Switching mechanism in two-terminal vanadium dioxide devices
Radu, Iuliana P, Govoreanu, B, Mertens, S, Shi, X, Cantoro, M, Schaekers, M, Jurczak, M, De Gendt, S, Stesmans, A, Kittl, J A, Heyns, M, Martens, K
Published in Nanotechnology (24.04.2015)
Published in Nanotechnology (24.04.2015)
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Journal Article
Study of interfacial reactions and phase stabilization of mixed Sc, Dy, Hf high- k oxides by attenuated total reflectance infrared spectroscopy
Hardy, A., Adelmann, C., Van Elshocht, S., Van den Rul, H., Van Bael, M.K., De Gendt, S., D’Olieslaeger, M., Heyns, M., Kittl, J.A., Mullens, J.
Published in Applied surface science (15.06.2009)
Published in Applied surface science (15.06.2009)
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Journal Article
Study of the impact of doping concentration and Schottky barrier height on ohmic contacts to n-type germanium
Firrincieli, A., Martens, K., Simoen, E., Claeys, C., Kittl, J.A.
Published in Microelectronic engineering (01.06.2013)
Published in Microelectronic engineering (01.06.2013)
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Journal Article
Conference Proceeding
Work function of Ni silicide phases on HfSiON and SiO2 : NiSi, Ni2Si, Ni31Si12, and Ni3Si fully silicided gates
KITTL, J. A, PAWLAK, M. A, ABSIL, P, MAEX, K, BIESEMANS, S, LAUWERS, A, DEMEURISSE, C, OPSOMER, K, ANIL, K. G, VRANCKEN, C, VAN DAL, M. J. H, VELOSO, A, KUBICEK, S
Published in IEEE electron device letters (2006)
Published in IEEE electron device letters (2006)
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Journal Article
Understanding the potential and limitations of HfAlO as interpoly dielectric in floating-gate Flash memory
Govoreanu, B., Degraeve, R., Zahid, M.B., Nyns, L., Cho, M., Kaczer, B., Jurczak, M., Kittl, J.A., Van Houdt, J.
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Conference Proceeding
Ni- and Co-based silicides for advanced CMOS applications
Kittl, J.A., Lauwers, A., Chamirian, O., Van Dal, M., Akheyar, A., De Potter, M., Lindsay, R., Maex, K.
Published in Microelectronic engineering (01.11.2003)
Published in Microelectronic engineering (01.11.2003)
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Conference Proceeding
Complete experimental test of kinetic models for rapid alloy solidification
Kittl, J.A., Sanders, P.G., Aziz, M.J., Brunco, D.P., Thompson, M.O.
Published in Acta materialia (04.12.2000)
Published in Acta materialia (04.12.2000)
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Journal Article
Thickness scaling issues of Ni silicide
Chamirian, O, Kittl, J.A, Lauwers, A, Richard, O, van Dal, M, Maex, K
Published in Microelectronic engineering (01.11.2003)
Published in Microelectronic engineering (01.11.2003)
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Journal Article
Conference Proceeding
Ferroelectric Switching Delay as Cause of Negative Capacitance and the Implications to NCFETs
Obradovic, B., Rakshit, T., Hatcher, R., Kittl, J. A., Rodder, M. S.
Published in 2018 IEEE Symposium on VLSI Technology (01.06.2018)
Published in 2018 IEEE Symposium on VLSI Technology (01.06.2018)
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Conference Proceeding
Effect of the composition on the bandgap width of high-κ MexTiyOz (Me = Hf, Ta, Sr) layers
WANG, W. C, BADYLEVICH, M, WENGER, Ch, AFANAS'EV, V. V, STESMANS, A, POPOVICI, M, TOMIDA, K, MENOU, N, KITTL, J. A, LUKOSIUS, M, BARISTIRAN KAYNAK, C
Published in Thin solid films (30.06.2011)
Published in Thin solid films (30.06.2011)
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Journal Article
Investigation of Ni fully silicided gates for sub-45 nm CMOS technologies
Pawlak, M.A., Kittl, J.A., Chamirian, O., Veloso, A., Lauwers, A., Schram, T., Maex, K., Vantomme, A.
Published in Microelectronic engineering (01.10.2004)
Published in Microelectronic engineering (01.10.2004)
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Journal Article
Conference Proceeding
Self-aligned Ti and Co silicides for high performance sub-0.18 μm CMOS technologies
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Journal Article
Conference Proceeding
Rare-earth aluminates as a charge trapping materials for NAND flash memories: Integration and electrical evaluation
Suhane, A., Cacciato, A., Richard, O., Arreghini, A., Adelmann, C., Swerts, J., Rothschild, O., Van den bosch, G., Breuil, L., Bender, H., Jurczak, M., Debusschere, I., Kittl, J.A., De Meyer, K., Van Houdt, J.
Published in Solid-state electronics (01.11.2011)
Published in Solid-state electronics (01.11.2011)
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Conference Proceeding
High- k dielectrics for future generation memory devices (Invited Paper)
Kittl, J.A., Opsomer, K., Popovici, M., Menou, N., Kaczer, B., Wang, X.P., Adelmann, C., Pawlak, M.A., Tomida, K., Rothschild, A., Govoreanu, B., Degraeve, R., Schaekers, M., Zahid, M., Delabie, A., Meersschaut, J., Polspoel, W., Clima, S., Pourtois, G., Knaepen, W., Detavernier, C., Afanas’ev, V.V., Blomberg, T., Pierreux, D., Swerts, J., Fischer, P., Maes, J.W., Manger, D., Vandervorst, W., Conard, T., Franquet, A., Favia, P., Bender, H., Brijs, B., Van Elshocht, S., Jurczak, M., Van Houdt, J., Wouters, D.J.
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Conference Proceeding
The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance
Martens, K., Radu, I. P., Mertens, S., Shi, X., Nyns, L., Cosemans, S., Favia, P., Bender, H., Conard, T., Schaekers, M., De Gendt, S., Afanas'ev, V., Kittl, J. A., Heyns, M., Jurczak, M.
Published in Journal of applied physics (15.12.2012)
Published in Journal of applied physics (15.12.2012)
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Journal Article
Low temperature spike anneal for Ni-silicide formation
Lauwers, A., Kittl, J.A., Van Dal, M., Chamirian, O., Lindsay, R., de Potter, M., Demeurisse, C., Vrancken, C., Maex, K., Pagès, X., Van der Jeugd, K., Kuznetsov, V., Granneman, E.
Published in Microelectronic engineering (01.10.2004)
Published in Microelectronic engineering (01.10.2004)
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Conference Proceeding
Stress evolution during Ni–Si compound formation for fully silicided (FUSI) gates
Torregiani, C., Van Bockstael, C., Detavernier, C., Lavoie, C., Lauwers, A., Maex, K., Kittl, J.A.
Published in Microelectronic engineering (01.11.2007)
Published in Microelectronic engineering (01.11.2007)
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Conference Proceeding
Modulation of the effective work function of fully-silicided (FUSI) gate stacks
Kittl, J.A., Lauwers, A., Pawlak, M.A., Veloso, A., Yu, H.Y., Chang, S.Z., Hoffmann, T., Pourtois, G., Brus, S., Demeurisse, C., Vrancken, C., Absil, P.P., Biesemans, S.
Published in Microelectronic engineering (01.09.2007)
Published in Microelectronic engineering (01.09.2007)
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Conference Proceeding
Modulation of the workfunction of Ni fully silicided gates by doping: dielectric and silicide phase effects
Pawlak, M.A., Lauwers, A., Janssens, T., Anil, K.G., Opsomer, K., Maex, K., Vantomme, A., Kittl, J.A.
Published in IEEE electron device letters (01.02.2006)
Published in IEEE electron device letters (01.02.2006)
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Salicides: materials, scaling and manufacturability issues for future integrated circuits ( invited)
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