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Gate-voltage-induced reversible electrical phase transitions in Mo0.67W0.33Se2 devices

by Min-Sik, Kim, Dong-Hwan Choi, Lee, In-Ho, Wu-Sin, Kim, Kwon, Duhyuk, Myung-Ho, Bae, Ju-Jin, Kim
Published in Nanoscale (17.11.2022)

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Terahertz conductivity of high-quality indium films deposited using a substrate cooling method

by Choi, Geunchang, Choi, Dong-Hwan, Ryeom, Junho, Park, Dae Young, Kim, Wu-Sin, Kim, Ju-Jin, Bahk, Young-Mi, Jeong, Mun Seok
Published in Current applied physics (01.08.2023)

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Role of Quantum Capacitance in a Carbon Nanotube Tunneling Device

by Kim, Wu-Sin, Myoung, Nojoon, Bae, Myung-Ho, Kim, Ju-Jin
Published in ACS applied electronic materials (28.05.2024)

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Gate-voltage-induced reversible electrical phase transitions in Mo 0.67 W 0.33 Se 2 devices

by Kim, Min-Sik, Choi, Dong-Hwan, Lee, In-Ho, Kim, Wu-Sin, Kwon, Duhyuk, Bae, Myung-Ho, Kim, Ju-Jin
Published in Nanoscale (17.11.2022)

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Gate-voltage-induced reversible electrical phase transitions in MoWSe devices

by Kim, Min-Sik, Choi, Dong-Hwan, Lee, In-Ho, Kim, Wu-Sin, Kwon, Duhyuk, Bae, Myung-Ho, Kim, Ju-Jin
Published in Nanoscale (17.11.2022)

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Journal Article

Gate-voltage-induced reversible electrical phase transitions in Mo0.67W0.33Se2 devices

Terahertz conductivity of high-quality indium films deposited using a substrate cooling method

Role of Quantum Capacitance in a Carbon Nanotube Tunneling Device

Gate-voltage-induced reversible electrical phase transitions in Mo 0.67 W 0.33 Se 2 devices

Gate-voltage-induced reversible electrical phase transitions in MoWSe devices

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