“Nanoparticle-in-Alloy” Approach to Efficient Thermoelectrics: Silicides in SiGe
Mingo, N, Hauser, D, Kobayashi, N. P, Plissonnier, M, Shakouri, A
Published in Nano letters (11.02.2009)
Published in Nano letters (11.02.2009)
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Journal Article
“Nanoparticle in Alloy” Approach to Efficient Thermoelectrics: Silicides in SiGe
Mingo, N, Hauser, D, Kobayashi, N. P, Plissonnier, M, Shakouri, A
Published in Nano letters (09.06.2010)
Published in Nano letters (09.06.2010)
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Journal Article
A 14-ps full width at half maximum high-speed photoconductor fabricated with intersecting InP nanowires on an amorphous surface
Logeeswaran, V.J., Sarkar, A., Islam, M.S., Kobayashi, N.P., Straznicky, J., Li, Xuema, Wu, Wei, Mathai, Sagi, Tan, M.R.T., Wang, Shih-Yuan, Williams, R.S.
Published in Applied physics. A, Materials science & processing (01.04.2008)
Published in Applied physics. A, Materials science & processing (01.04.2008)
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Journal Article
Structural and optical emission characteristics of InGaN thin layers and the implications for growing high-quality quantum wells by MOCVD
Kobayashi, J.T., Kobayashi, N.P., Zhang, X., Dapkus, P.D., Rich, D.H.
Published in Journal of crystal growth (01.12.1998)
Published in Journal of crystal growth (01.12.1998)
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Journal Article
Conference Proceeding
InGaN/GaN quantum well growth on pyramids of epitaxial lateral overgrown GaN
Zhang, X., Dapkus, P. D., Rich, D. H., Kim, I., Kobayashi, J. T., Kobayashi, N. P.
Published in Journal of electronic materials (01.01.2000)
Published in Journal of electronic materials (01.01.2000)
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Journal Article
Nucleation and growth behavior for GaN grown on (0001) sapphire via multistep growth approach
Kobayashi, J. T., Kobayashi, N. P., Dapkus, P. D.
Published in Journal of electronic materials (01.10.1997)
Published in Journal of electronic materials (01.10.1997)
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Journal Article
Re-entrant behavior of 2D to 3D morphology change and 3D island lateral size equalization via mass exchange in Stranski—Krastanow growth: InAs on GaAs(001)
Ramachandran, T.R., Heitz, R., Kobayashi, N.P., Kalburge, A., Yu, W., Chen, P., Madhukar, A.
Published in Journal of crystal growth (01.05.1997)
Published in Journal of crystal growth (01.05.1997)
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Journal Article
A programmable monolithic InP optical-CDMA encoder/decoder
Broeke, R.G., Cao, J., Ji, C., Du, Y., Chubun, N., Bjeletich, P., Yoo, S.J.B., Welty, R., Stephan, P.L., Reinhardt, C., Han, I.Y., Kobayashi, N.P.
Published in The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004 (2004)
Published in The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004 (2004)
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Conference Proceeding
Bottom-up sample preparation technique for interfacial characterization of vertically aligned carbon nanofibers
Ominami, Yusuke, Ngo, Quoc, Kobayashi, Nobuhiko P., Mcilwrath, Kevin, Jarausch, Konrad, Cassell, Alan M., Li, Jun, Yang, Cary Y.
Published in Ultramicroscopy (01.05.2006)
Published in Ultramicroscopy (01.05.2006)
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Journal Article
Reversible suppression of Coulomb staircase in InP nanowires with light illumination
Yamada, H, Yamada, T, Lohn, A J, Kobayashi, N P
Published in 2010 IEEE Nanotechnology Materials and Devices Conference (01.10.2010)
Published in 2010 IEEE Nanotechnology Materials and Devices Conference (01.10.2010)
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Conference Proceeding
Growth of single crystal GaN on a Si substrate using oxidized AlAs as an intermediate layer
KOBAYASHI, N. P, KOBAYASHI, J. T, CHOI, W.-J, DAPKUS, P. D, XINGANG ZHANG, RICH, D. H
Published in Journal of crystal growth (1998)
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Published in Journal of crystal growth (1998)
Conference Proceeding
Re-entrant behavior of 2D to 3D morphology change and 3D island lateral size equalization via mass exchange in Stranski-Krastanow growth : InAs on GaAs(0 0 1)
RAMACHANDRAN, T. R, HEITZ, R, KOBAYASHI, N. P, KALBURGE, A, YU, W, CHEN, P, MADHUKAR, A
Published in Journal of crystal growth (1997)
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Published in Journal of crystal growth (1997)
Conference Proceeding