GaSb-based heterostructure with buried vacuum pocket photonic crystal layer
Liu, R, Shterengas, L, Stein, A, Kipshidze, G, Jiang, J, Hosoda, T, Belenky, G
Published in Electronics letters (16.04.2020)
Published in Electronics letters (16.04.2020)
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Journal Article
Dual wavelength operation of the GaSb-based Y-branch distributed Bragg reflector lasers near 2.1 μ m
Jiang, J, Shterengas, L, Hosoda, T, Stein, A, Belyanin, A, Kipshidze, G, Belenky, G
Published in Semiconductor science and technology (01.02.2020)
Published in Semiconductor science and technology (01.02.2020)
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Journal Article
Lattice parameter engineering for III–V long wave infrared photonics
Belenky, G, Lin, Y, Shterengas, L, Donetsky, D, Kipshidze, G, Suchalkin, S
Published in Electronics letters (17.09.2015)
Published in Electronics letters (17.09.2015)
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Journal Article
Electronic properties of unstrained unrelaxed narrow gap InAsxSb1−x alloys
Suchalkin, S, Ludwig, J, Belenky, G, Laikhtman, B, Kipshidze, G, Lin, Y, Shterengas, L, Smirnov, D, Luryi, S, Sarney, W L, Svensson, S P
Published in Journal of physics. D, Applied physics (03.02.2016)
Published in Journal of physics. D, Applied physics (03.02.2016)
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Journal Article
Distributed feedback 3.27 mu m diode lasers with continuous-wave output power above 15 mW at room temperature
Liang, R, Hosoda, T, Shterengas, L, Stein, A, Lu, M, Kipshidze, G, Belenky, G
Published in Electronics letters (11.09.2014)
Published in Electronics letters (11.09.2014)
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Journal Article
AlInAsSb for M-LWIR detectors
Sarney, W.L., Svensson, S.P., Wang, D., Donetsky, D., Kipshidze, G., Shterengas, L., Lin, Y., Belenky, G.
Published in Journal of crystal growth (01.09.2015)
Published in Journal of crystal growth (01.09.2015)
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Journal Article
Narrow ridge GaSb-based cascade diode lasers fabricated by methane–hydrogen reactive ion etching
Wang, M, Hosoda, T, Shterengas, L, Kipshidze, G, Hwang, D.J, Belenky, G
Published in Electronics letters (05.01.2017)
Published in Electronics letters (05.01.2017)
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Journal Article
Room temperature operated diffraction limited λ ≃ 3 µm diode lasers with 37 mW of continuous-wave output power
Hosoda, T, Liang, R, Kipshidze, G, Shterengas, L, Belenky, G
Published in Electronics letters (09.05.2013)
Published in Electronics letters (09.05.2013)
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Journal Article
Distributed feedback 3.27 µm diode lasers with continuous-wave output power above 15 mW at room temperature
Liang, R, Hosoda, T, Shterengas, L, Stein, A, Lu, M, Kipshidze, G, Belenky, G
Published in Electronics letters (11.09.2014)
Published in Electronics letters (11.09.2014)
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Journal Article
Diode lasers emitting at 3 μm with 300 mW of continuous-wave output power
SHTERENGAS, L, KIPSHIDZE, G, HOSODA, T, CHEN, J, BELENKY, G
Published in Electronics letters (27.08.2009)
Published in Electronics letters (27.08.2009)
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Journal Article
In As1–x Sb x heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers
Guseynov, R. R., Tanriverdiyev, V. A., Kipshidze, G., Aliyeva, Ye. N., Aliguliyeva, Kh. V., Abdullayev, N. A., Mamedov, N. T.
Published in Semiconductors (Woodbury, N.Y.) (01.04.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.04.2017)
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Journal Article
Photo- and electroluminescence in strong electric fields in Sb-containing narrow gap semiconductor materials
Vinnichenko, M Ya, Makhov, I S, Panevin, V Yu, Selivanov, A V, Firsov, D A, Vorobjev, L E, Pikhtin, N A, Bakhvalov, K V, Shterengas, L, Belenky, G, Kipshidze, G
Published in Journal of physics. Conference series (01.08.2016)
Published in Journal of physics. Conference series (01.08.2016)
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Journal Article
2.3 μm type-I quantum well GalnAsSb /AlGaAsSb /GaSb laser diodes with quasi-CW output power of 1.4W
DONETSKY, D, KIPSHIDZE, G, SHTERENGAS, L, HOSODA, T, BELENKY, G
Published in Electronics letters (19.07.2007)
Published in Electronics letters (19.07.2007)
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Journal Article
2.7- \mu m GaSb-Based Diode Lasers With Quinary Waveguide
Chen, J., Kipshidze, G., Shterengas, L., Hosoda, T., Wang, Y., Donetsky, D., Belenky, G.
Published in IEEE photonics technology letters (15.08.2009)
Published in IEEE photonics technology letters (15.08.2009)
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Journal Article
Effect of Quantum Well Compressive Strain Above 1% On Differential Gain and Threshold Current Density in Type-I GaSb-Based Diode Lasers
Jianfeng Chen, Donetsky, D., Shterengas, L., Kisin, M.V., Kipshidze, G., Belenky, G.
Published in IEEE journal of quantum electronics (01.12.2008)
Published in IEEE journal of quantum electronics (01.12.2008)
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Journal Article
Single spatial mode room temperature operated 3.15 μm diode lasers
CHEN, J, HOSODA, T, KIPSHIDZE, G, SHTERENGAS, L, BELENKY, G, SOIBEL, A, FREZ, C, FOROUHAR, S
Published in Electronics letters (04.03.2010)
Published in Electronics letters (04.03.2010)
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Journal Article
Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells
Vinnichenko, M. Ya, Vorobjev, L. E., Firsov, D. A., Mashko, M. O., Balagula, R. M., Belenky, G., Shterengas, L., Kipshidze, G.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2013)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2013)
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