Charge Trapping Memory Cell of TANOS (Si-Oxide-SiN-Al2O3-TaN) Structure Compatible to Conventional NAND Flash Memory
Chang-Hyun Lee, Changseok Kang, Jaesung Sim, Jang-Sik Lee, Juhyung kim, Yoocheol Shin, Ki-Tae Park, Sanghun Jeon, Jongsun Sel, Younseok Jeong, Byeongin Choi, Viena Kim, Wonseok Jung, Chung-il Hyun, Jungdal Choi, Kinam Kim
Published in 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop (2006)
Published in 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop (2006)
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Conference Proceeding
Electroluminescence from monolayer of quantum dots formed by multiple dip-coating processes
Lee, Chang-Lyoul, Nam, Sung-Wook, Kim, Viena, Kim, Jang-Joo, Kim, Ki-Bum
Published in Physica Status Solidi (b) (01.04.2009)
Published in Physica Status Solidi (b) (01.04.2009)
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Journal Article
Single and Multiple-Step Dip-Coating of Colloidal Maghemite (γ-Fe2O3) Nanoparticles onto Si, Si3N4, and SiO2 Substrates
Yoon, T.-S., Oh, J., Park, S.-H., Kim, V., Jung, B. G., Min, S.-H., Park, J., Hyeon, T., Kim, K.-B.
Published in Advanced functional materials (01.11.2004)
Published in Advanced functional materials (01.11.2004)
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Journal Article
Data Retention Characteristics of Nitride-Based Charge Trap Memory Devices with High-k Dielectrics and High-Work-Function Metal Gates for Multi-Gigabit Flash Memory
Lee, Jang-Sik, Kang, Chang-Seok, Shin, Yoo-Cheol, Lee, Chang-Hyun, Park, Ki-Tae, Sel, Jong-Sun, Kim, Viena, Choe, Byeong-In, Sim, Jae-Sung, Choi, Jungdal, Kim, Kinam
Published in Japanese Journal of Applied Physics (01.04.2006)
Published in Japanese Journal of Applied Physics (01.04.2006)
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Journal Article
A 64-Cell NAND Flash Memory with Asymmetric S/D Structure for Sub-40nm Technology and Beyond
Park, K.-T., Choi, J., Sel, J., Kim, V., Kang, C., Shin, Y., Roh, U., Park, J., Lee, J.-S., Sim, J., Jeon, S., Lee, C., Kim, K.
Published in 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers (2006)
Published in 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers (2006)
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Conference Proceeding
A novel NAND-type MONOS memory using 63nm process technology for multi-gigabit flash EEPROMs
Yoocheol Shin, Jungdal Choi, Changseok Kang, Changhyun Lee, Ki-Tae Park, Jang-Sik Lee, Jongsun Sel, Kim, V., Byeongin Choi, Jaesung Sim, Dongchan Kim, Hag-ju Cho, Kinam Kim
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)
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Conference Proceeding