X-ray spectroscopic study of electronic structure of amorphous silicon and silicyne
Mashin, A. I., Khokhlov, A. F., Domashevskaya, É. P., Terekhov, V. A., Mashin, N. I.
Published in Semiconductors (Woodbury, N.Y.) (01.08.2001)
Published in Semiconductors (Woodbury, N.Y.) (01.08.2001)
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Synchrotron investigations of the specific features in the electron energy spectrum of silicon nanostructures
Domashevskaya, É. P., Terekhov, V. A., Kashkarov, V. M., Manukovskii, É. Yu, Turishchev, S. Yu, Molodtsov, S. L., Vyalykh, D. V., Khokhlov, A. F., Mashin, A. I., Shengurov, V. G., Svetlov, S. P., Chalkov, V. Yu
Published in Physics of the solid state (01.02.2004)
Published in Physics of the solid state (01.02.2004)
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Structural and photoluminescence properties of heteroepitaxial silicon-on-sapphire layers
Svetlov, S. P., Chalkov, V. Yu, Shengurov, V. G., Drozdov, Yu. N., Krasil’nik, Z. F., Krasil’nikova, L. V., Stepikhova, M. V., Pavlov, D. A., Pavlova, T. V., Shilyaev, P. A., Khokhlov, A. F.
Published in Physics of the solid state (01.01.2004)
Published in Physics of the solid state (01.01.2004)
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Absorption features in a-Si/ZrOx nanostructures
Khokhlov, A. F., Chuchmai, I. A., Ershov, A. V.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2000)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2000)
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Doping and impurity compensation by ion implantation in a-SiGe films
Ershov, A. V., Mashin, A. I., Khokhlov, A. F.
Published in Semiconductors (Woodbury, N.Y.) (01.10.1998)
Published in Semiconductors (Woodbury, N.Y.) (01.10.1998)
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Formation of x-ray images by the action of an optical image on a diffracting lithium niobate crystal
Trushin, V. N., Zholudev, A. A., Faddeev, M. A., Chuprunov, E. V., Khokhlov, A. F.
Published in Technical physics (01.09.1997)
Published in Technical physics (01.09.1997)
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Vladimir Vasil'evich Zheleznyakov (on his seventieth birthday)
Alfimov, Mikhail V, Andreev, Aleksandr F, Boyarchuk, A A, Gaponov-Grekhov, Andrei V, Ginzburg, Vitalii L, Zaitsev, Valerii V, Litvak, Aleksandr G, Syunyaev, Rashid A, Talanov, Vladimir I, Trakhtengerts, V Yu, Khanin, Ya I, Khokhlov, A F
Published in Physics Uspekhi (28.02.2001)
Published in Physics Uspekhi (28.02.2001)
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Erratum: Structure and electrical conductivity of polycrystalline silicon films grown by molecular-beam deposition accompanied by low-energy ion bombardment of the growth surface [Semiconductors 31, 237–240 (March 1997)]
Pavlov, D. A., Khokhlov, A. F., Shungurov, D. V., Shengurov, V. G.
Published in Semiconductors (Woodbury, N.Y.) (01.10.1997)
Published in Semiconductors (Woodbury, N.Y.) (01.10.1997)
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Structure and electrical conductivity of polycrystalline silicon films grown by molecularbeam deposition accompanied by low-energy ion bombardment of the growth surface
Pavlov, D. A., Khokhlov, A. F., Shungurov, D. V., Shengurov, V. G.
Published in Semiconductors (Woodbury, N.Y.) (01.03.1997)
Published in Semiconductors (Woodbury, N.Y.) (01.03.1997)
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Germanium implantation into amorphous silicon films
Ershov, Alexey V., Ezhevskii, Alexander A., Khokhlov, Alexander F., Khokhlov, Dmitri A., Mashin, Alexander I., Mashin, Nikolay I.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.12.1995)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.12.1995)
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Devices for the interstitial radiotherapy of cancer of mouth mucosa
Medvedev, V S, Khokhlov, A F, Melin, V S, Livshits, L I
Published in Meditsinskaia radiologiia (01.09.1986)
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Published in Meditsinskaia radiologiia (01.09.1986)
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