Ultra-wide bandgap semiconductor Ga2O3 power diodes
Zhang, Jincheng, Dong, Pengfei, Dang, Kui, Zhang, Yanni, Yan, Qinglong, Xiang, Hu, Su, Jie, Liu, Zhihong, Si, Mengwei, Gao, Jiacheng, Kong, Moufu, Zhou, Hong, Hao, Yue
Published in Nature communications (06.07.2022)
Published in Nature communications (06.07.2022)
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Journal Article
A 600-V Super-Junction pLDMOS Utilizing Electron Current to Enhance Current Capability
Yi, Bo, Kong, Moufu, Lin, Jia, Cheng, Junji, Huang, Haimeng, Chen, Xingbi
Published in IEEE transactions on electron devices (01.05.2019)
Published in IEEE transactions on electron devices (01.05.2019)
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Journal Article
Study on Dual Channel n-p-LDMOS Power Devices With Three Terminals
Kong, Moufu, Du, Wenfang, Chen, Xingbi
Published in IEEE transactions on electron devices (01.10.2013)
Published in IEEE transactions on electron devices (01.10.2013)
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Journal Article
A novel diode-clamped CSTBT with ultra-low on-state voltage and saturation current
Li, Ping, Kong, Moufu, Chen, Xingbi
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
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Conference Proceeding
Journal Article
A Novel No Miller Plateau SOI-LIGBT With Low Saturation Current and Improved Switching Performance
Zhang, Bingke, Kong, Moufu, Yi, Bo, Chen, Xingbi
Published in IEEE transactions on electron devices (01.05.2020)
Published in IEEE transactions on electron devices (01.05.2020)
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Journal Article
A Novel GaN Superjunction FinFET Power Device With a P-Type NiO Pillar for Improved Performance
Kong, Moufu, Yu, Ning, Zhang, Bingke, Cheng, Zeyu, Yi, Bo, Yang, Hongqiang
Published in IEEE transactions on electron devices (01.12.2023)
Published in IEEE transactions on electron devices (01.12.2023)
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Journal Article
A Novel Low on-State Voltage SOI LIGBT With Enhanced Conductivity Modulation
Zhang, Bingke, Kong, Moufu, Yi, Bo, Chen, Xingbi
Published in IEEE transactions on electron devices (01.11.2019)
Published in IEEE transactions on electron devices (01.11.2019)
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Journal Article
Investigation of a Novel Enhancement-Mode Al .\text} Ga .\text} N/AlN/Al } Ga - }\textit\text} N/GaN MIS-HEMT for High \textit} and Low \textit
Yi, Bo, Xu, Yi, Cheng, Junji, Huang, Haimeng, Kong, Moufu, Yang, Hongqiang
Published in IEEE transactions on electron devices (12.05.2023)
Published in IEEE transactions on electron devices (12.05.2023)
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Journal Article
A Novel Diode-Clamped Carrier Stored Trench IGBT With Improved Performances
Yi, Bo, Xie, XinTong, Kong, MouFu, Cheng, JunJi, Chen, XingBi
Published in IEEE transactions on electron devices (01.01.2020)
Published in IEEE transactions on electron devices (01.01.2020)
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Journal Article