Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: I—High-resolution x-ray diffraction and x-ray topography
Faleev, N., Sustersic, N., Bhargava, N., Kolodzey, J., Kazimirov, A.Yu, Honsberg, C.
Published in Journal of crystal growth (15.02.2013)
Published in Journal of crystal growth (15.02.2013)
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Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: II—Transmission electron microscopy and atomic force microscopy
Faleev, N., Sustersic, N., Bhargava, N., Kolodzey, J., Magonov, S., Smith, D.J., Honsberg, C.
Published in Journal of crystal growth (15.02.2013)
Published in Journal of crystal growth (15.02.2013)
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Tunnel barrier enhanced voltage signal generated by magnetization precession of a single ferromagnetic layer
Moriyama, T, Cao, R, Fan, X, Xuan, G, Nikolić, B K, Tserkovnyak, Y, Kolodzey, J, Xiao, John Q
Published in Physical review letters (15.02.2008)
Published in Physical review letters (15.02.2008)
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Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon
Kolodzey, J., Chowdhury, E.A., Adam, T.N., Guohua Qui, Rau, I., Olowolafe, J.O., Suehle, J.S., Yuan Chen
Published in IEEE transactions on electron devices (01.01.2000)
Published in IEEE transactions on electron devices (01.01.2000)
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Journal Article
The electrical properties of MIS capacitors with ALN gate dielectrics
Adam, T, Kolodzey, J, Swann, C.P, Tsao, M.W, Rabolt, J.F
Published in Applied surface science (15.05.2001)
Published in Applied surface science (15.05.2001)
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Journal Article
Silicon Carbide Terahertz Emitting Devices
Xuan, G., Lv, P.-C., Zhang, X., Kolodzey, J., DeSalvo, G., Powell, A.
Published in Journal of electronic materials (01.05.2008)
Published in Journal of electronic materials (01.05.2008)
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Journal Article
High detectivity dilute nitride strained layer superlattice detectors for LWIR and VLWIR applications
Aina, Leye, Hier, Harry, Fathimulla, Ayub, Lecates, Mark, Kolodzey, J., Goossen, Keith, Coppinger, Matthew, Bhargava, Nurpur
Published in Infrared physics & technology (01.11.2009)
Published in Infrared physics & technology (01.11.2009)
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Conference Proceeding
Characteristics of THz waves and carrier scattering in boron-doped epitaxial Si and Si1−xGex films
Ray, S. K., Adam, T. N., Troeger, R. T., Kolodzey, J., Looney, G., Rosen, A.
Published in Journal of applied physics (15.05.2004)
Published in Journal of applied physics (15.05.2004)
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Journal Article
Spin-Polarized Transport and Dynamics in Magnetic Tunneling Structures
Cao, R., Moriyama, T., Wang, W.G., Fan, X., Kolodzey, J., Chen, S.H., Chang, C.R., Tserkovnyak, Y., Nikolic, B.K., Xiao, J.Q.
Published in IEEE transactions on magnetics (01.10.2009)
Published in IEEE transactions on magnetics (01.10.2009)
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Conference Proceeding
Thermal conductivity reduction in GaAs-AlAs distributed Bragg reflectors
Piprek, J., Troger, T., Schroter, B., Kolodzey, J., Ih, C.S.
Published in IEEE photonics technology letters (01.01.1998)
Published in IEEE photonics technology letters (01.01.1998)
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Journal Article
Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing
Dashiell, M.W., Troeger, R.T., Rommel, S.L., Adam, T.N., Berger, P.R., Guedj, C., Kolodzey, J., Seabaugh, A.C., Lake, R.
Published in IEEE transactions on electron devices (01.09.2000)
Published in IEEE transactions on electron devices (01.09.2000)
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Journal Article
Hot hole redistribution in impurity states of boron-doped silicon terahertz emitters
Lv, P.-C., Troeger, R. T., Zhang, X., Adam, T. N., Kolodzey, J., Odnoblyudov, M. A., Yassievich, I. N.
Published in Journal of applied physics (01.11.2005)
Published in Journal of applied physics (01.11.2005)
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Journal Article
Carrier injection as a cause of THz lasing excitation in SiGe/Si QW structures
Kagan, M. S., Altukhov, I. V., Sinis, V. P., Paprotskiy, S. K., Yassievich, I. N., Kolodzey, J.
Published in Physica Status Solidi (b) (01.01.2007)
Published in Physica Status Solidi (b) (01.01.2007)
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Papers from the 3rd International SiGe Technology and Device Meeting (Princeton, New Jersey, USA, 15–17 May 2006) (ISTDM 2006)
Sturm, J, Fitzgerald, E, Koester, S, Kolodzey, J, Murota, J, Paul, D, Tillack, B, Zaima, S, Ghyselen, B, Takagi, S
Published in Semiconductor science and technology (01.01.2007)
Published in Semiconductor science and technology (01.01.2007)
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Journal Article
Precipitation of β-SiC in Si1−yCy alloys
Guedj, C., Dashiell, M. W., Kulik, L., Kolodzey, J., Hairie, A.
Published in Journal of applied physics (15.10.1998)
Published in Journal of applied physics (15.10.1998)
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Journal Article
Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy
Dashiell, M.W., Kolodzey, J., Crozat, P., Aniel, F., Lourtioz, J.M.
Published in IEEE electron device letters (01.06.2002)
Published in IEEE electron device letters (01.06.2002)
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Journal Article
The electrical characteristics of silicon carbide alloyed with germanium
Katulka, G, Roe, K, Kolodzey, J, Eldridge, G, Clarke, R.C, Swann, C.P, Wilson, R.G
Published in Applied surface science (15.05.2001)
Published in Applied surface science (15.05.2001)
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Journal Article
THz lasing of SiGe/Si quantum-well structures due to shallow acceptors
Kagan, M. S., Altukhov, I. V., Chirkova, E. G., Sinis, V. P., Troeger, R. T., Ray, S. K., Kolodzey, J.
Published in physica status solidi (b) (01.01.2003)
Published in physica status solidi (b) (01.01.2003)
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Capacitance study of selectively doped SiGe/Si heterostructures
Antonova, I V, Obodnikov, V I, Kagan, M S, Troeger, R T, Ray, S K, Kolodzey, J
Published in Semiconductor science and technology (01.05.2005)
Published in Semiconductor science and technology (01.05.2005)
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