Device Geometry Engineering for Controlling Organic Antiambipolar Transistor Properties
Kobashi, Kazuyoshi, Hayakawa, Ryoma, Chikyow, Toyohiro, Wakayama, Yutaka
Published in Journal of physical chemistry. C (29.03.2018)
Published in Journal of physical chemistry. C (29.03.2018)
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Journal Article
Ge incorporated epitaxy of (110) rutile TiO2 on (100) Ge single crystal at low temperature by pulsed laser deposition
Nagata, Takahiro, Kobashi, Kazuyoshi, Yamashita, Yoshiyuki, Yoshikawa, Hideki, Paulsamy, Chinnamuthu, Suzuki, Yoshihisa, Nabatame, Toshihide, Ogura, Atsushi, Chikyow, Toyohiro
Published in Thin solid films (30.09.2015)
Published in Thin solid films (30.09.2015)
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Journal Article
Bottom-electrode effect on switching behavior and interface reaction in nanoionic-based resistive changing memory
Nagata, Takahiro, Yamashita, Yoshiyuki, Yoshikawa, Hideki, Imura, Masataka, Oh, Seungjun, Kobashi, Kazuyoshi, Chikyow, Toyohiro
Published in Japanese Journal of Applied Physics (01.08.2016)
Published in Japanese Journal of Applied Physics (01.08.2016)
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Journal Article
Bias induced Cu ion migration behavior in resistive change memory structure observed by hard X-ray photoelectron spectroscopy
Nagata, Takahiro, Yamashita, Yoshiyuki, Yoshikawa, Hideki, Imura, Masataka, Oh, Seungjun, Kobashi, Kazuyoshi, Chikyow, Toyohiro
Published in Japanese Journal of Applied Physics (01.06.2015)
Published in Japanese Journal of Applied Physics (01.06.2015)
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Journal Article
Multi-Valued Logic Circuits Based on Organic Anti-ambipolar Transistors
Kobashi, Kazuyoshi, Hayakawa, Ryoma, Chikyow, Toyohiro, Wakayama, Yutaka
Published in Nano letters (11.07.2018)
Published in Nano letters (11.07.2018)
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Journal Article
Negative Differential Resistance Transistor with Organic p‐n Heterojunction
Kobashi, Kazuyoshi, Hayakawa, Ryoma, Chikyow, Toyohiro, Wakayama, Yutaka
Published in Advanced electronic materials (01.08.2017)
Published in Advanced electronic materials (01.08.2017)
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