High-brightness polarized light-emitting diodes
Matioli, Elison, Brinkley, Stuart, Kelchner, Kathryn M, Hu, Yan-Ling, Nakamura, Shuji, DenBaars, Steven, Speck, James, Weisbuch, Claude
Published in Light, science & applications (01.08.2012)
Published in Light, science & applications (01.08.2012)
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Journal Article
Direct Measurement of Nanoscale Lateral Carrier Diffusion: Toward Scanning Diffusion Microscopy
Mensi, Mounir, Ivanov, Ruslan, Uždavinys, Tomas K, Kelchner, Kathryn M, Nakamura, Shuji, DenBaars, Steven P, Speck, James S, Marcinkevičius, Saulius
Published in ACS photonics (21.02.2018)
Published in ACS photonics (21.02.2018)
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Journal Article
Optical properties and carrier dynamics in m -plane InGaN quantum wells
Marcinkevičius, Saulius, Kelchner, Kathryn M., Nakamura, Shuji, DenBaars, Steven P., Speck, James S.
Published in Physica status solidi. C (01.02.2014)
Published in Physica status solidi. C (01.02.2014)
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Journal Article
Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes
Kelchner, Kathryn M, Farrell, Robert M, Lin, You-Da, Hsu, Po Shan, Hardy, Matthew T, Wu, Feng, Cohen, Daniel A, Ohta, Hiroaki, Speck, James S, Nakamura, Shuji, DenBaars, Steven P
Published in Applied physics express (01.09.2010)
Published in Applied physics express (01.09.2010)
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Journal Article
InGaN/GaN Blue Laser Diode Grown on Semipolar $(30\bar{3}1)$ Free-Standing GaN Substrates
Hsu, Po Shan, Kelchner, Kathryn M, Tyagi, Anurag, Farrell, Robert M, Haeger, Daniel A, Fujito, Kenji, Ohta, Hiroaki, DenBaars, Steven P, Speck, James S, Nakamura, Shuji
Published in Applied physics express (01.05.2010)
Published in Applied physics express (01.05.2010)
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Journal Article
Low damage dry etch for III-nitride light emitters
Nedy, Joseph G, Young, Nathan G, Kelchner, Kathryn M, Hu, Yanling, Farrell, Robert M, Nakamura, Shuji, DenBaars, Steven P, Weisbuch, Claude, Speck, James S
Published in Semiconductor science and technology (01.08.2015)
Published in Semiconductor science and technology (01.08.2015)
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Journal Article
AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm
Tyagi, Anurag, Farrell, Robert M, Kelchner, Kathryn M, Huang, Chia-Yen, Hsu, Po Shan, Haeger, Daniel A, Hardy, Matthew T, Holder, Casey, Fujito, Kenji, Cohen, Daniel A, Ohta, Hiroaki, Speck, James S, DenBaars, Steven P, Nakamura, Shuji
Published in Applied physics express (01.01.2010)
Published in Applied physics express (01.01.2010)
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Journal Article
m -Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching
Hardy, Matthew T., Kelchner, Kathryn M., Lin, You-Da, Hsu, Po Shan, Fujito, Kenji, Ohta, Hiroaki, Speck, James S., Nakamura, Shuji, DenBaars, Steven P.
Published in Applied physics express (01.12.2009)
Published in Applied physics express (01.12.2009)
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Journal Article
Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes
Farrell, Robert M., Feezell, Daniel F., Schmidt, Mathew C., Haeger, Daniel A., Kelchner, Kathryn M., Iso, Kenji, Yamada, Hisashi, Saito, Makoto, Fujito, Kenji, Cohen, Daniel A., Speck, James S., DenBaars, Steven P., Nakamura, Shuji
Published in Japanese Journal of Applied Physics (01.08.2007)
Published in Japanese Journal of Applied Physics (01.08.2007)
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Journal Article
Aperture-Based Scanning Near-Field Optical Microscopy of Metallic Projection Patterns
Peraca, Nicolas Marquez, Banerjee, Saswatee, Roberts, John, Kelchner, Kathryn M., Franke, Alexander
Published in 2023 International Applied Computational Electromagnetics Society Symposium (ACES) (26.03.2023)
Published in 2023 International Applied Computational Electromagnetics Society Symposium (ACES) (26.03.2023)
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Conference Proceeding
AlGaN-Cladding-Free $m$-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers
Farrell, Robert M, Haeger, Daniel A, Hsu, Po Shan, Hardy, Matthew T, Kelchner, Kathryn M, Fujito, Kenji, Feezell, Daniel F, Mishra, Umesh K, DenBaars, Steven P, Speck, James S, Nakamura, Shuji
Published in Applied physics express (01.09.2011)
Published in Applied physics express (01.09.2011)
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Journal Article
Blue InGaN/GaN laser diodes grown on (33$ bar 3 bar 1 $) free-standing GaN substrates
Hsu, Po Shan, Sonoda, Junichi, Kelchner, Kathryn M., Tyagi, Anurag, Farrell, Robert M., Haeger, Daniel A., Young, Erin C., Romanov, Alexey E., Fujito, Kenji, Ohta, Hiroaki, DenBaars, Steven P., Speck, James S., Nakamura, Shuji
Published in Physica status solidi. C (01.07.2011)
Published in Physica status solidi. C (01.07.2011)
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Journal Article
20-21 - Semipolar 20-21 III-nitride laser diodes with etched mirrors
HAEGER DANIEL A, TYAGI ANURAG, HSU PO SHAN, KELCHNER KATHRYN M, OHTA HIROAKI, FARRELL ROBERT M, HUANG CHIA YEN, DENBAARS STEVEN P, NAKAMURA SHUJI, SPECK JAMES S
Year of Publication 06.11.2019
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Year of Publication 06.11.2019
Patent
PLASMA ENHANCED ATOMIC LAYER DEPOSITION WITH PULSED PLASMA EXPOSURE
JANJAM SATHISH BABU S.V, HENRI JON, SIMS JAMES S, TANG SHANE, KELCHNER KATHRYN M
Year of Publication 08.07.2015
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Year of Publication 08.07.2015
Patent
20-21 - Semipolar 20-21 III-nitride laser diodes with etched mirrors
HAEGER DANIEL A, TYAGI ANURAG, HSU PO SHAN, KELCHNER KATHRYN M, OHTA HIROAKI, FARRELL ROBERT M, HUANG CHIA YEN, DENBAARS STEVEN P, NAKAMURA SHUJI, SPECK JAMES S
Year of Publication 06.03.2018
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Year of Publication 06.03.2018
Patent
Atomic Layer Deposition of SiC x N y Using Si 2 Cl 6 and CH 3 NH 2 Plasma
Ovanesyan, Rafaiel A., Leick, Noemi, Kelchner, Kathryn M., Hausmann, Dennis M., Agarwal, Sumit
Published in Chemistry of materials (08.08.2017)
Published in Chemistry of materials (08.08.2017)
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Journal Article