Surface chemistry and transport effects in GaN hydride vapor phase epitaxy
Segal, A.S., Kondratyev, A.V., Karpov, S.Yu, Martin, D., Wagner, V., Ilegems, M.
Published in Journal of crystal growth (01.10.2004)
Published in Journal of crystal growth (01.10.2004)
Get full text
Journal Article
Experimental investigations of the Ag–Cu–Ge system
Akhmetova, A.M., Dinsdale, A.T., Khvan, A.V., Cheverikin, V.V., Kondratyev, A.V., Ivanov, D.O.
Published in Journal of alloys and compounds (05.05.2015)
Published in Journal of alloys and compounds (05.05.2015)
Get full text
Journal Article
Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors
Dauelsberg, M., Martin, C., Protzmann, H., Boyd, A.R., Thrush, E.J., Käppeler, J., Heuken, M., Talalaev, R.A., Yakovlev, E.V., Kondratyev, A.V.
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
Get full text
Journal Article
Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor
Martin, C., Dauelsberg, M., Protzmann, H., Boyd, A.R., Thrush, E.J., Heuken, M., Talalaev, R.A., Yakovlev, E.V., Kondratyev, A.V.
Published in Journal of crystal growth (01.05.2007)
Published in Journal of crystal growth (01.05.2007)
Get full text
Journal Article
Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study
Kondratyev, A.V., Talalaev, R.A., Lundin, W.V., Sakharov, A.V., Tsatsul’nikov, A.V., Zavarin, E.E., Fomin, A.V., Sizov, D.S.
Published in Journal of crystal growth (10.12.2004)
Published in Journal of crystal growth (10.12.2004)
Get full text
Journal Article
Effects of reactor pressure and residence time on GaN MOVPE growth efficiency
Lundin, W.V., Zavarin, E.E., Sizov, D.S., Sinitsin, M.A., Tsatsul’nikov, A.F., Kondratyev, A.V., Yakovlev, E.V., Talalaev, R.A.
Published in Journal of crystal growth (25.01.2006)
Published in Journal of crystal growth (25.01.2006)
Get full text
Journal Article
Comparison of silicon epitaxial growth on the 200- and 300-mm wafers from trichlorosilane in Centura reactors
Segal, A.S., Galyukov, A.O., Kondratyev, A.V., Sid’ko, A.P., Karpov, S.Yu, Makarov, Yu.N., Siebert, W., Storck, P.
Published in Microelectronic engineering (01.05.2001)
Published in Microelectronic engineering (01.05.2001)
Get full text
Journal Article