Low Power and Improved Switching Properties of Selector-Less Ta2O5 Based Resistive Random Access Memory Using Ti-Rich TiN Electrode
Kim, Beomyong, Kim, Wangee, Kim, Hyojune, Jung, Kyooho, Park, Wooyoung, Seo, Bomin, Joo, Moonsig, Lee, Keejeung, Hong, Kwon, Park, Sungki
Published in Jpn J Appl Phys (25.04.2013)
Published in Jpn J Appl Phys (25.04.2013)
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Journal Article
Highly reliable and fast nonvolatile hybrid switching ReRAM memory using thin Al2O3 demonstrated at 54nm memory array
Jaeyun Yi, Hyejung Choi, Seunghwan Lee, Jaeyeon Lee, Donghee Son, Sangkeum Lee, Sangmin Hwang, Seokpyo Song, Jinwon Park, Sookjoo Kim, Wangee Kim, Ja-Yong Kim, Sunghoon Lee, Jiwon Moon, Jinju You, Moonsig Joo, JaeSung Roh, Sungki Park, Sung-Woong Chung, Junghoon Lee, Sung-Joo Hong
Published in 2011 Symposium on VLSI Technology - Digest of Technical Papers (01.06.2011)
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Published in 2011 Symposium on VLSI Technology - Digest of Technical Papers (01.06.2011)
Conference Proceeding
Requirements of bipolar switching ReRAM for 1T1R type high density memory array
Jaeyun Yi, Hyejung Choi, Seokpyo Song, Donghee Son, Sangkeum Lee, Jinwon Park, Wangee Kim, Mingyu Sung, Sunghoon Lee, Jiwon Moon, Choidong Kim, Jungwoo Park, Moonsig Joo, JaeSung Roh, Sungki Park, Sung-Woong Chung, Jaegoan Jeong, Sung-Joo Hong, Sung-Wook Park
Published in Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications (01.04.2011)
Published in Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications (01.04.2011)
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Conference Proceeding
Low Power and Improved Switching Properties of Selector-Less Ta sub(2)O sub(5) Based Resistive Random Access Memory Using Ti-Rich TiN Electrode
Kim, Beomyong, Kim, Wangee, Kim, Hyojune, Jung, Kyooho, Park, Wooyoung, Seo, Bomin, Joo, Moonsig, Lee, Keejeung, Hong, Kwon, Park, Sungki
Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
Get full text
Journal Article
Low Power and Improved Switching Properties of Selector-Less Ta 2 O 5 Based Resistive Random Access Memory Using Ti-Rich TiN Electrode
Kim, Beomyong, Kim, Wangee, Kim, Hyojune, Jung, Kyooho, Park, Wooyoung, Seo, Bomin, Joo, Moonsig, Lee, Keejeung, Hong, Kwon, Park, Sungki
Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
Get full text
Journal Article