Low Power and Improved Switching Properties of Selector-Less Ta2O5 Based Resistive Random Access Memory Using Ti-Rich TiN Electrode
Kim, Beomyong, Kim, Wangee, Kim, Hyojune, Jung, Kyooho, Park, Wooyoung, Seo, Bomin, Joo, Moonsig, Lee, Keejeung, Hong, Kwon, Park, Sungki
Published in Jpn J Appl Phys (25.04.2013)
Published in Jpn J Appl Phys (25.04.2013)
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Journal Article
A novel three-dimensional dual control-gate with surrounding floating-gate (DC-SF) NAND flash cell
Aritome, Seiichi, Whang, SungJin, Lee, KiHong, Shin, DaeGyu, Kim, BeomYong, Kim, MinSoo, Bin, JinHo, Han, JiHye, Kim, SungJun, Lee, BoMi, Jung, YoungKyun, Cho, SungYoon, Shin, ChangHee, Yoo, HyunSeung, Choi, SangMoo, Hong, Kwon, Park, SungKi, Hong, SungJoo
Published in Solid-state electronics (01.01.2013)
Published in Solid-state electronics (01.01.2013)
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Journal Article
Low Power and Improved Switching Properties of Selector-Less Ta sub(2)O sub(5) Based Resistive Random Access Memory Using Ti-Rich TiN Electrode
Kim, Beomyong, Kim, Wangee, Kim, Hyojune, Jung, Kyooho, Park, Wooyoung, Seo, Bomin, Joo, Moonsig, Lee, Keejeung, Hong, Kwon, Park, Sungki
Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
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Journal Article
Low Power and Improved Switching Properties of Selector-Less Ta 2 O 5 Based Resistive Random Access Memory Using Ti-Rich TiN Electrode
Kim, Beomyong, Kim, Wangee, Kim, Hyojune, Jung, Kyooho, Park, Wooyoung, Seo, Bomin, Joo, Moonsig, Lee, Keejeung, Hong, Kwon, Park, Sungki
Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
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Journal Article
The study of flat-band voltage shift using arsenic ion-implantation with High-k/Metal Inserted Poly Si gate stacks
BeomYong Kim, YunHyuck Ji, SeungMi Lee, BongSeok Jeon, KeeJeung Lee, Kwon Hong, SungKi Park
Published in 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) (01.09.2011)
Published in 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) (01.09.2011)
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Conference Proceeding
Novel 3-dimensional Dual Control-gate with Surrounding Floating-gate (DC-SF) NAND flash cell for 1Tb file storage application
SungJin Whang, KiHong Lee, DaeGyu Shin, BeomYong Kim, MinSoo Kim, JinHo Bin, JiHye Han, SungJun Kim, BoMi Lee, YoungKyun Jung, SungYoon Cho, ChangHee Shin, HyunSeung Yoo, SangMoo Choi, Kwon Hong, Aritome, Seiichi, SungKi Park, SungJoo Hong
Published in 2010 International Electron Devices Meeting (01.12.2010)
Published in 2010 International Electron Devices Meeting (01.12.2010)
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Conference Proceeding