A MOSFET electron mobility model of wide temperature range (77 - 400 K) for IC simulation
Chain, Kenneth, Huang, Jian-hui, Duster, Jon, Ko, Ping K, Hu, Chenming
Published in Semiconductor science and technology (01.04.1997)
Published in Semiconductor science and technology (01.04.1997)
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Journal Article
Numerical modeling of linear doping profiles for high-voltage thin-film SOI devices
Shengdong Zhang, Sin, J.K.O., Lai, T.M.L., Ko, P.K.
Published in IEEE transactions on electron devices (01.05.1999)
Published in IEEE transactions on electron devices (01.05.1999)
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Journal Article
Polysilicon gate depletion effect on IC performance
Chen, Kai, Chan, Mansun, Ko, Ping K, Hu, Chenming, Huang, Jian-Hui
Published in Solid-state electronics (01.11.1995)
Published in Solid-state electronics (01.11.1995)
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Journal Article
Performance of the floating gate/body tied NMOSFET photodetector on SOI substrate
Weiquan Zhang, Chan, Mansun, Ko, P.K.
Published in IEEE transactions on electron devices (01.07.2000)
Published in IEEE transactions on electron devices (01.07.2000)
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Journal Article
Shot-noise-induced excess low-frequency noise in floating-body partially depleted SOI MOSFET's
Wei Jin, Chan, P.C.H., Fung, S.K.H., Ko, P.K.
Published in IEEE transactions on electron devices (01.06.1999)
Published in IEEE transactions on electron devices (01.06.1999)
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Journal Article
Threshold voltage model for deep-submicrometer fully depleted SOI MOSFET's
Banna, S.R., Chan, P.C.H., Ko, P.K., Nguyen, C.T., Chan, Mansun
Published in IEEE transactions on electron devices (01.11.1995)
Published in IEEE transactions on electron devices (01.11.1995)
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Journal Article
RF characterization of metal T-gate structure in fully-depleted SOI CMOS technology
Sang Lam, Hui Wan, Pin Su, Wyatt, P.W., Chen, C.L., Niknejad, A.M., Chenming Hu, Ko, P.K., Chan, M.
Published in IEEE electron device letters (01.04.2003)
Published in IEEE electron device letters (01.04.2003)
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Journal Article
The behavior of narrow-width SOI MOSFETs with MESA isolation
Wang, H., Chan, M., Wang, Y., Ko, P.K.
Published in IEEE transactions on electron devices (01.03.2000)
Published in IEEE transactions on electron devices (01.03.2000)
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Journal Article
High gain gate/body tied NMOSFET photo-detector on SOI substrate for low power applications
Zhang, Weiquan, Chan, Mansun, Huang, Ru, Ko, Ping K
Published in Solid-state electronics (01.03.2000)
Published in Solid-state electronics (01.03.2000)
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Journal Article
An AC conductance technique for measuring self-heating in SOI MOSFET's
Tu, R.H., Wann, C., King, J.C., Ko, P.K., Chenming Hu
Published in IEEE electron device letters (01.02.1995)
Published in IEEE electron device letters (01.02.1995)
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Journal Article
High-field transport of inversion-layer electrons and holes including velocity overshoot
Assaderaghi, F., Sinitsky, D., Bokor, J., Ko, P.K., Gaw, H., Chenming Hu
Published in IEEE transactions on electron devices (01.04.1997)
Published in IEEE transactions on electron devices (01.04.1997)
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Journal Article
A Workable Use of the Floating-Body Silicon-On-Sapphire MOSFET as a Transconductance Mixer
Lam, Sang, Lee, Wai-Kit, Chan, Alain C.-K., Mok, Philip K. T., Ko, Ping K., Chan, Mansun
Published in Japanese Journal of Applied Physics (01.04.2004)
Published in Japanese Journal of Applied Physics (01.04.2004)
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Journal Article
Fully depleted CMOS/SOI device design guidelines for low-power applications
Banna, S.R., Chan, P.C.H., Chan, M., Fung, S.K.H., Ko, P.K.
Published in IEEE transactions on electron devices (01.04.1999)
Published in IEEE transactions on electron devices (01.04.1999)
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Journal Article
A unified understanding on fully-depleted SOI NMOSFET hot-carrier degradation
Banna, S.R., Chan, C.H., Chan, Mansun, Fung, S.K.H., Ko, P.K.
Published in IEEE transactions on electron devices (01.01.1998)
Published in IEEE transactions on electron devices (01.01.1998)
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Journal Article
Comparative study of fully depleted and body-grounded non fully depleted SOI MOSFETs for high performance analog and mixed signal circuits
Chan, Mansun, Bin Yu, Zhi-Jian Ma, Nguyen, C.T., Chenming Hu, Ko, P.K.
Published in IEEE transactions on electron devices (01.11.1995)
Published in IEEE transactions on electron devices (01.11.1995)
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Journal Article