Hardware implementation of associative memory characteristics with analogue-type resistive-switching device
Moon, Kibong, Park, Sangsu, Jang, Junwoo, Lee, Daeseok, Woo, Jiyong, Cha, Euijun, Lee, Sangheon, Park, Jaesung, Song, Jeonghwan, Koo, Yunmo, Hwang, Hyunsang
Published in Nanotechnology (12.12.2014)
Published in Nanotechnology (12.12.2014)
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Journal Article
Effects of RESET Current Overshoot and Resistance State on Reliability of RRAM
Jeonghwan Song, Daeseok Lee, Jiyong Woo, Yunmo Koo, Euijun Cha, Sangheon Lee, Jaesung Park, Kibong Moon, Misha, Saiful Haque, Prakash, Amit, Hyunsang Hwang
Published in IEEE electron device letters (01.06.2014)
Published in IEEE electron device letters (01.06.2014)
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Journal Article
Te-based amorphous binary OTS device with excellent selector characteristics for x-point memory applications
Yunmo Koo, Kyungjoon Baek, Hyunsang Hwang
Published in 2016 IEEE Symposium on VLSI Technology (01.06.2016)
Published in 2016 IEEE Symposium on VLSI Technology (01.06.2016)
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Conference Proceeding
Highly Reliable Resistive Switching Without an Initial Forming Operation by Defect Engineering
Sangheon Lee, Daeseok Lee, Jiyong Woo, Euijun Cha, Jaesung Park, Jeonghwan Song, Kibong Moon, Yunmo Koo, Attari, Behnoush, Tamanna, Nusrat, Haque, Misha Saiful, Hyunsang Hwang
Published in IEEE electron device letters (01.12.2013)
Published in IEEE electron device letters (01.12.2013)
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Journal Article
Optimized Lightning-Rod Effect to Overcome Trade-Off Between Switching Uniformity and On/Off Ratio in ReRAM
Lee, Daeseok, Song, Jeonghwan, Woo, Jiyong, Park, Jaesung, Park, Sangsu, Cha, Euijun, Lee, Sangheon, Koo, Yunmo, Moon, Kibong, Hwang, Hyunsang
Published in IEEE electron device letters (01.02.2014)
Published in IEEE electron device letters (01.02.2014)
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Journal Article
Electrical and reliability characteristics of a scaled (∼30nm) tunnel barrier selector (W/Ta2O5/TaOx/TiO2/TiN) with excellent performance (JMAX > 107A/cm2)
Jiyong Woo, Jeonghwan Song, Kibong Moon, Ji Hyun Lee, Euijun Cha, Prakash, Amit, Daeseok Lee, Sangheon Lee, Jaesung Park, Yunmo Koo, Chan Gyung Park, Hyunsang Hwang
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
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Conference Proceeding
Dual functionality of threshold and multilevel resistive switching characteristics in nanoscale HfO2-based RRAM devices for artificial neuron and synapse elements
Woo, Jiyong, Lee, Dongwook, Koo, Yunmo, Hwang, Hyunsang
Published in Microelectronic engineering (05.10.2017)
Published in Microelectronic engineering (05.10.2017)
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Journal Article
Government data openness and knowledge management: configurational patterns for national competitiveness
Ham, Juyeon, Koo, Yunmo, Lee, Jae Nam
Published in Industrial management + data systems (16.11.2022)
Published in Industrial management + data systems (16.11.2022)
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Journal Article
Provision and usage of open government data: strategic transformation paths
Ham, Juyeon, Koo, Yunmo, Lee, Jae-Nam
Published in Industrial management + data systems (19.09.2019)
Published in Industrial management + data systems (19.09.2019)
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Journal Article
Congruent patterns of outsourcing capabilities: A bilateral perspective
Koo, Yunmo, Park, YoungKi, Ham, Juyeon, Lee, Jae-Nam
Published in The journal of strategic information systems (01.12.2019)
Published in The journal of strategic information systems (01.12.2019)
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Journal Article
Structurally Engineered Stackable and Scalable 3D Titanium-Oxide Switching Devices for High-Density Nanoscale Memory
Lee, Daeseok, Park, Jaesung, Park, Jaehyuk, Woo, Jiyong, Cha, Euijun, Lee, Sangheon, Moon, Kibong, Song, Jeonghwan, Koo, Yunmo, Hwang, Hyunsang
Published in Advanced materials (Weinheim) (01.01.2015)
Published in Advanced materials (Weinheim) (01.01.2015)
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Journal Article
Effect of multi-vendor outsourcing on organizational learning: A social relation perspective
Koo, Yunmo, Lee, Jae-Nam, Heng, Cheng Suang, Park, Jihun
Published in Information & management (01.04.2017)
Published in Information & management (01.04.2017)
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Journal Article
Nanoscale (∼10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode
Euijun Cha, Jiyong Woo, Daeseok Lee, Sangheon Lee, Jeonghwan Song, Yunmo Koo, Jihyun Lee, Chan Gyung Park, Moon Young Yang, Kamiya, Katsumasa, Shiraishi, Kenji, Magyari-Kope, Blanka, Nishi, Yoshio, Hyunsang Hwang
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
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Conference Proceeding
Dual functionality of threshold and multilevel resistive switching characteristics in nanoscale HfO^sub 2^-based RRAM devices for artificial neuron and synapse elements
Woo, Jiyong, Lee, Dongwook, Koo, Yunmo, Hwang, Hyunsang
Published in Microelectronic engineering (05.10.2017)
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Published in Microelectronic engineering (05.10.2017)
Journal Article