Liquid Phase Epitaxy (LPE) Formation of Localized High Quality and Mobility Ge & SiGe by High Dose Ge-Implantation with Laser Melt Annealing for 10nm and 7nm Node CMOS Technology
Borland, John O, Sugitani, Michiro, Oesterlin, Peter, Johnson, Walt, Buyuklimanli, Temel, Hengstebeck, Robert, Kennon, Ethan, Jones, Kevin Scott, Joshi, Abhijeet
Published in ECS transactions (12.08.2014)
Published in ECS transactions (12.08.2014)
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Journal Article
Liquid Phase Epitaxy (LPE) Formation of Localized High Quality and Mobility Ge & SiGe by High Dose Ge-Implantation with Laser Melt Annealing for 10nm and 7nm Node CMOS Technology
Borland, John O, Sugitani, Michiro, Oesterlin, Peter, Johnson, Walt, Buyuklimanli, Temel, Hengstebeck, Robert, Kennon, Ethan, Jones, Kevin Scott, Joshi, Abhijeet
Published in Meeting abstracts (Electrochemical Society) (05.08.2014)
Published in Meeting abstracts (Electrochemical Society) (05.08.2014)
Get full text
Journal Article