa, Ramaswamy, Nirmal, Otsuka, Wataru, Prall, Kirk
Published in 2014 IEEE International Electron Devices Meeting (01.12.2014)
Published in 2014 IEEE International Electron Devices Meeting (01.12.2014)
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