7.9 1/2.74-inch 32Mpixel-Prototype CMOS Image Sensor with 0.64μ m Unit Pixels Separated by Full-Depth Deep-Trench Isolation
Park, JongEun, Park, Sungbong, Cho, Kwansik, Lee, Taehun, Lee, Changkyu, Kim, DongHyun, Lee, Beomsuk, Kim, SungIn, Ji, Ho-Chul, Im, DongMo, Park, Haeyong, Kim, Jinyoung, Cha, JungHo, Kim, Taehoon, Joe, In-Sung, Hong, Soojin, Chang, Chongkwang, Kim, Jingyun, Shim, WooGwan, Kim, Taehee, Lee, Jamie, Park, Donghyuk, Kim, EuiYeol, Park, Howoo, Lee, Jaekyu, Kim, Yitae, Ahn, JungChak, Hong, YoungKi, Jun, ChungSam, Kim, HyunChul, Moon, Chang-Rok, Kang, Ho-Kyu
Published in 2021 IEEE International Solid- State Circuits Conference (ISSCC) (13.02.2021)
Published in 2021 IEEE International Solid- State Circuits Conference (ISSCC) (13.02.2021)
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Conference Proceeding
AIR CONDITIONER
KIM, Younghoon, SON, Sunhee, KIM, Taewoo, LEE, Wonhee, JUNG, Changwoo, KWON, Junseok, HA, Jongkweon, HWANG, Jun, KIM, Jingyun, OH, Seungwon
Year of Publication 10.03.2022
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Year of Publication 10.03.2022
Patent
A 64Mpixel CMOS Image Sensor with 0.56μm Unit Pixels Separated by Front Deep-Trench Isolation
Park, Sungbong, Lee, ChangKyu, Park, Sangcheon, Park, Haeyong, Lee, Taeheon, Park, Dami, Heo, Minsung, Park, Inyong, Yeo, Hyunyoung, Lee, Youna, Lee, Juhee, Lee, Beomsuk, Lee, Dong-Chul, Kim, Jinyoung, Kim, Bokwon, Pyo, Jinsun, Quan, Shili, You, Sungyong, Ro, Inho, Choi, Sungsoo, Kim, Sung-In, Joe, In-Sung, Park, Jongeun, Koo, Chang-Hyo, Kim, Jae-Ho, Chang, Chong Kwang, Kim, Taehee, Kim, JinGyun, Lee, Jamie, Kim, Hyunchul, Moon, Chang-rok, Kim, Hyoung-Sub
Published in 2022 IEEE International Solid- State Circuits Conference (ISSCC) (20.02.2022)
Published in 2022 IEEE International Solid- State Circuits Conference (ISSCC) (20.02.2022)
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3 Method for manufacturing three dimensional semiconductor memory device
KIM JINGYUN, LEE SEUNG YUP, JANG KYUNG TAE, SHIN SEUNGMOK, LEE MYOUNGBUM
Year of Publication 20.07.2018
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Year of Publication 20.07.2018
Patent
5.5 A 2.1e− Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology
Lee, Jae-Kyu, Kim, Seung Sik, Baek, In-Gyu, Shim, Heesung, Kim, Taehoon, Kim, Taehyoung, Kyoung, Jungchan, Im, Dongmo, Choi, Jinyong, Cho, KeunYeong, Kim, Daehoon, Lim, Haemin, Seo, Min-Woong, Kim, JuYoung, Kwon, Doowon, Song, Jiyoun, Kim, Jiyoon, Jang, Minho, Moon, Joosung, Kim, HyunChul, Chang, Chong Kwang, Kim, JinGyun, Koh, Kyoungmin, Lim, HanJin, Ahn, JungChak, Hong, Hyeongsun, Lee, Kyupil, Kang, Ho-Kyu
Published in 2020 IEEE International Solid- State Circuits Conference - (ISSCC) (01.02.2020)
Published in 2020 IEEE International Solid- State Circuits Conference - (ISSCC) (01.02.2020)
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5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology
Kim, HyunChul, Park, Jongeun, Joe, Insung, Kwon, Doowon, Kim, Joo Hyoung, Cho, Dongsuk, Lee, Taehun, Lee, Changkyu, Park, Haeyong, Hong, Soojin, Chang, Chongkwang, Kim, Jingyun, Lim, Hanjin, Oh, Youngsun, Kim, Yitae, Nah, Seungjoo, Jung, Sangill, Lee, Jaekyu, Ahn, JungChak, Hong, Hyeongsun, Lee, Kyupil, Kang, Ho-Kyu
Published in 2020 IEEE International Solid- State Circuits Conference - (ISSCC) (01.02.2020)
Published in 2020 IEEE International Solid- State Circuits Conference - (ISSCC) (01.02.2020)
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