Toward Conformal Damage-Free Doping With Abrupt Ultrashallow Junction: Formation of Si Monolayers and Laser Anneal as a Novel Doping Technique for InGaAs nMOSFETs
Kong, Eugene Y-J, Pengfei Guo, Xiao Gong, Bin Liu, Yee-Chia Yeo
Published in IEEE transactions on electron devices (01.04.2014)
Published in IEEE transactions on electron devices (01.04.2014)
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Journal Article
CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In0.53Ga0.47As n-MOSFETs
Ivana, Kong, Eugene Y.-J., Subramanian, Sujith, Zhou, Qian, Pan, Jisheng, Yeo, Yee-Chia
Published in Solid-state electronics (01.12.2012)
Published in Solid-state electronics (01.12.2012)
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Journal Article
Conference Proceeding
Plasma Doping of InGaAs at Elevated Substrate Temperature for Reduced Sheet Resistance and Defect Formation
Kong, Eugene Y.-J, Subramanian, Sujith, D'Costa, Vijay Richard, Lye-Hing Chua, Wei Zou, Chan, Cleon, Henry, Todd, Yee-Chia Yeo
Published in IEEE transactions on electron devices (01.09.2014)
Published in IEEE transactions on electron devices (01.09.2014)
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Journal Article
Strained Silicon-on-Insulator Platform for Co-Integration of Logic and RF-Part II: Comb-Like Device Architecture
Liang, Jie, Sun, Chen, Xu, Haiwen, Kong, Eugene Y.-J., Nguyen, Bich-Yen, Schwarzenbach, Walter, Maleville, Christophe, Berthelon, Remy, Weber, Olivier, Arnaud, Franck, Thean, Aaron V.-Y., Gong, Xiao
Published in IEEE transactions on electron devices (01.04.2022)
Published in IEEE transactions on electron devices (01.04.2022)
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Journal Article
Strained Silicon-on-Insulator Platform for Cointegration of Logic and RF-Part I: Implant-Induced Strain Relaxation
Sun, Chen, Xu, Haiwen, Liang, Jie, Kong, Eugene Y. -J., Nguyen, Bich-Yen, Schwarzenbach, Walter, Maleville, Christophe, Berthelon, Remy, Weber, Olivier, Arnaud, Franck, Wang, Xinke, Thean, Aaron V. -Y., Gong, Xiao
Published in IEEE transactions on electron devices (01.04.2021)
Published in IEEE transactions on electron devices (01.04.2021)
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Journal Article
Highly Scaled Strained Silicon-On-Insulator Technology for the 5G Era: Impact of Geometry and Annealing on Strain Retention and Device Performance of nMOSFETs
Kong, Eugene Y.-J., Yadav, Sachin, Lei, Dian, Kang, Yuye, Sivan, Maheswari, Li, Yida, Nguyen, Bich-Yen, Schwarzenbach, Walter, Ecarnot, Ludovic, Sellier, Manuel, Maleville, Christophe, Thean, Aaron V.-Y., Gong, Xiao
Published in IEEE transactions on electron devices (01.05.2019)
Published in IEEE transactions on electron devices (01.05.2019)
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Journal Article
Investigation of Pd–InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal–oxide–semiconductor field-effect transistors
Kong, Eugene Y.-J., Ivana, Zhang, Xingui, Zhou, Qian, Pan, Jisheng, Zhang, Zheng, Yeo, Yee-Chia
Published in Solid-state electronics (01.07.2013)
Published in Solid-state electronics (01.07.2013)
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Journal Article
Nanocrystal-engineered thin CuO film photocatalyst for visible-light-driven photocatalytic degradation of organic pollutant in aqueous solution
Katal, Reza, Masudy-panah, Saeid, Kong, Eugene Y.-J., Dasineh Khiavi, Negar, Abadi Farahani, Mohammad Hossein Davood, Gong, Xiao
Published in Catalysis today (15.01.2020)
Published in Catalysis today (15.01.2020)
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Journal Article
Ge0.95Sn0.05 Gate-All-Around p‑Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub‑3 nm Nanowire Width
Kang, Yuye, Xu, Shengqiang, Han, Kaizhen, Kong, Eugene Y.-J, Song, Zhigang, Luo, Sheng, Kumar, Annie, Wang, Chengkuan, Fan, Weijun, Liang, Gengchiau, Gong, Xiao
Published in Nano letters (14.07.2021)
Published in Nano letters (14.07.2021)
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Journal Article
Aluminum-incorporated p-CuO/n-ZnO photocathode coated with nanocrystal-engineered TiO2 protective layer for photoelectrochemical water splitting and hydrogen generation
Masudy-Panah, Saeid, Y-J, Kong Eugene, Khiavi, Negar Dasineh, Katal, Reza, Gong, Xiao
Published in Journal of materials chemistry. A, Materials for energy and sustainability (2018)
Published in Journal of materials chemistry. A, Materials for energy and sustainability (2018)
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Journal Article
The First GeSn Gate-All-Around Nanowire P-FET on the GeSnOI Substrate with Channel Length of 20 nm and Subthreshold Swing of 74 mV/decade
Kang, Yuye, Han, Kaizhen, Kong, Eugene Y.-J., Lei, Dian, Xu, Shengqiang, Wu, Ying, Huang, Yi-Chiau, Gong, Xiao
Published in 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2019)
Published in 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2019)
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Conference Proceeding
Ge 0.95 Sn 0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width
Kang, Yuye, Xu, Shengqiang, Han, Kaizhen, Kong, Eugene Y.-J., Song, Zhigang, Luo, Sheng, Kumar, Annie, Wang, Chengkuan, Fan, Weijun, Liang, Gengchiau, Gong, Xiao
Published in Nano letters (14.07.2021)
Published in Nano letters (14.07.2021)
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Journal Article
Aluminum-incorporated p-CuO/n-ZnO photocathode coated with nanocrystal-engineered TiO2 protective layer for photoelectrochemical water splitting and hydrogen generationElectronic supplementary information (ESI) available. See DOI: 10.1039/c8ta03027h
Masudy-Panah, Saeid, Eugene, Y.-J. Kong, Khiavi, Negar Dasineh, Katal, Reza, Gong, Xiao
Year of Publication 26.06.2018
Year of Publication 26.06.2018
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Journal Article
Aluminum-incorporated p-CuO/n-ZnO photocathode coated with nanocrystal-engineered TiO 2 protective layer for photoelectrochemical water splitting and hydrogen generation
Masudy-Panah, Saeid, Eugene, Y.-J. Kong, Khiavi, Negar Dasineh, Katal, Reza, Gong, Xiao
Published in Journal of materials chemistry. A, Materials for energy and sustainability (2018)
Published in Journal of materials chemistry. A, Materials for energy and sustainability (2018)
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Journal Article
P sub(2)S sub(5)/(NH sub(4)) sub(2)S sub(x)-Based Sulfur Monolayer Doping for Source/Drain Extensions in n-Channel InGaAs FETs
Subramanian, Sujith, Kong, Eugene Y-J, Li, Daosheng, Wicaksono, Satrio, Yoon, Soon Fatt, Yeo, Yee-Chia
Published in IEEE transactions on electron devices (01.08.2014)
Published in IEEE transactions on electron devices (01.08.2014)
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Journal Article
GeSn p-FinFETs with Sub-10 nm Fin Width Realized on a 200 mm GeSnOI Substrate: Lowest SS of 63 mV/decade, Highest Gm,int of 900 µS/µm, and High-Field µeff of 275 cm2/Vs
Lei, Dian, Han, Kaizhen, Lee, Kwang Hong, Huang, Yi-Chiau, Wang, Wei, Yadav, Sachin, Kumar, Annie, Wu, Ying, Heliu, Huiquan, Xu, Shengqiang, Kang, Yuye, Li, Yang, Kong, Eugene Y.-J., Tan, Chuan Seng, Gong, Xiao
Published in 2018 IEEE Symposium on VLSI Technology (01.06.2018)
Published in 2018 IEEE Symposium on VLSI Technology (01.06.2018)
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Conference Proceeding