Study of avalanche breakdown and impact ionization in 4H silicon carbide
Konstantinov, A. O., Wahab, Q., Nordell, N., Lindefelt, U.
Published in Journal of electronic materials (01.04.1998)
Published in Journal of electronic materials (01.04.1998)
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Journal Article
Material defects in 4H-silicon carbide diodes
Zimmermann, U., Osterman, J., Kuylenstierna, D., Hallén, Anders, Konstantinov, A. O., Vetter, W. M., Dudley, M.
Published in Journal of applied physics (2003)
Published in Journal of applied physics (2003)
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Journal Article
Effect of vapor composition on polytype homogeneity of epitaxial silicon carbide
Konstantinov, A. O., Hallin, C., Kordina, O., Janzén, E.
Published in Journal of applied physics (15.11.1996)
Published in Journal of applied physics (15.11.1996)
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Journal Article
The mechanism for cubic SiC formation on off-oriented substrates
Konstantinov, A.O., Hallin, C., Pécz, B., Kordina, O., Janzén, E.
Published in Journal of crystal growth (01.07.1997)
Published in Journal of crystal growth (01.07.1997)
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Journal Article
Effect of irradiation with fast neutrons on electrical characteristics of devices based on CVD 4H-SiC epitaxial layers
Kalinina, E. V., Kholuyanov, G. F., Davydov, D. V., Strel’chuk, A. M., Hallén, A., Konstantinov, A. O., Luchinin, V. V., Nikiforov, A. Yu
Published in Semiconductors (Woodbury, N.Y.) (01.10.2003)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2003)
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Journal Article
On the possibility of creating a superfast-recovery silicon carbide diode
Grekhov, I. V., Ivanov, P. A., Konstantinov, A. O., Samsonova, T. P.
Published in Technical physics letters (01.07.2002)
Published in Technical physics letters (01.07.2002)
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Journal Article
Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions
Kalinina, E. V., Kholuyanov, G. F., Onushkin, G. A., Davydov, D. V., Strel’chuk, A. M., Konstantinov, A. O., Hallén, A., Nikiforov, A. Yu, Skuratov, V. A., Havancsak, K.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2004)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2004)
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Journal Article
High-resolution short range ion detectors based on 4H-SiC films
Ivanov, A. M., Kalinina, E. V., Konstantinov, A. O., Onushkin, G. A., Strokan, N. B., Kholuyanov, G. F., Hallén, A.
Published in Technical physics letters (01.07.2004)
Published in Technical physics letters (01.07.2004)
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Journal Article
Equilibrium crystal shapes for 6H AND 4H SiC grown on non-planar substrates
Nordell, N., Karlsson, S., Konstantinov, A.O.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
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Journal Article
Conference Proceeding
Silicon carbide detectors of high-energy particles
Violina, G. N., Kalinina, E. V., Kholujanov, G. F., Kossov, V. G., Yafaev, R. R., Hallén, A., Konstantinov, A. O.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2002)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2002)
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Journal Article
High-voltage operation of field-effect transistors in silicon carbide
Konstantinov, A.O., Ivanov, P.A., Nordell, N., Karlsson, S., Harris, C.I.
Published in IEEE electron device letters (01.11.1997)
Published in IEEE electron device letters (01.11.1997)
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Journal Article
Photoelectric properties of p +-n junctions based on 4H-SiC ion-implanted with aluminum
Violina, G. N., Kalinina, E. V., Kholujanov, G. F., Onushkin, G. A., Kossov, V. G., Yafaev, R. R., Hallén, A., Konstantinov, A. O.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2002)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2002)
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Journal Article
Temperature dependence of the quantum efficiency of 4H-SiC-based Schottky photodiodes
Blank, T. V., Gol’dberg, Yu. A., Kalinina, E. V., Konstantinov, O. V., Konstantinov, A. O., Hallen, A.
Published in Technical physics letters (01.01.2001)
Published in Technical physics letters (01.01.2001)
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Journal Article
Fabrication and properties of high-resistivity porous silicon carbide for SiC power device passivation
Konstantinov, A.O., Harris, C.I., Henry, A., Janzén, E.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (1995)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (1995)
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Journal Article
Conference Proceeding
Effects of microwave fields on recombination processes in 4H and 6H SiC
Son, N. T., Sörman, E., Chen, W. M., Bergman, J. P., Hallin, C., Kordina, O., Konstantinov, A. O., Monemar, B., Janzén, E., Hofmann, D. M., Volm, D., Meyer, B. K.
Published in Journal of applied physics (15.02.1997)
Published in Journal of applied physics (15.02.1997)
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Journal Article
Determination of the electron effective-mass tensor in 4H SiC
Volm, D, Meyer, BK, Hofmann, DM, Chen, WM, Son, NT, Persson, C, Lindefelt, U, Kordina, O, Sörman, E, Konstantinov, AO, Monemar, B, Janzén, E
Published in Physical review. B, Condensed matter (15.06.1996)
Published in Physical review. B, Condensed matter (15.06.1996)
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SiC – a semiconductor for high-power, high-temperature and high-frequency devices
Janzén, E, Kordina, O, Henry, A, Chen, W M, Son, N T, Monemar, B, Sörman, E, Bergman, P, Harris, C I, Yakimova, R, Tuominen, M, Konstantinov, A O, Hallin, C, Hemmingsson, C
Published in Physica scripta (01.01.1994)
Published in Physica scripta (01.01.1994)
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