InP-based compact transversal filter for monolithically integrated light source array
Ueda, Yuta, Fujisawa, Takeshi, Takahata, Kiyoto, Kohtoku, Masaki, Ishii, Hiroyuki
Published in Optics express (07.04.2014)
Published in Optics express (07.04.2014)
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Journal Article
Planar n-SI-n heterostructure athermal InP (110) optical modulator
Ogiso, Yoshihiro, Nakanishi, Yasuhiko, Kanazawa, Shigeru, Yamada, Eiichi, Tanobe, Hiromasa, Arai, Masakazu, Shibata, Yasuo, Kohtoku, Masaki
Published in Optics express (20.10.2014)
Published in Optics express (20.10.2014)
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Journal Article
Impact of strained GaAs spacer between InP emitter and GaAs1−ySby base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs1−ySby/InP DHBTs
Hoshi, Takuya, Kashio, Norihide, Sugiyama, Hiroki, Yokoyama, Haruki, Kurishima, Kenji, Ida, Minoru, Matsuzaki, Hideaki, Kohtoku, Masaki
Published in Journal of crystal growth (01.06.2014)
Published in Journal of crystal growth (01.06.2014)
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Journal Article
Ultralow Power Consumption Silica-Based PLC-VOA/Switches
Watanabe, K., Hashizume, Y., Nasu, Y., Kohtoku, M., Itoh, M., Inoue, Y.
Published in Journal of lightwave technology (01.07.2008)
Published in Journal of lightwave technology (01.07.2008)
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Journal Article
Low-Loss Cascaded Mach-Zehnder Multiplexer Integrated 25\hbox/\times 4\hbox EADFB Laser Array for Future CFP4 100 GbE Transmitter
Fujisawa, Takeshi, Kanazawa, Shigeru, Ueda, Yuta, Kobayashi, Wataru, Takahata, Kiyoto, Ohki, Akira, Ito, Toshio, Kohtoku, Masaki, Ishii, Hiroyuki
Published in IEEE journal of quantum electronics (01.12.2013)
Published in IEEE journal of quantum electronics (01.12.2013)
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Journal Article
Over 67 GHz Bandwidth and 1.5 V Vπ InP-Based Optical IQ Modulator With n-i-p-n Heterostructure
Ogiso, Yoshihiro, Ozaki, Josuke, Ueda, Yuta, Kashio, Norihide, Kikuchi, Nobuhiro, Yamada, Eiichi, Tanobe, Hiromasa, Kanazawa, Shigeru, Yamazaki, Hiroshi, Ohiso, Yoshitaka, Fujii, Takuro, Kohtoku, Masaki
Published in Journal of lightwave technology (15.04.2017)
Published in Journal of lightwave technology (15.04.2017)
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Journal Article
50-Gb/s Direct Modulation of a 1.3-μm InGaAlAs-Based DFB Laser With a Ridge Waveguide Structure
Kobayashi, W., Ito, T., Yamanaka, T., Fujisawa, T., Shibata, Y., Kurosaki, T., Kohtoku, M., Tadokoro, T., Sanjoh, H.
Published in IEEE journal of selected topics in quantum electronics (01.07.2013)
Published in IEEE journal of selected topics in quantum electronics (01.07.2013)
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Journal Article
Compact semiconductor optical amplifier with U-turn shape deep-ridge passive waveguide for Si photonic circuits
Yoshida, Masahiro, Maruyama, Kazuomi, Kiyota, Kazuaki, Kohtoku, Masaki
Published in 2021 27th International Semiconductor Laser Conference (ISLC) (10.10.2021)
Published in 2021 27th International Semiconductor Laser Conference (ISLC) (10.10.2021)
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Conference Proceeding
Low Driving Voltage Operation of MZI-Type EA Modulator Integrated With DFB Laser Using Optical Absorption and Interferometric Extinction
Ueda, Yuta, Fujisawa, Takeshi, Kanazawa, Shigeru, Kobayashi, Wataru, Takahata, Kiyoto, Sanjoh, Hiroaki, Ishii, Hiroyuki, Kohtoku, Masaki
Published in IEEE journal of selected topics in quantum electronics (01.11.2015)
Published in IEEE journal of selected topics in quantum electronics (01.11.2015)
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Journal Article
32ch Reconfigurable Optical Add Multiplexer Using Technique for Stacked Integration of Chip-Scale-Package PDs on Silica-Based PLC
Ogawa, Ikuo, Yamazaki, Hiroshi, Hashizume, Yasuaki, Abe, Makoto, Yanagisawa, Masahiro, Shibata, Tomohiro, Kohtoku, Masaki, Kamei, Shin, Kaneko, Akimasa
Published in 2006 European Conference on Optical Communications (01.09.2006)
Published in 2006 European Conference on Optical Communications (01.09.2006)
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Conference Proceeding
MOCVD-grown compressively strained C-doped InxGa1−xAs1−ySby with high-In/Sb content for very low turn-on-voltage InP-based DHBTs
Hoshi, Takuya, Kashio, Norihide, Sugiyama, Hiroki, Yokoyama, Haruki, Kurishima, Kenji, Ida, Minoru, Matsuzaki, Hideaki, Kohtoku, Masaki, Gotoh, Hideki
Published in Journal of crystal growth (15.10.2014)
Published in Journal of crystal growth (15.10.2014)
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Journal Article
Corrigendum to “MOCVD-grown compressively strained C-doped InxGa1−xAs1−ySby with high-In/Sb content for very low turn-on-voltage InP-based DHBTs” [J. Cryst. Growth 404 (2014) 172–176]
Hoshi, Takuya, Kashio, Norihide, Sugiyama, Hiroki, Yokoyama, Haruki, Kurishima, Kenji, Ida, Minoru, Matsuzaki, Hideaki, Kohtoku, Masaki, Gotoh, Hideki
Published in Journal of crystal growth (15.08.2015)
Published in Journal of crystal growth (15.08.2015)
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Journal Article
Corrigendum to “MOCVD-grown compressively strained C-doped In Ga1−As1−Sb with high-In/Sb content for very low turn-on-voltage InP-based DHBTs” [J. Cryst. Growth 404 (2014) 172–176]
Hoshi, Takuya, Kashio, Norihide, Sugiyama, Hiroki, Yokoyama, Haruki, Kurishima, Kenji, Ida, Minoru, Matsuzaki, Hideaki, Kohtoku, Masaki, Gotoh, Hideki
Published in Journal of crystal growth (01.08.2015)
Published in Journal of crystal growth (01.08.2015)
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Journal Article
Impact of strained GaAs spacer between InP emitter and GaAs super(1-y)Sb sub(y) base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs sub(1-y)Sb sub(y)/InP DHBTs
Hoshi, Takuya, Kashio, Norihide, Sugiyama, Hiroki, Yokoyama, Haruki, Kurishima, Kenji, Ida, Minoru, Matsuzaki, Hideaki, Kohtoku, Masaki
Published in Journal of crystal growth (01.06.2014)
Published in Journal of crystal growth (01.06.2014)
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Journal Article
MOCVD-grown compressively strained C-doped In sub(x)Ga sub(1-x)As sub(1-y)Sb sub(y) with high-In/Sb content for very low turn-on-voltage InP-based DHBTs
Hoshi, Takuya, Kashio, Norihide, Sugiyama, Hiroki, Yokoyama, Haruki, Kurishima, Kenji, Ida, Minoru, Matsuzaki, Hideaki, Kohtoku, Masaki, Gotoh, Hideki
Published in Journal of crystal growth (15.10.2014)
Published in Journal of crystal growth (15.10.2014)
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Journal Article