Record quantum efficiency from strain compensated superlattice GaAs/GaAsP photocathode for spin polarized electron source
Biswas, Jyoti, Cultrera, Luca, Liu, Wei, Wang, Erdong, Skaritka, John, Kisslinger, Kim, Hawkins, S. D., Lee, S. R., Klem, J. F.
Published in AIP advances (01.08.2023)
Published in AIP advances (01.08.2023)
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Journal Article
Anomalously large resistance at the charge neutrality point in a zero-gap InAs/GaSb bilayer
Yu, W, Clericò, V, Fuentevilla, C Hernández, Shi, X, Jiang, Y, Saha, D, Lou, W K, Chang, K, Huang, D H, Gumbs, G, Smirnov, D, Stanton, C J, Jiang, Z, Bellani, V, Meziani, Y, Diez, E, Pan, W, Hawkins, S D, Klem, J F
Published in New journal of physics (31.05.2018)
Published in New journal of physics (31.05.2018)
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Journal Article
Excitonic fine structure of out-of-plane nitrogen dyads in GaAs
Ouellet-Plamondon, C., Marcet, S., Klem, J.F., Francoeur, S.
Published in Journal of luminescence (01.11.2011)
Published in Journal of luminescence (01.11.2011)
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Journal Article
Strong coupling in the sub-wavelength limit using metamaterial nanocavities
Benz, A., Campione, S., Liu, S., Montaño, I., Klem, J.F., Allerman, A, Wendt, J.R., Sinclair, M.B., Capolino, F., Brener, I.
Published in Nature communications (29.11.2013)
Published in Nature communications (29.11.2013)
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Journal Article
Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM
Wood, M.R., Kanedy, K., Lopez, F., Weimer, M., Klem, J.F., Hawkins, S.D., Shaner, E.A., Kim, J.K.
Published in Journal of crystal growth (01.09.2015)
Published in Journal of crystal growth (01.09.2015)
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Journal Article
Advances in Long Wavelength Interband Cascade Lasers
Massengale, J. A., Shen, Yixuan, Yang, R. Q., Hawkins, S. D., Klem, J. F.
Published in 2022 28th International Semiconductor Laser Conference (ISLC) (16.10.2022)
Published in 2022 28th International Semiconductor Laser Conference (ISLC) (16.10.2022)
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Conference Proceeding
Complete quantum control of exciton qubits bound to isoelectronic centres
Éthier-Majcher, G., St-Jean, P., Boso, G., Tosi, A., Klem, J. F., Francoeur, S.
Published in Nature communications (30.05.2014)
Published in Nature communications (30.05.2014)
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Journal Article
OC-48 capable InGaAsN vertical cavity lasers
Jackson, A.W., Naone, R.L., Dalberth, M.J., Smith, J.M., Malone, K.J., Kisker, D.W., Klem, J.F., Choquette, K.D., Serkland, D.K., Geib, K.M.
Published in Electronics letters (15.03.2001)
Published in Electronics letters (15.03.2001)
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Journal Article
Development of bottom-emitting 1300-nm vertical-cavity surface-emitting lasers
Louderback, D.A., Fish, M.A., Klem, J.F., Serkland, D.K., Choquette, K.D., Pickrell, G.W., Stone, R.V., Guilfoyle, P.S.
Published in IEEE photonics technology letters (01.04.2004)
Published in IEEE photonics technology letters (01.04.2004)
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Journal Article
Monolithic metallic nanocavities for strong light-matter interaction to quantum-well intersubband excitations
Benz, A, Campione, S, Liu, S, Montano, I, Klem, J F, Sinclair, M B, Capolino, F, Brener, I
Published in Optics express (30.12.2013)
Published in Optics express (30.12.2013)
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Journal Article
Quantum Enhanced Josephson Junction Field-Effect Transistors for Logic Applications
Pan, W, Muhowski, A J, Martinez, W M, Sovinec, C L H, Mendez, J P, Mamaluy, D, W Yu, Shi, X, Sapkota, K, Hawkins, S D, Klem, J F
Published in arXiv.org (27.09.2024)
Published in arXiv.org (27.09.2024)
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Paper
Journal Article
Vertical AlGaAs/GaAs heterojunction bipolar transistors with 106 V breakdown
Baca, A.G, Chang, P.C, Klem, J.F, Ashby, C.I.H, Martin, D.C
Published in Solid-state electronics (01.05.2001)
Published in Solid-state electronics (01.05.2001)
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Journal Article
Reduced coupling loss using a tapered-rib adiabatic-following fiber coupler
Smith, R.E., Sullivan, C.T., Vawter, G.A., Hadley, G.R., Wendt, J.R., Snipes, M.B., Klem, J.F.
Published in IEEE photonics technology letters (01.08.1996)
Published in IEEE photonics technology letters (01.08.1996)
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Journal Article
Growth and properties of GaAsSb/InGaAs superlattices on InP
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Journal Article
Conference Proceeding
Enhanced high-frequency performance in a GaAs, self-aligned, n-JFET using a carbon buried p-implant
Zolper, J.C., Shenvin, M.E., Baca, A.G., Shul, R.J., Klem, J.F., Hietala, V.M.
Published in IEEE electron device letters (01.12.1994)
Published in IEEE electron device letters (01.12.1994)
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Journal Article