Extreme reduction of on-resistance in vertical GaN p-n diodes by low dislocation density and high carrier concentration GaN wafers fabricated using oxide vapor phase epitaxy method
Takino, Junichi, Sumi, Tomoaki, Okayama, Yoshio, Kitamoto, Akira, Imanishi, Masayuki, Yoshimura, Masashi, Asai, Naomi, Ohta, Hiroshi, Mishima, Tomoyoshi, Mori, Yusuke
Published in Applied physics express (01.07.2020)
Published in Applied physics express (01.07.2020)
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Journal Article
Effect of additional N2O gas on the suppression of polycrystal formation and high-rate GaN crystal growth by OVPE method
Shimizu, Ayumu, Kitamoto, Akira, Kamiyama, Masahiro, Tsuno, Shintaro, Ishibashi, Keiju, Usami, Shigeyoshi, Imanishi, Masayuki, Maruyama, Mihoko, Yoshimura, Masashi, Sumi, Tomoaki, Takino, Junichi, Okayama, Yoshio, Hata, Masahiko, Isemura, Masashi, Mori, Yusuke
Published in Journal of crystal growth (01.03.2022)
Published in Journal of crystal growth (01.03.2022)
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Journal Article
Development of a 2-inch GaN wafer by using the oxide vapor phase epitaxy method
Takino, Junichi, Sumi, Tomoaki, Okayama, Yoshio, Nobuoka, Masaki, Kitamoto, Akira, Imanishi, Msayuki, Yoshimura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
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Journal Article
Floral design GaN crystals: low-resistive and low-dislocation-density growth by oxide vapor phase epitaxy
Takino, Junichi, Sumi, Tomoaki, Okayama, Yoshio, Kitamoto, Akira, Usami, Shigeyoshi, Imanishi, Masayuki, Yoshimura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.09.2021)
Published in Japanese Journal of Applied Physics (01.09.2021)
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Journal Article
High-rate OVPE-GaN crystal growth at a very high temperature of 1300 °C
Shimizu, Ayumu, Usami, Shigeyoshi, Kamiyama, Masahiro, Kawanami, Itsuki, Kitamoto, Akira, Imanishi, Masayuki, Maruyama, Mihoko, Yoshimura, Masashi, Hata, Masahiko, Isemura, Masashi, Mori, Yusuke
Published in Applied physics express (14.02.2022)
Published in Applied physics express (14.02.2022)
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Journal Article
Fabrication of low-curvature 2 in. GaN wafers by Na-flux coalescence growth technique
Imade, Mamoru, Imanishi, Masayuki, Todoroki, Yuma, Imabayashi, Hiroki, Matsuo, Daisuke, Murakami, Kosuke, Takazawa, Hideo, Kitamoto, Akira, Maruyama, Mihoko, Yoshimura, Masashi, Mori, Yusuke
Published in Applied physics express (01.03.2014)
Published in Applied physics express (01.03.2014)
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Journal Article
Effect of methane additive on GaN growth using the OVPE method
Kitamoto, Akira, Takino, Junichi, Sumi, Tomoaki, Kamiyama, Masahiro, Tsuno, Shintaro, Ishibashi, Keiju, Gunji, Yoshikazu, Imanishi, Masayuki, Okayama, Yoshio, Nobuoka, Masaki, Isemura, Masashi, Yoshimura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
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Journal Article
Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3
Imade, Mamoru, Bu, Yuan, Sumi, Tomoaki, Kitamoto, Akira, Yoshimura, Masashi, Sasaki, Takatomo, Imsemura, Masashi, Mori, Yusuke
Published in Journal of crystal growth (01.07.2012)
Published in Journal of crystal growth (01.07.2012)
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Journal Article
Conference Proceeding
Improvement of crystallinity of GaN layers grown using Ga2O vapor synthesized from liquid Ga and H2O vapor
Yamaguchi, Yohei, Taniyama, Yuuki, Takatsu, Hiroaki, Kitamoto, Akira, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.05.2016)
Published in Japanese Journal of Applied Physics (01.05.2016)
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Journal Article
Dependence of polarity inversion on V/III ratio in −c-GaN growth by oxide vapor phase epitaxy
Taniyama, Yuki, Yamaguchi, Yohei, Takatsu, Hiroaki, Sumi, Tomoaki, Kitamoto, Akira, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.05.2016)
Published in Japanese Journal of Applied Physics (01.05.2016)
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Journal Article
Growth of GaN layers using Ga2O vapor obtained from Ga and H2O vapor
Sumi, Tomoaki, Taniyama, Yuuki, Takatsu, Hiroaki, Juta, Masami, Kitamoto, Akira, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (07.04.2015)
Published in Japanese Journal of Applied Physics (07.04.2015)
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Journal Article
Effects of Solution Stirring on the Growth of Bulk GaN Single Crystals by Na Flux Method
Murakami, Kousuke, Matsuo, Daisuke, Imabayashi, Hiroki, Takazawa, Hideo, Todoroki, Yuma, Kitamoto, Akira, Maruyama, Mihoko, Imade, Mamoru, Yoshimura, Masashi, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.08.2013)
Published in Japanese Journal of Applied Physics (01.08.2013)
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Journal Article
The Effects of Substrate Surface Treatments on Growth of $a$-Plane GaN Single Crystals Using Na Flux Method
Masumoto, Keiko, Murakami, Kosuke, Imabayashi, Hiroki, Takazawa, Hideo, Todoroki, Yuma, Matsuo, Daisuke, Kitamoto, Akira, Maruyama, Mihoko, Imade, Mamoru, Yoshimura, Masashi, Kitaoka, Yasuo, Sasaki, Takatomo, Mori, Yusuke
Published in Japanese Journal of Applied Physics (01.03.2012)
Published in Japanese Journal of Applied Physics (01.03.2012)
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Journal Article
Absolute surface energies of oxygen-adsorbed GaN surfaces
Kawamura, Takahiro, Akiyama, Toru, Kitamoto, Akira, Imanishi, Masayuki, Yoshimura, Masashi, Mori, Yusuke, Morikawa, Yoshitada, Kangawa, Yoshihiro, Kakimoto, Koichi
Published in Journal of crystal growth (01.11.2020)
Published in Journal of crystal growth (01.11.2020)
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Journal Article
High-rate OVPE-GaN growth by the suppression of polycrystal formation with additional H2O vapor in a high-temperature condition
Shimizu, Ayumu, Tsuno, Shintaro, Kamiyama, Masahiro, Ishibashi, Keiju, Kitamoto, Akira, Imanishi, Masayuki, Yoshimura, Masashi, Hata, Masahiko, Isemura, Masashi, Mori, Yusuke
Published in Applied physics express (01.09.2020)
Published in Applied physics express (01.09.2020)
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Journal Article
GROUP III NITRIDE SUBSTRATE
IMANISHI MASAYUKI, KITAMOTO AKIRA, TAKINO JUNICHI, OKAYAMA YOSHIHISA, SUMI TOMOAKI, YOSHIMURA MASASHI, MORI YUSUKE
Year of Publication 28.05.2024
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Year of Publication 28.05.2024
Patent
Centimeter-Sized Bulk GaN Single Crystals Grown by the Na-Flux Method with a Necking Technique
Imade, Mamoru, Murakami, Kosuke, Matsuo, Daisuke, Imabayashi, Hiroki, Takazawa, Hideo, Todoroki, Yuma, Kitamoto, Akira, Maruyama, Mihoko, Yoshimura, Masashi, Mori, Yusuke
Published in Crystal growth & design (03.07.2012)
Published in Crystal growth & design (03.07.2012)
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Journal Article
High-rate OVPE-GaN growth by the suppression of polycrystal formation with additional H 2 O vapor in a high-temperature condition
Shimizu, Ayumu, Tsuno, Shintaro, Kamiyama, Masahiro, Ishibashi, Keiju, Kitamoto, Akira, Imanishi, Masayuki, Yoshimura, Masashi, Hata, Masahiko, Isemura, Masashi, Mori, Yusuke
Published in Applied physics express (01.09.2020)
Published in Applied physics express (01.09.2020)
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Journal Article