Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system
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Metal-induced gap states at well defined alkali-halide/metal interfaces
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New epitaxial growth method for modulated structures using Van der Waals interactions
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Heteroepitaxial growth of layered semiconductor GaSe on a hydrogen-terminated Si(111) surface
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Published in Japanese Journal of Applied Physics (01.03.1993)
Published in Japanese Journal of Applied Physics (01.03.1993)
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Published in Surface science (20.10.2003)
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Atomic and electronic structure of CsBr film grown on LiF and KBr( [formula omitted])
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Published in Surface science (01.01.2003)
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Investigation of the growth mechanism of an InSe epitaxial layer on a MoS2 substrate
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Published in Journal of crystal growth (01.10.2000)
Published in Journal of crystal growth (01.10.2000)
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Scanning Tunneling Microscopy and Spectroscopy Study of LiBr/Si(001) Heterostructure
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Published in Japanese Journal of Applied Physics (01.02.2004)
Published in Japanese Journal of Applied Physics (01.02.2004)
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Characterization of epitaxial films of layered materials using Moiré images of scanning tunneling microscope
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Nanostructure fabrication using selective growth on nanosize patterns drawn by a scanning probe microscope
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Investigation of the growth mechanism of layered semiconductor GaSe
Ueno, Keiji, Takeda, Natsuko, Sasaki, Kentaro, Koma, Atsushi
Published in Applied surface science (01.04.1997)
Published in Applied surface science (01.04.1997)
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