Complementary model for intrinsic time-dependent dielectric breakdown in SiO2 dielectrics
McPherson, J. W., Khamankar, R. B., Shanware, A.
Published in Journal of applied physics (01.11.2000)
Published in Journal of applied physics (01.11.2000)
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Journal Article
Gate length dependent polysilicon depletion effects
Chang-Hoon Choi, Chidambaram, P.R., Khamankar, R., Machala, C.F., Zhiping Yu, Dutton, R.W.
Published in IEEE electron device letters (01.04.2002)
Published in IEEE electron device letters (01.04.2002)
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Journal Article
Dopant profile and gate geometric effects on polysilicon gate depletion in scaled MOS
Chang-Hoon Choi, Chidambaram, P.R., Khamankar, R., Machala, C.F., Zhiping Yu, Dutton, R.W.
Published in IEEE transactions on electron devices (01.07.2002)
Published in IEEE transactions on electron devices (01.07.2002)
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Journal Article
Evaluation of the positive biased temperature stress stability in HfSiON gate dielectrics
Shanware, A., Visokay, M.R., Chambers, J.J., Rotondaro, A.L.P., Bu, H., Bevan, M.J., Khamankar, R., Aur, S., Nicollian, P.E., McPherson, J., Colombo, L.
Published in 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual (2003)
Published in 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual (2003)
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Conference Proceeding
An enhanced 90nm high performance technology with strong performance improvements from stress and mobility increase through simple process changes
Khamankar, R., Bu, H., Bowen, C., Chakravarthi, S., Chidambaram, P.R., Bevan, M., Krishnan, A., Niimi, H., Smith, B., Blatchford, J., Hornung, B., Lu, J.P., Nicollian, P., Kirkpatrick, B., Miles, D., Hewson, M., Farber, D., Hall, L., Alshareef, H., Varghese, A., Gurba, A., Ukraintsev, V., Rathsack, B., DeLoach, J., Tran, J., Kaneshige, C., Somervell, M., Aur, S., Machala, C., Grider, T.
Published in Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004 (2004)
Published in Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004 (2004)
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Conference Proceeding
Effects of electrical stress parameters on polarization loss in ferroelectric P(L)ZT thin film capacitors
Khamankar, R.B., Jiyoung Kim, Sudhama, C., Bo Jiang, Lee, J.C.
Published in IEEE electron device letters (01.04.1995)
Published in IEEE electron device letters (01.04.1995)
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Journal Article
A complementary molecular-model (including field and current) for TDDB in SiO2 dielectrics
McPherson, J.W., Khamankar, R.B., Shanware, A.
Published in Microelectronics and reliability (01.08.2000)
Published in Microelectronics and reliability (01.08.2000)
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Journal Article
Thickness-scaling of sputtered PZT films in the 200 nm range for memory applications
SUDHAMA, C, KIM, J, KHAMANKAR, R, CHIKARMANE, V, LEE, J. C
Published in Journal of electronic materials (01.12.1994)
Published in Journal of electronic materials (01.12.1994)
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Journal Article
Effects of nonlinear storage capacitor on DRAM READ/WRITE
Bo Jiang, Sudhama, C., Khamankar, R., Jiyoung Kim, Lee, J.C.
Published in IEEE electron device letters (01.04.1994)
Published in IEEE electron device letters (01.04.1994)
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Journal Article
Advanced CMOS transistors with a novel HfSiON gate dielectric
Rotondaro, A.L.P., Visokay, M.R., Chambers, J.J., Shanware, A., Khamankar, R., Bu, H., Laaksonen, R.T., Tsung, L., Douglas, M., Kuan, R., Bevan, M.J., Grider, T., McPherson, J., Colombo, L.
Published in 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) (2002)
Published in 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) (2002)
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Conference Proceeding
Novel methods for the reliability testing of ferroelectric DRAM storage capacitors
Sudhama, C., Khamankaar, R., Kim, J., Jiang, B., Lee, J.C., Maniar, P.D., Jones, R.E., Mogab, C.J.
Published in Proceedings of 1994 IEEE International Reliability Physics Symposium (1994)
Published in Proceedings of 1994 IEEE International Reliability Physics Symposium (1994)
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Conference Proceeding
Material dependence of hydrogen diffusion: implications for NBTI degradation
Krishnan, A.T., Chancellor, C., Chakravarthi, S., Nicollian, P.E., Reddy, V., Varghese, A., Khamankar, R.B., Krishnan, S.
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)
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Conference Proceeding
A designer friendly 45nm high performance technology with in-situ C-doped e-SiGe & dual stress liner in SRAM
Khamankar, R., Bowen, C., Bu, H., Corum, D., Fujii, I., Gu, Y., Hornung, B., Kim, T., Kirkpatrick, B., Kirmse, K., Krishnan, A., Lin, C., Liu, L., Lowry, T., Montgomery, C., Olubuyide, O., Prins, S., Riley, D., Yu, S., Blatchford, J., Machala, C., O'Brien, C., Shinn, G., Grider, T.
Published in 2008 Symposium on VLSI Technology (01.06.2008)
Published in 2008 Symposium on VLSI Technology (01.06.2008)
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Conference Proceeding
A novel BST storage capacitor node technology using platinum electrodes for Gbit DRAMs
Khamankar, R.B., Kressley, M.A., Visokay, M.R., Moise, T., Xing, G., Nemoto, S., Okumo, Y., Fang, S.J., Wilson, A.M., Gaynor, J.F., Hurd, T.Q., Crenshaw, D.L., Summerfelt, S., Colombo, L.
Published in International Electron Devices Meeting. IEDM Technical Digest (1997)
Published in International Electron Devices Meeting. IEDM Technical Digest (1997)
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Conference Proceeding
Measurement of mobile ion contamination in multilayer metallization by triangular voltage sweep
Chonko, M A, Khamankar, R, Tiwald, T, Allen, T, Vasquez, B
Published in Journal of the Electrochemical Society (01.07.1994)
Published in Journal of the Electrochemical Society (01.07.1994)
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Journal Article
SRAM Cell Static Noise Margin and VMIN Sensitivity to Transistor Degradation
Krishnan, A.T., Reddy, V., Aldrich, D., Raval, J., Christensen, K., Rosal, J., O'Brien, C., Khamankar, R., Marshall, A., Loh, W.-K., McKee, R., Krishnan, S.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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Conference Proceeding