Improved bipolar transistor performance in a VLSI CMOS process
Yue, C.S., Huang, C.C., Schrankler, J.W., Pu, N.F., Kirchner, G.D., Rahn, C.
Published in IEEE electron device letters (01.08.1983)
Published in IEEE electron device letters (01.08.1983)
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Journal Article
An enhanced fully scaled 1.2-/spl mu/m CMOS process for analog
Reich, R.K., Rahn, C.H., Holt, M.S., Schrankler, J.W., Ju, D.-H., Kirchner, G.D.
Published in IEEE journal of solid-state circuits (01.04.1986)
Published in IEEE journal of solid-state circuits (01.04.1986)
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Journal Article
An enhanced fully scaled 1.2-μm CMOS process for analog
Reich, R.K., Rahn, C.H., Holt, M.S., Schrankler, J.W., Ju, D.-H., Kirchner, G.D.
Published in IEEE journal of solid-state circuits (01.04.1986)
Published in IEEE journal of solid-state circuits (01.04.1986)
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Journal Article
Radiation-dependent hot-carrier effects
Reich, R.K., Schrankler, J.W., Dong-Hyuk Ju, Holt, M.S., Kirchner, G.D.
Published in IEEE electron device letters (01.04.1986)
Published in IEEE electron device letters (01.04.1986)
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Journal Article
Transient substrate current generation and device degradation in CMOS circuits at 77K
Ju, D.-H., Reich, R.K., Schrankler, J.W., Holt, M.S., Kirchner, G.D.
Published in 1985 International Electron Devices Meeting (1985)
Published in 1985 International Electron Devices Meeting (1985)
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Conference Proceeding
Cryogenic behavior of scaled CMOS devices
Schrankler, J.W., Huang, J.S.T., Lutze, R.S.L., Vyas, H.P., Kirchner, G.D.
Published in 1984 International Electron Devices Meeting (1984)
Published in 1984 International Electron Devices Meeting (1984)
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Conference Proceeding
Characterization of CMOS latch-up
Huang, C.C., Hartranft, M.D., Pu, N.F., Yue, C., Rahn, C., Schrankler, J., Kirchner, G.D., Hampton, F.L., Hendrickson, T.E.
Published in 1982 International Electron Devices Meeting (1982)
Published in 1982 International Electron Devices Meeting (1982)
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Conference Proceeding