Reliability of AlGaN/GaN HEMT: Impact of acceleration condition on dominant degradation mechanism
Rozman, D., Knafo, Y., Baksht, T., Aktushev, O., Kolatker, G., Moskovitch, S., Bunin, G.
Published in 2009 Reliability of Compound Semiconductors Digest (ROCS) (01.10.2009)
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Published in 2009 Reliability of Compound Semiconductors Digest (ROCS) (01.10.2009)
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