N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance
Koksaldi, Onur S., Haller, Jeffrey, Li, Haoran, Romanczyk, Brian, Guidry, Matthew, Wienecke, Steven, Keller, Stacia, Mishra, Umesh K.
Published in IEEE electron device letters (01.07.2018)
Published in IEEE electron device letters (01.07.2018)
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Journal Article
High-electron-mobility transistors with metal-organic chemical vapor deposition-regrown contacts for high voltage applications
Koksaldi, Onur S, Romanczyk, Brian, Haller, Jeffrey, Guidry, Matthew, Li, Haoran, Keller, Stacia, Mishra, Umesh K
Published in Semiconductor science and technology (01.12.2020)
Published in Semiconductor science and technology (01.12.2020)
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Journal Article
MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature
Zhang, Yuewei, Alema, Fikadu, Mauze, Akhil, Koksaldi, Onur S., Miller, Ross, Osinsky, Andrei, Speck, James S.
Published in APL materials (01.02.2019)
Published in APL materials (01.02.2019)
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Journal Article
Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy
Hestroffer, Karine, Lund, Cory, Koksaldi, Onur, Li, Haoran, Schmidt, Gordon, Trippel, Max, Veit, Peter, Bertram, Frank, Lu, Ning, Wang, Qingxiao, Christen, Jürgen, Kim, Moon J., Mishra, Umesh K., Keller, Stacia
Published in Journal of crystal growth (01.05.2017)
Published in Journal of crystal growth (01.05.2017)
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Journal Article
Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices
Chan, Silvia H., Tahhan, Maher, Liu, Xiang, Bisi, Davide, Gupta, Chirag, Koksaldi, Onur, Li, Haoran, Mates, Tom, DenBaars, Steven P., Keller, Stacia, Mishra, Umesh K.
Published in Japanese Journal of Applied Physics (01.02.2016)
Published in Japanese Journal of Applied Physics (01.02.2016)
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Journal Article
Quality and reliability of in-situ Al2O3 MOS capacitors for GaN-based power devices
Bisi, Davide, Chan, Silvia H., Tahhan, Maher, Koksaldi, Onur S., Keller, Stacia, Meneghini, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico, Mishra, Umesh K.
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
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Conference Proceeding
Journal Article
Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
Ahmadi, Elaheh, Koksaldi, Onur S., Kaun, Stephen W., Oshima, Yuichi, Short, Dane B., Mishra, Umesh K., Speck, James S.
Published in Applied physics express (01.04.2017)
Published in Applied physics express (01.04.2017)
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Journal Article
Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy
Ahmadi, Elaheh, Koksaldi, Onur S., Zheng, Xun, Mates, Tom, Oshima, Yuichi, Mishra, Umesh K., Speck, James S.
Published in Applied physics express (01.07.2017)
Published in Applied physics express (01.07.2017)
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Journal Article
AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment
Krishna, Athith, Raj, Aditya, Hatui, Nirupam, Koksaldi, Onur, Jang, Raina, Keller, Stacia, Mishra, Umesh K.
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
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Journal Article
First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE
Pasayat, Shubhra S, Ahmadi, Elaheh, Romanczyk, Brian, Koksaldi, Onur, Agarwal, Anchal, Guidry, Matthew, Gupta, Chirag, Wurm, Christian, Keller, Stacia, Mishra, Umesh K
Published in Semiconductor science and technology (01.04.2019)
Published in Semiconductor science and technology (01.04.2019)
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Journal Article
Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels
Gupta, Chirag, Chan, Silvia H., Lund, Cory, Agarwal, Anchal, Koksaldi, Onur S., Liu, Junquian, Enatsu, Yuuki, Keller, Stacia, Mishra, Umesh K.
Published in Applied physics express (01.12.2016)
Published in Applied physics express (01.12.2016)
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Journal Article
Demonstration of β-(Al x Ga 1− x ) 2 O 3 /β-Ga 2 O 3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy
Ahmadi, Elaheh, Koksaldi, Onur S., Zheng, Xun, Mates, Tom, Oshima, Yuichi, Mishra, Umesh K., Speck, James S.
Published in Applied physics express (01.07.2017)
Published in Applied physics express (01.07.2017)
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Journal Article
Ge doping of β-Ga 2 O 3 films grown by plasma-assisted molecular beam epitaxy
Ahmadi, Elaheh, Koksaldi, Onur S., Kaun, Stephen W., Oshima, Yuichi, Short, Dane B., Mishra, Umesh K., Speck, James S.
Published in Applied physics express (01.04.2017)
Published in Applied physics express (01.04.2017)
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Journal Article
1 kV field plated in-situ oxide, GaN interlayer based vertical trench MOSFET (OG-FET)
Gupta, Chirag, Agarwal, Anchal, Chan, Silvia H., Koksaldi, Onur S., Keller, Stacia, Mishra, Umesh K.
Published in 2017 75th Annual Device Research Conference (DRC) (01.06.2017)
Published in 2017 75th Annual Device Research Conference (DRC) (01.06.2017)
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Conference Proceeding
AlGaN /GaN superlattice based p-channel field effect transistor (pFET) with TMAH treatment
Athith Krishna, Raj, Aditya, Hatui, Nirupam, Koksaldi, Onur, Jang, Raina, Keller, Stacia, Mishra, Umesh
Published in arXiv.org (25.08.2019)
Published in arXiv.org (25.08.2019)
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Paper
Journal Article