Fabrication of 5-20 nm thick β -W films
Narasimham, Avyaya J., Medikonda, Manasa, Matsubayashi, Akitomo, Khare, Prasanna, Chong, Hyuncher, Matyi, Richard J., Diebold, Alain, LaBella, Vincent P.
Published in AIP advances (01.11.2014)
Published in AIP advances (01.11.2014)
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Journal Article
Pulsed-N2 assisted growth of 5-20 nm thick β -W films
Narasimham, Avyaya J., Green, Avery, Matyi, Richard J., Khare, Prasanna, Vo, Tuan, Diebold, Alain, LaBella, Vincent P.
Published in AIP advances (01.11.2015)
Published in AIP advances (01.11.2015)
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Journal Article
Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20 nm n-type field effect transistor devices
LOUBET, Nicolas, ADAM, Thomas, DORIS, Bruce, SAMPSON, Ron, RAYMOND, Mark, QING LIU, KANGGUO CHENG, SREENIVASAN, Raghavasimhan, REZNICEK, Alexander, KHARE, Prasanna, KLEEMEIER, Walter, PARUCHURI, Vamsi
Published in Thin solid films (01.02.2012)
Published in Thin solid films (01.02.2012)
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Conference Proceeding
Pulsed-N{sub 2} assisted growth of 5-20 nm thick β-W films
Narasimham, Avyaya J., Green, Avery, Matyi, Richard J., Khare, Prasanna, Vo, Tuan, Diebold, Alain, LaBella, Vincent P.
Published in AIP advances (15.11.2015)
Published in AIP advances (15.11.2015)
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Journal Article
Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20nm n-type field effect transistor devices
Loubet, Nicolas, Adam, Thomas, Raymond, Mark, Liu, Qing, Cheng, Kangguo, Sreenivasan, Raghavasimhan, Reznicek, Alexander, Khare, Prasanna, Kleemeier, Walter, Paruchuri, Vamsi, Doris, Bruce, Sampson, Ron
Published in Thin solid films (01.02.2012)
Published in Thin solid films (01.02.2012)
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Journal Article
Optimization of SiC:P Raised Source Drain Epitaxy for Planar 20nm Fully Depleted SOI MOSFET Structures
Loubet, Nicolas, Nagumo, Toshiharu, Adam, Thomas, Liu, Qing, Raymond, Mark, Cheng, Kangguo, Khakifirooz, Ali, Zhu, Zhengmao, Khare, Prasanna, Paruchuri, Vamsi K., Doris, Bruce, Sampson, Ron
Published in ECS transactions (15.03.2013)
Published in ECS transactions (15.03.2013)
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Journal Article