Long range, non-destructive characterization of GaN substrates for power devices
Gallagher, J.C., Anderson, T.J., Luna, L.E., Koehler, A.D., Hite, J.K., Mahadik, N.A., Hobart, K.D., Kub, F.J.
Published in Journal of crystal growth (15.01.2019)
Published in Journal of crystal growth (15.01.2019)
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Journal Article
Effect of high temperature, high pressure annealing on GaN drift layers for vertical power devices
Anderson, T.J., Gallagher, J.C., Luna, L.E., Koehler, A.D., Jacobs, A.G., Xie, J., Beam, E., Hobart, K.D., Feigelson, B.N.
Published in Journal of crystal growth (01.10.2018)
Published in Journal of crystal growth (01.10.2018)
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Journal Article
Utilizing Low-Dose Transmission Electron Microscopy for Structure and Defect Identification in Group III - Nitride Electronic Devices
Specht, Petra, Luysberg, Martina, Chavez, J., Weatherford, T.R., Anderson, T.J., Koehler, A.D., Kisielowski, C.
Published in Microscopy and microanalysis (01.08.2018)
Published in Microscopy and microanalysis (01.08.2018)
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Journal Article