Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
Endoh, Akira, Yamashita, Yoshimi, Ikeda, Keiji, Higashiwaki, Masataka, Hikosaka, Kohki, Matsui, Toshiaki, Hiyamizu, Satoshi, Mimura, Takashi
Published in Japanese Journal of Applied Physics (01.04.2004)
Published in Japanese Journal of Applied Physics (01.04.2004)
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Journal Article
Effect of Gate--Drain Spacing for In0.52Al0.48As/In0.53Ga0.47As High Electron Mobility Transistors Studied by Monte Carlo Simulations
Endoh, Akira, Shinohara, Keisuke, Awano, Yuji, Hikosaka, Kohki, Matsui, Toshiaki, Mimura, Takashi
Published in Jpn J Appl Phys (01.01.2010)
Published in Jpn J Appl Phys (01.01.2010)
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Journal Article
Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency
Shinohara, Keisuke, Yamashita, Yoshimi, Endoh, Akira, Hikosaka, Kohki, Matsui, Toshiaki, Mimura, Takashi, Hiyamizu, Satoshi
Published in Japanese Journal of Applied Physics (15.04.2002)
Published in Japanese Journal of Applied Physics (15.04.2002)
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Journal Article
Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors
Endoh, Akira, Yamashita, Yoshimi, Shinohara, Keisuke, Higashiwaki, Masataka, Hikosaka, Kohki, Mimura, Takashi, Hiyamizu, Satoshi, Matsui, Toshiaki
Published in Japanese Journal of Applied Physics (2002)
Published in Japanese Journal of Applied Physics (2002)
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Journal Article
DC and RF Performance of 50 nm Gate Pseudomorphic In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy
Masataka Higashiwaki, Masataka Higashiwaki, Takahiro Kitada, Takahiro Kitada, Toyohiro Aoki, Toyohiro Aoki, Satoshi Shimomura, Satoshi Shimomura, Yoshimi Yamashita, Yoshimi Yamashita, Akira Endoh, Akira Endoh, Kohki Hikosaka, Kohki Hikosaka, Takashi Mimura, Takashi Mimura, Toshiaki Matsui, Toshiaki Matsui, Satoshi Hiyamizu, Satoshi Hiyamizu
Published in Japanese Journal of Applied Physics (01.07.2000)
Published in Japanese Journal of Applied Physics (01.07.2000)
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Journal Article
Fabrication of sub-50-nm-gate i-AlGaN/GaN HEMTs on sapphire
Endoh, Akira, Yamashita, Yoshimi, Ikeda, Keiji, Higashiwaki, Masataka, Hikosaka, Kohki, Matsui, Toshiaki, Hiyamizu, Satoshi, Mimura1, Takashi
Published in Physica status solidi. C (01.12.2003)
Published in Physica status solidi. C (01.12.2003)
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Journal Article
Realization of highly resistive GaAs/Si interface and improvement of RF performance for high electron-mobility transistors grown on Si substrates
MIYAGAKI, S, HARA, N, HARADA, N, ESHITA, T, HIKOSAKA, K, TANAKA, H
Published in Japanese Journal of Applied Physics (01.04.1997)
Published in Japanese Journal of Applied Physics (01.04.1997)
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Journal Article
Ultra-High-Speed Low-Noise InP-HEMT Technology
Shinohara, K., Chen, P.S., Bergman, J., Kazemi, H., Brar, B., Watanabe, I., Matsui, T., Yamashita, Y., Endoh, A., Hikosaka, K., Mimura, T., Hiyamizu, S.
Published in 2006 IEEE MTT-S International Microwave Symposium Digest (01.01.2006)
Published in 2006 IEEE MTT-S International Microwave Symposium Digest (01.01.2006)
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Conference Proceeding
Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs with an ultrahigh fT of 562 GHz
Yamashita, Y, Endoh, A, Shinohara, K, Hikosaka, K, Matsui, T, Hiyamizu, S, Mimura, T
Published in IEEE electron device letters (01.10.2002)
Published in IEEE electron device letters (01.10.2002)
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Journal Article
DC AND RF PERFORMANCE OF 50 nm GATE PSEUDOMORPHIC In0.7Ga0.3As/In0.52Al0.48As HIGH ELECTRON MOBILITY TRANSISTORS GROWN ON (411)A-ORIENTED InP SUBSTRATES BY MOLECULAR-BEAM EPITAXY
Higashiwaki, M, Kitada, T, Aoki, T, Shimomura, S, Yamashita, Y, Endoh, A
Published in Jpn.J.Appl.Phys ,Part 2. Vol. 39, no. 7B, pp. L720-L722. 2000 (2000)
Published in Jpn.J.Appl.Phys ,Part 2. Vol. 39, no. 7B, pp. L720-L722. 2000 (2000)
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Journal Article
Selective Dry Etching of AlGaAs-GaAs Heterojunction
Hikosaka, Kohki, Mimura, Takashi, Joshin, Kazukiyo
Published in Japanese Journal of Applied Physics (01.01.1981)
Published in Japanese Journal of Applied Physics (01.01.1981)
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Journal Article
Monte Carlo Simulations of Electron Transport in In0.52Al0.48As/In0.75Ga0.25As High Electron Mobility Transistors at 300 and 16 K
Endoh, Akira, Watanabe, Issei, Shinohara, Keisuke, Awano, Yuji, Hikosaka, Kohki, Matsui, Toshiaki, Hiyamizu, Satoshi, Mimura, Takashi
Published in Jpn J Appl Phys (25.11.2010)
Published in Jpn J Appl Phys (25.11.2010)
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Journal Article
Monte Carlo Simulations of Electron Transport in In 0.52 Al 0.48 As/In 0.75 Ga 0.25 As High Electron Mobility Transistors at 300 and 16 K
Endoh, Akira, Watanabe, Issei, Shinohara, Keisuke, Awano, Yuji, Hikosaka, Kohki, Matsui, Toshiaki, Hiyamizu, Satoshi, Mimura, Takashi
Published in Japanese Journal of Applied Physics (01.11.2010)
Published in Japanese Journal of Applied Physics (01.11.2010)
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Journal Article
Effect of Gate–Drain Spacing for In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As High Electron Mobility Transistors Studied by Monte Carlo Simulations
Endoh, Akira, Shinohara, Keisuke, Awano, Yuji, Hikosaka, Kohki, Matsui, Toshiaki, Mimura, Takashi
Published in Japanese Journal of Applied Physics (01.01.2010)
Published in Japanese Journal of Applied Physics (01.01.2010)
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Journal Article
High Electron Mobility Transistor Logic
Mimura, Takashi, Joshin, Kazukiyo, Hiyamizu, Satoshi, Hikosaka, Kohki, Abe, Masayuki
Published in Japanese Journal of Applied Physics (01.01.1981)
Published in Japanese Journal of Applied Physics (01.01.1981)
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Journal Article
Enhancement-Mode High Electron Mobility Transistors for Logic Applications
Mimura, Takashi, Hiyamizu, Satoshi, Joshin, Kazukiyo, Hikosaka, Kohki
Published in Japanese Journal of Applied Physics (01.01.1981)
Published in Japanese Journal of Applied Physics (01.01.1981)
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Journal Article