Silicon carbide detectors of high-energy particles
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Published in Semiconductors (Woodbury, N.Y.) (01.06.2002)
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Photoelectric properties of p +-n junctions based on 4H-SiC ion-implanted with aluminum
Violina, G. N., Kalinina, E. V., Kholujanov, G. F., Onushkin, G. A., Kossov, V. G., Yafaev, R. R., Hallén, A., Konstantinov, A. O.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2002)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2002)
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Effect of ion doping on the electrical and luminescent properties of 4H-SiC epitaxial p-n junctions
Kalinina, E.V., Kholujanov, G.F., Zubrilov, A.S., Tsvetkov, D.V., Vatnik, M.P., Soloviev, V.A., Tretjakov, V.D., Kong, H., Dmitriev, V.A.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.04.1997)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.04.1997)
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