On an improved boron segregation calibration from a particularly sensitive power MOS process
Koffel, S., Burenkov, A., Sekowski, M., Pichler, P., Giubertoni, D., Bersani, M., Knaipp, M., Wachmann, E., Schrems, M., Yamamoto, Y., Bolze, D.
Published in Physica status solidi. C (01.01.2014)
Published in Physica status solidi. C (01.01.2014)
Get full text
Journal Article
Investigations on the high current behavior of lateral diffused high-voltage transistors
Knaipp, M., Rohrer, G., Minixhofer, R., Seebacher, E.
Published in IEEE transactions on electron devices (01.10.2004)
Published in IEEE transactions on electron devices (01.10.2004)
Get full text
Journal Article
A 120V 180nm High Voltage CMOS smart power technology for system-on-chip integration
Minixhofer, R, Feilchenfeld, N, Knaipp, M, Röhrer, G, Park, J M, Zierak, M, Enichlmair, H, Levy, M, Loeffler, B, Hershberger, D, Unterleitner, F, Gautsch, M, Chatty, K, Shi, Y, Posch, W, Seebacher, E, Schrems, M, Dunn, J, Harame, D
Published in 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2010)
Get full text
Published in 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2010)
Conference Proceeding
Hot-carrier reliability in high-voltage lateral double-diffused MOS transistors
VESCOLI, V, PARK, J. M, ENICHLMAIR, H, KNAIPP, M, RÖHRER, G, MINIXHOFER, R, SCHREMS, M
Published in IET circuits, devices & systems (01.06.2008)
Published in IET circuits, devices & systems (01.06.2008)
Get full text
Journal Article
Hot-carrier behaviour and ron-BV trade-off optimization for p-channel LDMOS transistors in a 180 nm HV-CMOS technology
Jong Mun Park, Knaipp, M., Enichlmair, H., Minixhofer, R., Yun Shi, Feilchenfeld, N.
Published in 2012 24th International Symposium on Power Semiconductor Devices and ICs (01.06.2012)
Published in 2012 24th International Symposium on Power Semiconductor Devices and ICs (01.06.2012)
Get full text
Conference Proceeding
Drift design impact on quasi-saturation & HCI for scalable N-LDMOS
Yun Shi, Feilchenfeld, N., Phelps, R., Levy, M., Knaipp, M., Minixhofer, R.
Published in 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs (01.05.2011)
Published in 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs (01.05.2011)
Get full text
Conference Proceeding
Scalable High Voltage CMOS technology for Smart Power and sensor applications
Schrems, M., Knaipp, M., Enichlmair, H., Vescoli, V., Minixhofer, R., Seebacher, E., Leisenberger, F., Wachmann, E., Schatzberger, G., Gensinger, H.
Published in Elektrotechnik und Informationstechnik (01.04.2008)
Published in Elektrotechnik und Informationstechnik (01.04.2008)
Get full text
Journal Article
Hot Carrier Degradation of p-LDMOS Transistors for RF Applications
Kraft, J., Loffler, B., Knaipp, M., Wachmann, E.
Published in 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual (01.04.2007)
Published in 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual (01.04.2007)
Get full text
Conference Proceeding
Investigations on an Isolated Lateral High-Voltage n-channel LDMOS Transistor with a Typical Breakdown of 150V
Knaipp, M., Jong Mun Park, Vescoli, V., Roehrer, G., Minixhofer, R.
Published in 2006 European Solid-State Device Research Conference (01.09.2006)
Published in 2006 European Solid-State Device Research Conference (01.09.2006)
Get full text
Conference Proceeding
FlexRay Transceiver in a 0.35 µm CMOS High-Voltage Technology
Baronti, F., D'Abramo, P., Knaipp, M., Minixhofer, R., Roncella, R., Saletti, R., Schrems, M., Serventi, R., Vescoli, V.
Published in Proceedings of the Design Automation & Test in Europe Conference (2006)
Published in Proceedings of the Design Automation & Test in Europe Conference (2006)
Get full text
Conference Proceeding
Hydrodynamic modeling of avalanche breakdown in a gate overvoltage protection structure
Knaipp, Martin, Kanert, Werner, Selberherr, Siegfried
Published in Solid-state electronics (01.07.2000)
Published in Solid-state electronics (01.07.2000)
Get full text
Journal Article
Simulation of Polysilicon Emitter Bipolar Transistors
Palankovski, V., Grasser, T., Knaipp, M., Selberherr, S.
Published in 30th European Solid-State Device Research Conference (2000)
Published in 30th European Solid-State Device Research Conference (2000)
Get full text
Conference Proceeding
A Physically Based Substrate Current Simulation
Knaipp, M., Grasser, T., Selberherr, S.
Published in 27th European Solid-State Device Research Conference (1997)
Published in 27th European Solid-State Device Research Conference (1997)
Get full text
Conference Proceeding
Development of a high voltage deep trench environment for a Smart Power Technology
Knaipp, M., Stueckler, E., Bissmann, W.
Published in 2009 13th European Conference on Power Electronics and Applications (01.09.2009)
Get full text
Published in 2009 13th European Conference on Power Electronics and Applications (01.09.2009)
Conference Proceeding
Analysis of Leakage Currents in Smart Power Devices
Knaipp, M., Simlinger, T., Kanert, W., Selberherr, S.
Published in ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference (01.09.1996)
Get full text
Published in ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference (01.09.1996)
Conference Proceeding
A novel system for fully automated creation of layout, documentation and test programs for electrical test structures
Leonardelli, G., Roehrer, G., Minixhofer, R., Knaipp, M.
Published in 2004 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (IEEE Cat. No.04CH37530) (2004)
Published in 2004 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (IEEE Cat. No.04CH37530) (2004)
Get full text
Conference Proceeding