Low-dislocation-density 4H-SiC crystal growth utilizing dislocation conversion during solution method
Yamamoto, Yuji, Harada, Shunta, Seki, Kazuaki, Horio, Atsushi, Mitsuhashi, Takato, Koike, Daiki, Tagawa, Miho, Ujihara, Toru
Published in Applied physics express (01.06.2014)
Published in Applied physics express (01.06.2014)
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Journal Article
Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-Axis Seeds
Koike, Daiki, Harada, S., Ujihara, Toru, Umezaki, Tomonori
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
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Journal Article
Dislocation Conversion During SiC Solution Growth for High-Quality Crystals
Koike, Daiki, Aoyagi, Kenta, Harada, S., Tagawa, M., Sakai, Takenobu, Mutoh, Takuya, Xiao, S., Murayama, Kenta, Ujihara, Toru, Yamamoto, Yuji
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
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Journal Article
Control of Interface Shape by Non-Axisymmetric Solution Convection in Top-Seeded Solution Growth of SiC Crystal
Koike, Daiki, Aoyagi, Kenta, Harada, S., Tagawa, M., Sakai, Takenobu, Murayama, Kenta, Ujihara, Toru, Umezaki, Tomonori
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
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Journal Article
Polytype control by activity ratio of silicon to carbon during SiC solution growth using multicomponent solvents
Horio, Atsushi, Harada, Shunta, Koike, Daiki, Murayama, Kenta, Aoyagi, Kenta, Sakai, Takenobu, Tagawa, Miho, Ujihara, Toru
Published in Japanese Journal of Applied Physics (01.01.2016)
Published in Japanese Journal of Applied Physics (01.01.2016)
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Analysis of the carbon transport near the growth interface with respect to the rotational speed of the seed crystal during top-seeded solution growth of SiC
Umezaki, Tomonori, Koike, Daiki, Harada, Shunta, Ujihara, Toru
Published in Japanese Journal of Applied Physics (01.12.2016)
Published in Japanese Journal of Applied Physics (01.12.2016)
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