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ATANASSOVA, E, LYTVYN, P, KONAKOVA, R. V, MITIN, V. F, SPASSOV, D
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Published in Thin solid films (01.09.2011)
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Improvement of interface properties of AlGaN/GaN heterostructures under gamma-radiation
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Published in Applied surface science (30.11.2008)
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Trap parameters and conduction mechanism in HfO2-Ta2O5 mixed stacks in response to microwave irradiation
ATANASSOVA, E, KONAKOVA, R. V, MITIN, V. F, SPASSOV, D
Published in Microelectronic engineering (01.11.2010)
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Resistance formation mechanisms for contacts to n -GaN and n -AlN with high dislocation density
Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Zhilyaev, Yu. V., Klad'ko, V. P., Konakova, R. V., Kudryk, Ya. Ya, Panteleev, V. N., Sheremet, V. N.
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Ge-on-GaAs film resistance thermometers for cryogenic applications
Mitin, V.F., McDonald, P.C., Pavese, F., Boltovets, N.S., Kholevchuk, V.V., Nemish, I.Yu, Basanets, V.V., Dugaev, V.K., Sorokin, P.V., Konakova, R.V., Venger, E.F., Mitin, E.V.
Published in Cryogenics (Guildford) (01.09.2007)
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Nanomechanical properties of pure and doped Ta2O5 and the effect of microwave irradiation
Atanassova, E, Lytvyn, P, Dub, S N, Konakova, R V, Mitin, V F, Spassov, D
Published in Journal of physics. D, Applied physics (28.11.2012)
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On a New Mechanism for the Realization of Ohmic Contacts
Sachenko, A. V., Belyaev, A. E., Konakova, R. V.
Published in Semiconductors (Woodbury, N.Y.) (2018)
Published in Semiconductors (Woodbury, N.Y.) (2018)
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Mechanism of contact resistance formation in ohmic contacts with high dislocation density
Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Konakova, R. V., Kudryk, Ya Ya, Novitskii, S. V., Sheremet, V. N., Li, J., Vitusevich, S. A.
Published in Journal of applied physics (15.04.2012)
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Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n+–n-Si Diffusion Silicon Structures
Belyaev, A. E., Boltovets, N. S., Klad’ko, V. P., Safryuk-Romanenko, N. V., Lubchenko, A. I., Sheremet, V. N., Shynkarenko, V. V., Slepova, A. S., Pilipenko, V. A., Petlitskaya, T. V., Pilipchuk, A. S., Konakova, R. V., Sachenko, A. V.
Published in Semiconductors (Woodbury, N.Y.) (01.04.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.04.2019)
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Features of temperature dependence of contact resistivity in ohmic contacts on lapped n- Si
Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Vinogradov, A. O., Kladko, V. P., Konakova, R. V., Kudryk, Ya. Ya, Kuchuk, A. V., Sheremet, V. N., Vitusevich, S. A.
Published in Journal of applied physics (15.09.2012)
Published in Journal of applied physics (15.09.2012)
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Field emission properties of pointed cathodes based on graphene films on SiC
Konakova, R. V., Okhrimenko, O. B., Kolomys, A. F., Strel’chuk, V. V., Svetlichnyi, A. M., Ageev, O. A., Volkov, E. Yu, Kolomiitsev, A. S., Zhityaev, I. L., Spiridonov, O. B.
Published in Journal of superhard materials (01.07.2016)
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Ge-film resistance and Si-based diode temperature microsensors for cryogenic applications
Boltovets, N.S., Kholevchuk, V.V., Konakova, R.V., Mitin, V.F., Venger, E.F.
Published in Sensors and actuators. A, Physical (01.08.2001)
Published in Sensors and actuators. A, Physical (01.08.2001)
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Effect of Microwave Radiation on the Band Structure and Electronic Parameters of the Heterosystems with Fullerenes
Matveeva, L.O., Venger, E.F., Konakova, R.V., Kolyadina, O.Yu, Neluba, P.L., Shynkarenko, V.V.
Published in Fìzika ì hìmìâ tverdogo tìla (Online) (01.01.2018)
Published in Fìzika ì hìmìâ tverdogo tìla (Online) (01.01.2018)
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Effect of por-SiC buffer layer on the parameters of thin Er2O3 layers on silicon carbide substrates
Bacherikov, Yu Yu, Konakova, R V, Okhrimenko, O B, Berezovska, N I, Kapitanchuk, L M, Svetlichnyi, A M, Svetlichnaya, L A
Published in IOP conference series. Materials Science and Engineering (23.04.2015)
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Microwave irradiation impact on Ta2O5 stack capacitors with different gates
Atanassova, E, Mitin, V F, Konakova, R V, Spassov, D, Schinkarenko, V V
Published in Semiconductor science and technology (01.03.2008)
Published in Semiconductor science and technology (01.03.2008)
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The mechanism of contact-resistance formation on lapped n-Si surfaces
Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Vinogradov, A. O., Kapitanchuk, L. M., Konakova, R. V., Kostylyov, V. P., Kudryk, Ya. Ya, Kladko, V. P., Sheremet, V. N.
Published in Semiconductors (Woodbury, N.Y.) (01.03.2013)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2013)
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Resonant tunnelling effect in delta doped p-n GaAs junction
Vitusevich, S.A., Förster, A., Belyaev, A.E., Indlekofer, K.M., Lüth, H., Konakova, R.V.
Published in Microelectronic engineering (1999)
Published in Microelectronic engineering (1999)
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Features of transformation of impurity-defect complexes in СdTe:Сl under the influence of microwave radiation
Budzulyak, S. I., Korbutyak, D. V., Lots'ko, A. P., Vakhnyak, N. D., Kalitchuk, S. M., Demchina, L. A., Konakova, R. V., Shinkarenko, V. V., Mel'nichuk, A. V.
Published in Tekhnologii͡a︡ i konstruirovanie v ėlektronnoĭ apparature (01.08.2014)
Published in Tekhnologii͡a︡ i konstruirovanie v ėlektronnoĭ apparature (01.08.2014)
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Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride
Belyaev, A. E., Boltovets, N. S., Ivanov, V. N., Klad’ko, V. P., Konakova, R. V., Kudrik, Ya. Ya, Kuchuk, A. V., Milenin, V. V., Sveshnikov, Yu. N., Sheremet, V. N.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2008)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2008)
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