Search Results - "Koehler, Andrew" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

by Yuhao Zhang, Zhihong Liu, Tadjer, Marko J., Min Sun, Piedra, Daniel, Hatem, Christopher, Anderson, Travis J., Luna, Lunet E., Nath, Anindya, Koehler, Andrew D., Okumura, Hironori, Jie Hu, Xu Zhang, Xiang Gao, Feigelson, Boris N., Hobart, Karl D., Palacios, Tomas
Published in IEEE electron device letters (01.08.2017)

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Journal Article

GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging

GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging

by Tadjer, Marko J., Anderson, Travis J., Ancona, Mario G., Raad, Peter E., Komarov, Pavel, Bai, Tingyu, Gallagher, James C., Koehler, Andrew D., Goorsky, Mark S., Francis, Daniel A., Hobart, Karl D., Kub, Fritz J.
Published in IEEE electron device letters (01.06.2019)

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Journal Article

Hybrid Edge Termination in Vertical GaN: Approximating Beveled Edge Termination via Discrete Implantations

Hybrid Edge Termination in Vertical GaN: Approximating Beveled Edge Termination via Discrete Implantations

by Nelson, Tolen, Pandey, Prakash, Georgiev, Daniel G., Hontz, Michael R., Koehler, Andrew D., Hobart, Karl D., Anderson, Travis J., Ildefonso, Adrian, Khanna, Raghav
Published in IEEE transactions on electron devices (01.12.2022)

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Journal Article

Examination of Trapping Effects on Single-Event Transients in GaN HEMTs

Examination of Trapping Effects on Single-Event Transients in GaN HEMTs

by Nelson, Tolen, Georgiev, Daniel G., Hontz, Michael R., Khanna, Raghav, Ildefonso, Adrian, Koehler, Andrew D., Hobart, Karl, Khachatrian, Ani, McMorrow, Dale
Published in IEEE transactions on nuclear science (01.04.2023)

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Journal Article

PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates

PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates

by Spencer, Joseph A., Jacobs, Alan G., Hobart, Karl D., Koehler, Andrew D., Anderson, Travis J., Zhang, Yuhao, Tadjer, Marko J.
Published in Journal of electronic materials (01.06.2024)

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Journal Article

Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation

Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation

by Anderson, Travis J., Koehler, Andrew D., Greenlee, Jordan D., Weaver, Bradley D., Mastro, Michael A., Hite, Jennifer K., Eddy, Charles R., Kub, Francis J., Hobart, Karl D.
Published in IEEE electron device letters (01.08.2014)

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Journal Article

Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance

Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance

by Pandey, Prakash, Nelson, Tolen M., Hontz, Michael R., Georgiev, Daniel G., Khanna, Raghav, Jacobs, Alan G., Lundh, James S., Gallagher, James C., Koehler, Andrew D., Hobart, Karl D., Anderson, Travis J.
Published in IEEE transactions on electron devices (01.06.2024)

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Journal Article

A Simple Edge Termination Design for Vertical GaN P-N Diodes

A Simple Edge Termination Design for Vertical GaN P-N Diodes

by Pandey, Prakash, Nelson, Tolen M., Collings, William M., Hontz, Michael R., Georgiev, Daniel G., Koehler, Andrew D., Anderson, Travis J., Gallagher, James C., Foster, Geoffrey M., Jacobs, Alan, Ebrish, Mona A., Gunning, Brendan P., Kaplar, Robert J., Hobart, Karl D., Khanna, Raghav
Published in IEEE transactions on electron devices (01.09.2022)

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Journal Article

Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability

Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability

by Lundh, James Spencer, Jacobs, Alan G., Pandey, Prakash, Nelson, Tolen, Georgiev, Daniel G., Koehler, Andrew D., Khanna, Raghav, Tadjer, Marko J., Hobart, Karl D., Anderson, Travis J.
Published in IEEE electron device letters (01.05.2024)

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Journal Article

Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation

Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation

by Koehler, Andrew D., Nepal, Neeraj, Anderson, Travis J., Tadjer, Marko J., Hobart, Karl D., Eddy, Charles R., Kub, Francis J.
Published in IEEE electron device letters (01.09.2013)

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Journal Article

Effect of Reduced Extended Defect Density in MOCVD Grown AlGaN/GaN HEMTs on Native GaN Substrates

Effect of Reduced Extended Defect Density in MOCVD Grown AlGaN/GaN HEMTs on Native GaN Substrates

by Anderson, Travis J., Tadjer, Marko J., Hite, Jennifer K., Greenlee, Jordan D., Koehler, Andrew D., Hobart, Karl D., Kub, Fritz J.
Published in IEEE electron device letters (01.01.2016)

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Journal Article

Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates

Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates

by Tadjer, Marko J., Waltereit, Patrick, Kirste, Lutz, Müller, Stefan, Lundh, James Spencer, Jacobs, Alan G., Koehler, Andrew D., Komarov, Pavel, Raad, Peter, Gaskins, John, Hopkins, Patrick, Odnoblyudov, Vlad, Basceri, Cem, Anderson, Travis J., Hobart, Karl D.
Published in Physica status solidi. A, Applications and materials science (01.08.2023)

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Journal Article

Effect of GaN Substrate Properties on Vertical GaN PiN Diode Electrical Performance

Effect of GaN Substrate Properties on Vertical GaN PiN Diode Electrical Performance

by Gallagher, James C., Anderson, Travis J., Koehler, Andrew D., Ebrish, Mona A., Foster, Geoffrey M., Mastro, Michael A., Hite, Jennifer K., Gunning, Brendan P., Kaplar, Robert J., Hobart, Karl D., Kub, Francis J.
Published in Journal of electronic materials (01.06.2021)

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Journal Article

Impact of Surface Passivation on the Dynamic ON-Resistance of Proton-Irradiated AlGaN/GaN HEMTs

Impact of Surface Passivation on the Dynamic ON-Resistance of Proton-Irradiated AlGaN/GaN HEMTs

by Koehler, Andrew D., Anderson, Travis J., Tadjer, Marko J., Weaver, Bradley D., Greenlee, Jordan D., Shahin, David I., Hobart, Karl D., Kub, Francis J.
Published in IEEE electron device letters (01.05.2016)

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Journal Article

Vapor-phase conversion of aqueous 3-hydroxybutyric acid and crotonic acid to propylene over solid acid catalysts

Vapor-phase conversion of aqueous 3-hydroxybutyric acid and crotonic acid to propylene over solid acid catalysts

by Leow, Shijie, Koehler, Andrew J, Cronmiller, Lauren E, Huo, Xiangchen, Lahti, Gabriella D, Li, Yalin, Hafenstine, Glenn R, Vardon, Derek R, Strathmann, Timothy J
Published in Catalysis science & technology (18.10.2021)

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Journal Article

Optical Investigation of Proton‐Irradiated Metal Organic Chemical Vapor Deposition AlGaN/GaN High‐Electron‐Mobility Transistor Structures

Optical Investigation of Proton‐Irradiated Metal Organic Chemical Vapor Deposition AlGaN/GaN High‐Electron‐Mobility Transistor Structures

by Freitas, Jaime A., Weaver, Bradley D., Koehler, Andrew D., Gallagher, James C., Anderson, Travis J.
Published in physica status solidi (b) (01.04.2020)

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Journal Article

A Study on the Impact of Mid-Gap Defects on Vertical GaN Diodes

A Study on the Impact of Mid-Gap Defects on Vertical GaN Diodes

by Ebrish, Mona A., Anderson, Travis J., Koehler, Andrew D., Foster, Geoffrey M., Gallagher, James C., Kaplar, Robert J., Gunning, Brendan P., Hobart, Karl D.
Published in IEEE transactions on semiconductor manufacturing (01.11.2020)

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Journal Article

Nanocrystalline diamond capped AlGaN/GaN high electron mobility transistors via a sacrificial gate process

Nanocrystalline diamond capped AlGaN/GaN high electron mobility transistors via a sacrificial gate process

by Tadjer, Marko J., Anderson, Travis J., Feygelson, Tatyana I., Hobart, Karl D., Hite, Jennifer K., Koehler, Andrew D., Wheeler, Virginia D., Pate, Bradford B., Eddy Jr, Charles R., Kub, Fritz J.
Published in Physica status solidi. A, Applications and materials science (01.04.2016)

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Journal Article

Spatial Mapping of Pristine and Irradiated AlGaN/GaN HEMTs With UV Single-Photon Absorption Single-Event Transient Technique

Spatial Mapping of Pristine and Irradiated AlGaN/GaN HEMTs With UV Single-Photon Absorption Single-Event Transient Technique

by Khachatrian, Ani, Roche, Nicolas J-H, Buchner, Stephen P., Koehler, Andrew D., Greenlee, Jordan D., Anderson, Travis J., Warner, Jeffrey H., McMorrow, Dale
Published in IEEE transactions on nuclear science (01.08.2016)

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Journal Article

Modeling Framework to Compare High Voltage Vertical GaN PN and Merged PN-Schottky Diodes

Modeling Framework to Compare High Voltage Vertical GaN PN and Merged PN-Schottky Diodes

by Atwimah, Samuel K., Nelson, Tolen, Pandey, Prakash, Fox, Aidan P., Georgiev, Daniel G., Jacobs, Alan G., Koehler, Andrew D., Hobart, Karl D., Anderson, Travis J., Khanna, Raghav
Published in 2024 IEEE Applied Power Electronics Conference and Exposition (APEC) (25.02.2024)

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